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Four-Dimensional Scanning Transmission Electron Microscopy: Part II, Crystal Orientation and Phase, Short and Medium Range Order, and Electromagnetic Fields 四维扫描透射电子显微镜：第二部分，晶体定向和相位、中短程有序和电磁场
EDFA Technical Articles Pub Date : 2024-02-01 DOI: 10.31399/asm.edfa.2024-1.p004
A. Johnston-Peck, A. Herzing
{"title":"Four-Dimensional Scanning Transmission Electron Microscopy: Part II, Crystal Orientation and Phase, Short and Medium Range Order, and Electromagnetic Fields","authors":"A. Johnston-Peck, A. Herzing","doi":"10.31399/asm.edfa.2024-1.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2024-1.p004","url":null,"abstract":"\u0000 Four-dimensional scanning transmission electron microscopy (4D-STEM) is a spatially resolved electron diffraction technique that records the electron scattering distribution at each point of the electron beam raster, thereby producing a four-dimensional dataset. This second installment of this series presents applications of 4D-STEM, including measurements of crystal orientation and phase, short- and medium-range order, and internal electromagnetic fields.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140464592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Processes for Thinning and Polishing Highly Warped Die to a Nearly Consistent Thickness: Part III 将高翘曲模具变薄并抛光至近乎一致厚度的工艺：第三部分
EDFA Technical Articles Pub Date : 2024-02-01 DOI: 10.31399/asm.edfa.2024-1.p024
Kirk A. Martin
{"title":"Processes for Thinning and Polishing Highly Warped Die to a Nearly Consistent Thickness: Part III","authors":"Kirk A. Martin","doi":"10.31399/asm.edfa.2024-1.p024","DOIUrl":"https://doi.org/10.31399/asm.edfa.2024-1.p024","url":null,"abstract":"\u0000 This article is the third in a multi-part series describing techniques for thinning and polishing a highly warped die. Tighter thickness tolerance and thinner samples are always desired. The first article addressed global thinning of a sample. The second focused on the process and problems of thinning only the area of interest. This installment covers processes and considerations for both global and area of interest treatment and provides reference process recipes.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140463365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Electronics Resurgence Initiative 2.0 for U.S. Semiconductor Manufacturing 美国半导体制造业电子复兴计划 2.0
EDFA Technical Articles Pub Date : 2024-02-01 DOI: 10.31399/asm.edfa.2024-1.p002
Michael DiBattista
{"title":"The Electronics Resurgence Initiative 2.0 for U.S. Semiconductor Manufacturing","authors":"Michael DiBattista","doi":"10.31399/asm.edfa.2024-1.p002","DOIUrl":"https://doi.org/10.31399/asm.edfa.2024-1.p002","url":null,"abstract":"\u0000 The second Electronics Resurgence Initiative (ERI 2.0), sponsored by the U.S. Defense Advanced Research Project Agency (DARPA) Microsystems Technology Office (MTO), is focused on driving next generation dual use microelectronics for national security and domestic needs. The initiative focuses on creating U.S. capability for three-dimensional heterogeneous integration (3DHI) manufacturing and pursuing focused research for the manufacture of complex 3D microsystems. This guest editorial describes the outcomes from a three-day summit (Seattle, Washington, August 2023) where the initiative was launched.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140469384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced Characterization of Materials Using Atom Probe Tomography 利用原子探针断层扫描技术对材料进行高级表征
EDFA Technical Articles Pub Date : 2024-02-01 DOI: 10.31399/asm.edfa.2024-1.p014
Jacob M. Garcia, A. Chiaramonti
{"title":"Advanced Characterization of Materials Using Atom Probe Tomography","authors":"Jacob M. Garcia, A. Chiaramonti","doi":"10.31399/asm.edfa.2024-1.p014","DOIUrl":"https://doi.org/10.31399/asm.edfa.2024-1.p014","url":null,"abstract":"\u0000 New materials integration and improved design can be promoted by using atom probe tomography (APT) as an analysis technique. This article provides an overview of APT principles and setups and provides diverse examples that focus on its use to characterize electronic devices.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140470359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser-Based Copper Deposition for Semiconductor Debug Applications 用于半导体调试应用的激光沉铜技术
EDFA Technical Articles Pub Date : 2023-11-01 DOI: 10.31399/asm.edfa.2023-4.p012
Michael DiBattista, Scott Silverman, Matthew M. Mulholland
{"title":"Laser-Based Copper Deposition for Semiconductor Debug Applications","authors":"Michael DiBattista, Scott Silverman, Matthew M. Mulholland","doi":"10.31399/asm.edfa.2023-4.p012","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p012","url":null,"abstract":"Laser-assisted copper deposition provides a key technology for analyzing complex packaging and integrated circuit challenges. Laser-based copper deposition techniques have been shown to be useful in combination with traditional FIB techniques to improve resistivity, deposition rate, and timing.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139295094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Voltage Contrast within Electron Microscopy: From a Curious Effect to Debugging Modern ICs 电子显微镜中的电压对比：从奇异效应到调试现代集成电路
