一种双极cmos现场可编程阵列

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1986.1156973

R. Murphy, T. McFarlane, C. Sporck, K. Rapp, R. Smolen, W. Collins, R. Ramus, M. Millhollan, J. Readdie

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引用次数: 6

摘要

本文将讨论一种500mW、TTL-CMOS I/O兼容、待机功耗为5mW、传播延迟为24ns的现场可编程阵列逻辑IC。该工艺可提供β为100和fTof为1.9 GHz的双极器件，以及2μm CMOS器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A bipolar-CMOS field programmable array

A 500mW, TTL-CMOS I/O compatible, field-programmable array logic IC with a standby power dissipation of 5mW and a propagation delay of 24ns, will be discussed. The process offers bipolar devices with β of 100 and fTof 1.9 GHz, and 2μm CMOS devices.

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来源期刊

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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