均匀梯度发射极谐振隧道二极管的建模

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI:10.1109/ELNANO.2013.6552012

A. Fediai, V. Moskaliuk

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引用次数: 3

摘要

进一步发展了谐振隧道二极管(RTD)模型的包络函数方法。我们发现了一种同时处理量子阱散射和非相干输运的方法，得到了与梯度均匀发射体rtd的实验I-V特性较好的一致性。我们还包括所有我们以前开发的改进模型，以获得最大的充分性。由于I-V特征的形状受到众多因素的影响，我们在完成验证的基础上描述我们对每个因素的重要性的愿景。

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Modeling of resonant-tunneling diode with uniform and graded emitter

Envelope function approach for resonant-tunneling diode (RTD) modeling is developed further. We have found a way of simultaneous treatment of scattering in the quantum well (QW) and incoherent transport, yielding better agreement with experimental I-V characteristics of RTDs with graded and uniform emitter. We also included all our previously developed improvements to the model to obtain maximum adequacy. Since I-V characteristic's shape is affected by numerous factors, we describe our vision on significance of each of them, based on the fulfilled verification.

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2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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