EDFA Technical Articles Pub Date : 2023-11-01 DOI: 10.31399/asm.edfa.2023-4.p028
James Vickers, Blake Freeman, Neel Leslie
{"title":"Voltage Contrast within Electron Microscopy: From a Curious Effect to Debugging Modern ICs","authors":"James Vickers, Blake Freeman, Neel Leslie","doi":"10.31399/asm.edfa.2023-4.p028","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p028","url":null,"abstract":"A scanning electron microscope system measures voltage contrast on device-under-test surfaces. This article addresses a limited set of applications that rely on voltage contrast (VC) measurements in SEM systems, showing how VC measurements can probe electrical activity running at speeds as high as 2 GHz on modern active integrated circuits.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139299723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superconducting X-ray Sensors for Tomography of Microelectronics 用于微电子断层扫描的超导 X 射线传感器
EDFA Technical Articles Pub Date : 2023-11-01 DOI: 10.31399/asm.edfa.2023-4.p004
Joseph W. Fowler, P. Szypryt, D. Swetz, Zachary H. Levine
{"title":"Superconducting X-ray Sensors for Tomography of Microelectronics","authors":"Joseph W. Fowler, P. Szypryt, D. Swetz, Zachary H. Levine","doi":"10.31399/asm.edfa.2023-4.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p004","url":null,"abstract":"The high energy-resolving power of superconducting x-ray detectors reduces unwanted x-ray backgrounds, uses x-ray photons efficiently, and allows for discrimination among multiple chemical elements in a sample. This article discusses the challenges of analyzing the internal structure and composition of integrated circuits, and how 3D imaging can benefit manufacturers and researchers. It covers the development of superconducting x-ray sensors, their advantages over traditional sensors, potential applications, and focus areas for future work to develop this technology.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139304725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Innovative Multi-Probe Tomographic Atomic Force Microscope for Materials Research and Failure Analysis 用于材料研究和失效分析的创新型多探针层析原子力显微镜
EDFA Technical Articles Pub Date : 2023-11-01 DOI: 10.31399/asm.edfa.2023-4.p020
D. Sharma, M. Tedaldi, Patrick Hole, A.D.L. Humphris, L. Wouters, T. Hantschel, U. Celano
{"title":"An Innovative Multi-Probe Tomographic Atomic Force Microscope for Materials Research and Failure Analysis","authors":"D. Sharma, M. Tedaldi, Patrick Hole, A.D.L. Humphris, L. Wouters, T. Hantschel, U. Celano","doi":"10.31399/asm.edfa.2023-4.p020","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p020","url":null,"abstract":"This article describes recent advancements in multi-probe sensing schemes and development of a tomographic atomic force microscopy tool for materials research and failure analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139302449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The EDFAS FA Technology Roadmap—Die-Level Roadmap Council (DLRC) EDFAS FA 技术路线图--芯片级路线图理事会 (DLRC)
EDFA Technical Articles Pub Date : 2023-11-01 DOI: 10.31399/asm.edfa.2023-4.p057
Lesly Endrinal, S. H. Goh
{"title":"The EDFAS FA Technology Roadmap—Die-Level Roadmap Council (DLRC)","authors":"Lesly Endrinal, S. H. Goh","doi":"10.31399/asm.edfa.2023-4.p057","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-4.p057","url":null,"abstract":"The EDFAS Die-Level Roadmap Committee was formed to identify forthcoming challenges related to electrical fault isolation within the next five years and collaborate with various stakeholders, including industry, academia, and tool vendors, to devise practical solutions. To that end, the team has pinpointed five critical areas of focus: (1) laser-based, photon emission, and thermal; (2) 2D/2.5D/3D packaging; (3) product yield, test, and diagnostics; (4) general (leading edge technologies); and (5) system level, analog/RF, and digital functional.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139298784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure Analysis of Photonic Integrated Circuits 光子集成电路的失效分析
EDFA Technical Articles Pub Date : 2023-08-01 DOI: 10.31399/asm.edfa.2023-3.p023
Frieder Baumann, Brian Popielarski, Ryan Sweeney, Felix Beaudoin, K. Giewont
{"title":"Failure Analysis of Photonic Integrated Circuits","authors":"Frieder Baumann, Brian Popielarski, Ryan Sweeney, Felix Beaudoin, K. Giewont","doi":"10.31399/asm.edfa.2023-3.p023","DOIUrl":"https://doi.org/10.31399/asm.edfa.2023-3.p023","url":null,"abstract":"\u0000 This article introduces silicon photonics, describes what is needed for photonics failure analysis, and shows examples of analysis results for failures in modern silicon photonics circuits.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133125375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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