Modeling of resonant-tunneling diode with uniform and graded emitter

Abstract

Envelope function approach for resonant-tunneling diode (RTD) modeling is developed further. We have found a way of simultaneous treatment of scattering in the quantum well (QW) and incoherent transport, yielding better agreement with experimental I-V characteristics of RTDs with graded and uniform emitter. We also included all our previously developed improvements to the model to obtain maximum adequacy. Since I-V characteristic's shape is affected by numerous factors, we describe our vision on significance of each of them, based on the fulfilled verification.