1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers最新文献

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Architecture for DSP VLSI DSP VLSI体系结构
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1156931
S. Magar
{"title":"Architecture for DSP VLSI","authors":"S. Magar","doi":"10.1109/ISSCC.1986.1156931","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1156931","url":null,"abstract":"AS CMOS technology scales to 1μm, it is becoming possible to integrate more than 500K transistors on a processor-like chip. At this point, various digital signal processing (DSP) chip architecture approaches need to be re-examined to enable VLSI designers to obtain on optimal solution for system designers in terms of performance, power, cost, flexibility and development time. The panel will explore and debate several DSP architectural options available to VLSI designers, such as single-processor, systolic arrays, parallel processors, customs, etc.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131651299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 13GHz GaAs dynamic frequency divider and prescaler IC 一种13GHz GaAs动态分频器和预分频器集成电路
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1156887
T. Sugeta, K. Osafune, K. Ohwada
{"title":"A 13GHz GaAs dynamic frequency divider and prescaler IC","authors":"T. Sugeta, K. Osafune, K. Ohwada","doi":"10.1109/ISSCC.1986.1156887","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1156887","url":null,"abstract":"GaAs ICs HAVE a great potential, particularly in satellite and microwave communication systems due to their ultrahigh speed, low power consumption and radiation hardness. In a local oscillator circuit, a prescaler operating at a higher frequency with a lower power is required to simplify the phase lock loop and to improve phase and frequency stability. This paper will describe a 13.2GHz GaAo binary dynamic divider with 115mW power dissipation and an 8.5GHz GaAs 1/32 prescaler IC with 540mW power dissipation.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131865561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A realtime image processing chip set 一种实时图像处理芯片组
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1157001
P. Ruetz, R. Brodersen
{"title":"A realtime image processing chip set","authors":"P. Ruetz, R. Brodersen","doi":"10.1109/ISSCC.1986.1157001","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1157001","url":null,"abstract":"The development of ICs for a 3×3 linear convolver and non-linear post processors, a 7×7 logic convolver, lookup tables, a contour tracer and line delays, used in realtime image processing at 10MHz, will be discussed. Implementation was in 4μm NMOS.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116270456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
A VLSI chip set for an integrated text and graphics video subsystem 一种集成文本和图形视频子系统的VLSI芯片组
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1156992
W. Blake, P. English, N. Forrester, T. Furlong, R. Rose, R. Watson
{"title":"A VLSI chip set for an integrated text and graphics video subsystem","authors":"W. Blake, P. English, N. Forrester, T. Furlong, R. Rose, R. Watson","doi":"10.1109/ISSCC.1986.1156992","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1156992","url":null,"abstract":"A chip set for a 1024×864 pixel, 60Hz non-interlaced display will be reported. The set allows simultaneous display of text and graphics at throughput rates of 20,000-characters per second and 8-million pixels per second, respectively. Features include smooth scrolling, clipping, scaling and rotation. In 3.5μm NMOS, typical power dissipation is 2W per chip.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123253419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A bipolar-CMOS field programmable array 一种双极cmos现场可编程阵列
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1156973
R. Murphy, T. McFarlane, C. Sporck, K. Rapp, R. Smolen, W. Collins, R. Ramus, M. Millhollan, J. Readdie
{"title":"A bipolar-CMOS field programmable array","authors":"R. Murphy, T. McFarlane, C. Sporck, K. Rapp, R. Smolen, W. Collins, R. Ramus, M. Millhollan, J. Readdie","doi":"10.1109/ISSCC.1986.1156973","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1156973","url":null,"abstract":"A 500mW, TTL-CMOS I/O compatible, field-programmable array logic IC with a standby power dissipation of 5mW and a propagation delay of 24ns, will be discussed. The process offers bipolar devices with β of 100 and fTof 1.9 GHz, and 2μm CMOS devices.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"274 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122764900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An 8b 250MHz A/D converter 8b 250MHz A/D转换器
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1156903
B. Peetz, B. Hamilton, J. Kang
