2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)最新文献

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Combined method for detection of atrial late potentials 心房晚电位的联合检测方法
N. Matveyeva, N. Ivanushkina, K. Ivanko
{"title":"Combined method for detection of atrial late potentials","authors":"N. Matveyeva, N. Ivanushkina, K. Ivanko","doi":"10.1109/ELNANO.2013.6552080","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552080","url":null,"abstract":"The work is devoted to improvement of methods for noninvasive identification of low-amplitude components of electrocardiogram (ECG) - atrial late potentials (ALP) which are markers of potentially dangerous heart rhythm disorders. A combined method for ALP detection based on wavelet analysis, decomposition in the basis of eigenvectors and classification by neural network is proposed. As the result of the numerical experiment the dimension of ALP feature vector was minimized that made it possible to distinguish between 2 classes \"norm - no ALP\" and \"pathology - ALP are present\" with minimum error classification.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130719105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Excitation processes modeling in two-layer graphene 在两层石墨烯中激发过程建模
E. Aznakayev, D. Aznakayeva
{"title":"Excitation processes modeling in two-layer graphene","authors":"E. Aznakayev, D. Aznakayeva","doi":"10.1109/ELNANO.2013.6552098","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552098","url":null,"abstract":"Absorption vibronic spectra are investigated for molecular crystals with two molecules in an elementary cell that corresponds to two-layer graphene. The absorption vibronic spectra, their intensities, frequencies and polarizations are calculated for molecular crystals containing two molecules in an elementary cell or two-layer graphene.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116968558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On the spirometry and spirometers standardization 关于肺活量测定和肺活量计的标准化
V. Lopata, Sinekop Yu, M. ElShabbah, I. Myasnyi
{"title":"On the spirometry and spirometers standardization","authors":"V. Lopata, Sinekop Yu, M. ElShabbah, I. Myasnyi","doi":"10.1109/ELNANO.2013.6552028","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552028","url":null,"abstract":"The problem of spirometry standardization is considered. We analyzed the standard of ATS/ERS (2005) and proposed the prospective requirements for spirometers of three levels. The possibility of flow sensors to meet these requirements is considered.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121907244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of technology of multicomponent instrument compositions formation on the basis of porous silicon 基于多孔硅的多组分仪器组成技术的发展
Zubko Evgeniya Ivanovna, Shvets Evgenii Yakovlevich
{"title":"Development of technology of multicomponent instrument compositions formation on the basis of porous silicon","authors":"Zubko Evgeniya Ivanovna, Shvets Evgenii Yakovlevich","doi":"10.1109/ELNANO.2013.6552036","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552036","url":null,"abstract":"Technological scheme for a formation of electron instrument compositions PcCu /por-Si/n-Si and PcAl/por-Si/n-Si has been developed. The data on the technological adaptation of the deposition and annealing of samples have been given. The effect of annealing for morphological and electrical characteristics of the obtained compositions has been investigated.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129843430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of LC voltage-controlled oscillators in 90-nm CMOS technology for 3G transceivers 3G收发器用90nm CMOS技术的LC压控振荡器优化
V. Ulansky, H. Elsherif
{"title":"Optimization of LC voltage-controlled oscillators in 90-nm CMOS technology for 3G transceivers","authors":"V. Ulansky, H. Elsherif","doi":"10.1109/ELNANO.2013.6552040","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552040","url":null,"abstract":"This paper describes the design and optimization of LC voltage-controlled oscillators (VCOs) for 3G transceivers in 90-nm, 1.0-V CMOS technology. The proposed technique is illustrated by optimizing eight different MOS LC VCOs in the uplink band of 2500 to 2570 MHz. The best optimized VCO exhibits a maximum in-band phase noise of -90 dBc/Hz and -145 dBc/Hz, respectively, at 10 kHz and 10 MHz offset from carrier, 0.16 mW power consumption, and suppression of the second and third harmonics better than -40 dBc in the tuning range.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128565790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Three-level approach to graphene metamaterials: Electron density waves and linear and nonlinear electrodynamics 石墨烯超材料的三能级方法:电子密度波和线性和非线性电动力学
Y. Rapoport, N. Kalinich, V. Grimalsky, I. Nefedov, V. Malnev
