电子辐射对晶体管影响的建模

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI:10.1109/ELNANO.2013.6552069

A. A. Tuyakbayev, M. Baizhumanov, D. A. Tuyakbaev

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引用次数: 0

摘要

本文提出了n-p-n晶体管基极、n-p-n晶体管DLTS光谱基极中少数载流子寿命辐射变化常数的单能级模型，并对结果进行了描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of electronic radiation influence to transistors

The paper presents a single-level model to identify the constant of the radiation changes in the lifetime of minority carriers in the base of n-p-n transistors, DLTS spectra base of n-p-n transistors and describes the results.

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来源期刊

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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