功率亚微米异质结场效应晶体管的热阻

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI:10.1109/ELNANO.2013.6552007

V. Timofeyev, E. Semenovskaya

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引用次数: 3

摘要

提出了功率亚微米异质结场效应晶体管的热阻计算方法。所描述的方法建立了晶体管的热阻与其热学和电物理参数、几何尺寸和形状的依赖关系。通过实验验证了亚微米晶体管的热阻计算结果，结果吻合较好。

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Thermal resistance of power submicron heterojunction field-effect transistors

The paper presents a method for thermal resistance calculating of power submicron heterojunction field-effect transistor. Described method establishes dependence of the thermal resistance of the transistor on its thermo- and electrophysical parameters, geometrical size and shape. The results of thermal resistance calculation for submicron transistors are proved by experiment and show good agreement.

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2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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