3G收发器用90nm CMOS技术的LC压控振荡器优化

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI:10.1109/ELNANO.2013.6552040

V. Ulansky, H. Elsherif

{"title":"3G收发器用90nm CMOS技术的LC压控振荡器优化","authors":"V. Ulansky, H. Elsherif","doi":"10.1109/ELNANO.2013.6552040","DOIUrl":null,"url":null,"abstract":"This paper describes the design and optimization of LC voltage-controlled oscillators (VCOs) for 3G transceivers in 90-nm, 1.0-V CMOS technology. The proposed technique is illustrated by optimizing eight different MOS LC VCOs in the uplink band of 2500 to 2570 MHz. The best optimized VCO exhibits a maximum in-band phase noise of -90 dBc/Hz and -145 dBc/Hz, respectively, at 10 kHz and 10 MHz offset from carrier, 0.16 mW power consumption, and suppression of the second and third harmonics better than -40 dBc in the tuning range.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimization of LC voltage-controlled oscillators in 90-nm CMOS technology for 3G transceivers\",\"authors\":\"V. Ulansky, H. Elsherif\",\"doi\":\"10.1109/ELNANO.2013.6552040\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and optimization of LC voltage-controlled oscillators (VCOs) for 3G transceivers in 90-nm, 1.0-V CMOS technology. The proposed technique is illustrated by optimizing eight different MOS LC VCOs in the uplink band of 2500 to 2570 MHz. The best optimized VCO exhibits a maximum in-band phase noise of -90 dBc/Hz and -145 dBc/Hz, respectively, at 10 kHz and 10 MHz offset from carrier, 0.16 mW power consumption, and suppression of the second and third harmonics better than -40 dBc in the tuning range.\",\"PeriodicalId\":443634,\"journal\":{\"name\":\"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELNANO.2013.6552040\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELNANO.2013.6552040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了3G收发器用90纳米、1.0 v CMOS技术的LC压控振荡器(vco)的设计与优化。通过对上行频段2500 ~ 2570 MHz的8个不同MOS LC压控振荡器进行优化，说明了该技术的可行性。优化后的VCO在载波偏移10 kHz和10 MHz时的最大带内相位噪声分别为-90 dBc/Hz和-145 dBc/Hz，功耗为0.16 mW，在调谐范围内对二次和三次谐波的抑制优于-40 dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimization of LC voltage-controlled oscillators in 90-nm CMOS technology for 3G transceivers

This paper describes the design and optimization of LC voltage-controlled oscillators (VCOs) for 3G transceivers in 90-nm, 1.0-V CMOS technology. The proposed technique is illustrated by optimizing eight different MOS LC VCOs in the uplink band of 2500 to 2570 MHz. The best optimized VCO exhibits a maximum in-band phase noise of -90 dBc/Hz and -145 dBc/Hz, respectively, at 10 kHz and 10 MHz offset from carrier, 0.16 mW power consumption, and suppression of the second and third harmonics better than -40 dBc in the tuning range.

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2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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