基于多孔硅的多组分仪器组成技术的发展

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI:10.1109/ELNANO.2013.6552036

Zubko Evgeniya Ivanovna, Shvets Evgenii Yakovlevich

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引用次数: 0

摘要

提出了pcc /por-Si/n-Si和PcAl/por-Si/n-Si电子仪器组成的工艺方案。给出了样品沉积和退火的工艺适应性数据。研究了退火对所得组合物形貌和电学特性的影响。

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Development of technology of multicomponent instrument compositions formation on the basis of porous silicon

Technological scheme for a formation of electron instrument compositions PcCu /por-Si/n-Si and PcAl/por-Si/n-Si has been developed. The data on the technological adaptation of the deposition and annealing of samples have been given. The effect of annealing for morphological and electrical characteristics of the obtained compositions has been investigated.

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2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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