{"title":"An 8b 250MHz A/D converter","authors":"B. Peetz, B. Hamilton, J. Kang","doi":"10.1109/ISSCC.1986.1156903","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1156903","url":null,"abstract":"An 8b converter, fabricated in a 5GHz, oxide-isolated bipolar process, will be reported. Full power bandwidth is 125MHz. The packaging used for the converter accomodates a power dissipation of 12W.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122934856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An 80MHz 8b CMOS D/A converter 80MHz 8b CMOS D/A转换器
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1157020
T. Miki, Y. Nakamura, M. Nakaya, S. Asai, Y. Akasaka, Y. Horiba
{"title":"An 80MHz 8b CMOS D/A converter","authors":"T. Miki, Y. Nakamura, M. Nakaya, S. Asai, Y. Akasaka, Y. Horiba","doi":"10.1109/ISSCC.1986.1157020","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1157020","url":null,"abstract":"This report will discuss an 80MHz 8b D/A converter based on current switching which consumes 145mW utilizing a 2μm CMOS process. Symmetrical switching of the current sources reduces noise on the ground line.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123538471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 1Mb DRAM with 33MHz serial I/O ports 带有33MHz串行I/O端口的1Mb DRAM
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1157012
K. Ohta, H. Kawai, M. Fujii, S. Ueda, Y. Furuta
{"title":"A 1Mb DRAM with 33MHz serial I/O ports","authors":"K. Ohta, H. Kawai, M. Fujii, S. Ueda, Y. Furuta","doi":"10.1109/ISSCC.1986.1157012","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1157012","url":null,"abstract":"THIS PAPER WILL DESCRIBE a 1Mb image memory, 256k x 4 DRAM with 30ns bit rate serial 1/0 ports with special features for TV or VCR image display applications. In this development, 4b wide data are shifted into 4 sets of 8 b shift registers, loaded from the DRAM to other 4 sets of 8b shift registers and shifted out through serial ports. These operations are performed under 33MHz clock without any idle time. One field of a color TV signal has 256k x 8b, so that only two chips of this memory are enough to store it. A block diagram of the memory is shown in Figure 1. The DRAM block is constructed with 512 rows and 2,048 columns. 2,048 columns are divided into 4 groups, and each group has 64 x 8b columns. Serial data handling block is constructed with four sets of 8 I/O selectors, 8b serialin and serial-out registers. Figure 2 shows the timing diagram of this memory. In the write cycle, input data are shifted into an 8 b serial-in register by synchronizing the rising edge ofSIC clock through data input pins, D l 1 to D14. At the falling edge of WS clock, 32b data in four 8b serial-in re&ers are transfered to 32b data registers. And at the falling edge of WE clock, 32b data go through I/O selectors and to 32b memory cells which have been selected and activated by IS &dress pins (A0 A14), a chip select pin (CS), and a chip enable pin (CE). In the read mode, readout data from the selected address are sensed, go through I/O selectors and are loaded on four 8b serial out registers at the falling edge of RS clock. Data from the serial out registers are shifted out serially at every rising edge of SOC clock through data","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122648831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 15Mb/s data separator and write compensation circuit for Winchester disk drives 用于温彻斯特磁盘驱动器的15Mb/s数据分离器和写入补偿电路
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1156882
J. Kellis, S. Mehrotra
{"title":"A 15Mb/s data separator and write compensation circuit for Winchester disk drives","authors":"J. Kellis, S. Mehrotra","doi":"10.1109/ISSCC.1986.1156882","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1156882","url":null,"abstract":"This report will cover a data separator that obtains phase acquisition by in-phase starting of a VCO. An onpchip voltage sweep circuit provides write precompensation.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125085228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A basic-cell buffer 440K-transistor CMOS masterslice 基本单元缓冲440k晶体管CMOS主片
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1986.1156920
T. Arakawa, M. Ueda, Y. Saito, T. Fujimura, S. Asai, M. Terai, Y. Akasaka, Y. Kuramitsu
{"title":"A basic-cell buffer 440K-transistor CMOS masterslice","authors":"T. Arakawa, M. Ueda, Y. Saito, T. Fujimura, S. Asai, M. Terai, Y. Akasaka, Y. Kuramitsu","doi":"10.1109/ISSCC.1986.1156920","DOIUrl":"https://doi.org/10.1109/ISSCC.1986.1156920","url":null,"abstract":"A masterslice containing 437,976 transistors on a 12.7×11.96mm2chip and employing a gate-isolation concept with no fixed routing tracks and no dedicated buffers, will be reported. The masterslice has been fabricated in 1.3μm CMOS technology. A 13MHz facsimile processor has been implemented using this array.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125136111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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