{"title":"带有33MHz串行I/O端口的1Mb DRAM","authors":"K. Ohta, H. Kawai, M. Fujii, S. Ueda, Y. Furuta","doi":"10.1109/ISSCC.1986.1157012","DOIUrl":null,"url":null,"abstract":"THIS PAPER WILL DESCRIBE a 1Mb image memory, 256k x 4 DRAM with 30ns bit rate serial 1/0 ports with special features for TV or VCR image display applications. In this development, 4b wide data are shifted into 4 sets of 8 b shift registers, loaded from the DRAM to other 4 sets of 8b shift registers and shifted out through serial ports. These operations are performed under 33MHz clock without any idle time. One field of a color TV signal has 256k x 8b, so that only two chips of this memory are enough to store it. A block diagram of the memory is shown in Figure 1. The DRAM block is constructed with 512 rows and 2,048 columns. 2,048 columns are divided into 4 groups, and each group has 64 x 8b columns. Serial data handling block is constructed with four sets of 8 I/O selectors, 8b serialin and serial-out registers. Figure 2 shows the timing diagram of this memory. In the write cycle, input data are shifted into an 8 b serial-in register by synchronizing the rising edge ofSIC clock through data input pins, D l 1 to D14. At the falling edge of WS clock, 32b data in four 8b serial-in re&ers are transfered to 32b data registers. And at the falling edge of WE clock, 32b data go through I/O selectors and to 32b memory cells which have been selected and activated by IS &dress pins (A0 A14), a chip select pin (CS), and a chip enable pin (CE). In the read mode, readout data from the selected address are sensed, go through I/O selectors and are loaded on four 8b serial out registers at the falling edge of RS clock. Data from the serial out registers are shifted out serially at every rising edge of SOC clock through data","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 1Mb DRAM with 33MHz serial I/O ports\",\"authors\":\"K. Ohta, H. Kawai, M. Fujii, S. Ueda, Y. Furuta\",\"doi\":\"10.1109/ISSCC.1986.1157012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"THIS PAPER WILL DESCRIBE a 1Mb image memory, 256k x 4 DRAM with 30ns bit rate serial 1/0 ports with special features for TV or VCR image display applications. In this development, 4b wide data are shifted into 4 sets of 8 b shift registers, loaded from the DRAM to other 4 sets of 8b shift registers and shifted out through serial ports. These operations are performed under 33MHz clock without any idle time. One field of a color TV signal has 256k x 8b, so that only two chips of this memory are enough to store it. A block diagram of the memory is shown in Figure 1. The DRAM block is constructed with 512 rows and 2,048 columns. 2,048 columns are divided into 4 groups, and each group has 64 x 8b columns. Serial data handling block is constructed with four sets of 8 I/O selectors, 8b serialin and serial-out registers. Figure 2 shows the timing diagram of this memory. In the write cycle, input data are shifted into an 8 b serial-in register by synchronizing the rising edge ofSIC clock through data input pins, D l 1 to D14. At the falling edge of WS clock, 32b data in four 8b serial-in re&ers are transfered to 32b data registers. And at the falling edge of WE clock, 32b data go through I/O selectors and to 32b memory cells which have been selected and activated by IS &dress pins (A0 A14), a chip select pin (CS), and a chip enable pin (CE). In the read mode, readout data from the selected address are sensed, go through I/O selectors and are loaded on four 8b serial out registers at the falling edge of RS clock. Data from the serial out registers are shifted out serially at every rising edge of SOC clock through data\",\"PeriodicalId\":440688,\"journal\":{\"name\":\"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE International Solid-State Circuits Conference. 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引用次数: 2
摘要
本文将描述一种1Mb图像存储器,256k x 4 DRAM,具有30ns比特率串行1/0端口,具有电视或录像机图像显示应用的特殊功能。在这种开发中,4b宽数据被转移到4组8b移位寄存器中,从DRAM加载到其他4组8b移位寄存器,并通过串行端口移出。这些操作在33MHz的时钟下执行,没有任何空闲时间。一个彩色电视信号场的大小为256k × 8b,因此,只需要两块芯片就可以存储它。存储器的框图如图1所示。DRAM块由512行和2,048列组成。2048列分为4组,每组64 × 8b列。串行数据处理块由四组8个I/O选择器、8b串行和串行输出寄存器组成。图2显示了该内存的时序图。在写周期中,通过数据输入引脚d1到D14同步sic时钟的上升沿,将输入数据移到8b串行寄存器中。在WS时钟下降沿,4个8b串行采集器中的32b数据被传输到32b数据寄存器中。在WE时钟的下降沿,32b数据通过I/O选择器和32b存储单元,这些存储单元由IS &dress引脚(A0 A14)、芯片选择引脚(CS)和芯片使能引脚(CE)选择和激活。在读模式下,从所选地址读出的数据被感知,通过I/O选择器,并加载到RS时钟下降沿的四个8b串行输出寄存器上。来自串行输出寄存器的数据通过数据在SOC时钟的每个上升沿串行地移出
THIS PAPER WILL DESCRIBE a 1Mb image memory, 256k x 4 DRAM with 30ns bit rate serial 1/0 ports with special features for TV or VCR image display applications. In this development, 4b wide data are shifted into 4 sets of 8 b shift registers, loaded from the DRAM to other 4 sets of 8b shift registers and shifted out through serial ports. These operations are performed under 33MHz clock without any idle time. One field of a color TV signal has 256k x 8b, so that only two chips of this memory are enough to store it. A block diagram of the memory is shown in Figure 1. The DRAM block is constructed with 512 rows and 2,048 columns. 2,048 columns are divided into 4 groups, and each group has 64 x 8b columns. Serial data handling block is constructed with four sets of 8 I/O selectors, 8b serialin and serial-out registers. Figure 2 shows the timing diagram of this memory. In the write cycle, input data are shifted into an 8 b serial-in register by synchronizing the rising edge ofSIC clock through data input pins, D l 1 to D14. At the falling edge of WS clock, 32b data in four 8b serial-in re&ers are transfered to 32b data registers. And at the falling edge of WE clock, 32b data go through I/O selectors and to 32b memory cells which have been selected and activated by IS &dress pins (A0 A14), a chip select pin (CS), and a chip enable pin (CE). In the read mode, readout data from the selected address are sensed, go through I/O selectors and are loaded on four 8b serial out registers at the falling edge of RS clock. Data from the serial out registers are shifted out serially at every rising edge of SOC clock through data