Timing yield and reliability improvement of carbon nano-tube FET based digital circuits with statistical driven correlation-aware placement

A. Jalali, H. Pedram
{"title":"Timing yield and reliability improvement of carbon nano-tube FET based digital circuits with statistical driven correlation-aware placement","authors":"A. Jalali, H. Pedram","doi":"10.1109/ELNANO.2013.6552009","DOIUrl":null,"url":null,"abstract":"Carbon Nano-tube Field Effect Transistor (CNFET) is one of the most promising successors of CMOS technology because of its superb electrical features. Although these features are proper for implementing in various practical circuits, CNFET-based circuits will encounter enormous fabrication problems due to their size. Two of the most challenging problems are timing yield and reliability reduction. Consequently methods for improving robustness of CNFET-based circuits should be conducted. Considering these problems, in this paper, the statistical model of reliability and timing yield of CNFET-based circuits is presented and then we propose a statistical driven correlation-aware placement for CNFET-based gates. We illustrate that our placement engine improves the reliability and timing yield of various circuits. Following these observations, in our method, a statistical approach is conducted to get optimum timing yield of register-to-register path in a sequential circuit. Subsequently, experimental results show improvement of about 19% in timing yield and 17% in reliability of some ISCAS89 circuits.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"311 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELNANO.2013.6552009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Carbon Nano-tube Field Effect Transistor (CNFET) is one of the most promising successors of CMOS technology because of its superb electrical features. Although these features are proper for implementing in various practical circuits, CNFET-based circuits will encounter enormous fabrication problems due to their size. Two of the most challenging problems are timing yield and reliability reduction. Consequently methods for improving robustness of CNFET-based circuits should be conducted. Considering these problems, in this paper, the statistical model of reliability and timing yield of CNFET-based circuits is presented and then we propose a statistical driven correlation-aware placement for CNFET-based gates. We illustrate that our placement engine improves the reliability and timing yield of various circuits. Following these observations, in our method, a statistical approach is conducted to get optimum timing yield of register-to-register path in a sequential circuit. Subsequently, experimental results show improvement of about 19% in timing yield and 17% in reliability of some ISCAS89 circuits.
基于统计驱动相关感知布局的碳纳米管场效应管数字电路的时序良率和可靠性提高
碳纳米管场效应晶体管(CNFET)因其优异的电学特性而成为CMOS技术最有前途的接班人之一。虽然这些特性适合在各种实际电路中实现,但基于cnfet的电路由于其尺寸将遇到巨大的制造问题。最具挑战性的两个问题是定时良率和可靠性降低。因此,提高cnfet电路鲁棒性的方法应该被研究。针对这些问题,本文提出了基于cnfet电路的可靠性和时序良率的统计模型,并提出了基于cnfet的栅极的统计驱动相关感知布局。我们举例说明,我们的放置引擎提高了各种电路的可靠性和时序良率。根据这些观察结果,在我们的方法中,采用统计方法来获得顺序电路中寄存器到寄存器路径的最佳时序产率。实验结果表明,部分ISCAS89电路的时序收率提高了19%左右,可靠性提高了17%左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信