Development of technology of multicomponent instrument compositions formation on the basis of porous silicon

Abstract

Technological scheme for a formation of electron instrument compositions PcCu /por-Si/n-Si and PcAl/por-Si/n-Si has been developed. The data on the technological adaptation of the deposition and annealing of samples have been given. The effect of annealing for morphological and electrical characteristics of the obtained compositions has been investigated.