{"title":"Three-level approach to graphene metamaterials: Electron density waves and linear and nonlinear electrodynamics","authors":"Y. Rapoport, N. Kalinich, V. Grimalsky, I. Nefedov, V. Malnev","doi":"10.1109/ELNANO.2013.6552041","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552041","url":null,"abstract":"We propose “three-level” approach to graphene metamaterials including “metamaterial treatment” of electron density waves in graphene. First, we determined the characteristics of electron wave transport in graphene layer, accounting for applied external electric and magnetic fields, exchange and spin-orbit interactions. The new system of equations for 2D electron beam in graphene layer with a 2D inhomogeneity is derived and the special method for a solution of such a system is developed. W search a possibility of “capturing” by the “magnetic ring resonator” of an electron beam. Then we propose the paradigm of “solid state graphene electron optics”. This approach includes different ways of control over characteristics of a propagation of electron density waves, passive components, typical for electron optics and nanoelectronics, such as waveguides, lenses, diffraction gratings. Finally, the new equations are derived, to model linear (with great slowdown) and nonlinear (with electronic nonlinearity) electromagnetic waves in graphene layered lossy structures.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124230228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Investigation of self-shifted solitons as part of femtosecond supercontinuum 飞秒超连续体中自移孤子的研究
Y. Bashkatov, O. Kutsenko, B. Tsyganok, V. Khomenko
{"title":"Investigation of self-shifted solitons as part of femtosecond supercontinuum","authors":"Y. Bashkatov, O. Kutsenko, B. Tsyganok, V. Khomenko","doi":"10.1109/ELNANO.2013.6552065","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552065","url":null,"abstract":"This article is devoted to description of red shifted solitons appearing during supercontinuum generation in photonic crystal fibers by femtosecond pump. Numerical method for modeling supercontinuum generation is presented and it is shown that experimental results have agreement with theory. Simple relations for description of soliton behavior and Raman influence included.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123195996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Distributed feedback analysis 分布式反馈分析
O. Vityaz
{"title":"Distributed feedback analysis","authors":"O. Vityaz","doi":"10.1109/ELNANO.2013.6552094","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552094","url":null,"abstract":"A new technique for circuit feedback analysis is presented. A formula for the return ratio is derived using a strict definition of feedback. The technique may be applied in both laboratory-based and computer-aided analysis of feedback in electronic circuits and other dynamic systems. Presented simulation results demonstrate the effectiveness of the developed technique.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116173581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Geometrical measuring at 3D stereoscopic radiography 三维立体放射照相的几何测量
S. Miroshnychenko, A. Nevhasymyy, E. Volkov
{"title":"Geometrical measuring at 3D stereoscopic radiography","authors":"S. Miroshnychenko, A. Nevhasymyy, E. Volkov","doi":"10.1109/ELNANO.2013.6552082","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552082","url":null,"abstract":"Stereoscopy is one of the ways for creating 3D images in radiography. Such technique can be realized on widespread X-ray equipment. Geometrical object measurement on stereo images is realized with the help of synthesized stereo cursor, which is displayed superimposed with X-ray stereo image.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124446345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The method of determining the duration of transients in semiconductor devices for current-voltage characteristics measurement 测定电流-电压特性测量用半导体器件瞬变持续时间的方法
Ievgen O. Iermolenko, Oleksandr F. Bondarenko, K. Iermolenko
{"title":"The method of determining the duration of transients in semiconductor devices for current-voltage characteristics measurement","authors":"Ievgen O. Iermolenko, Oleksandr F. Bondarenko, K. Iermolenko","doi":"10.1109/ELNANO.2013.6552062","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552062","url":null,"abstract":"The improved method of automatic determining the duration of oscillating transients in semiconductor devices for correct current-voltage characteristics measurement is proposed. This method allows increasing the accuracy of current-voltage characteristics measurement. It is applied in measuring device for current-voltage characteristics analysis.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132338949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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