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Measuring Temperature in GaN HEMTs: An Approach Based on Raman Spectroscopy 基于拉曼光谱的氮化镓hemt温度测量方法
EDFA Technical Articles Pub Date : 2019-05-01 DOI: 10.31399/asm.edfa.2019-2.p010
B. Boudart, Y. Guhel
{"title":"Measuring Temperature in GaN HEMTs: An Approach Based on Raman Spectroscopy","authors":"B. Boudart, Y. Guhel","doi":"10.31399/asm.edfa.2019-2.p010","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p010","url":null,"abstract":"\u0000 This article describes a new technique for measuring temperatures in GaN HEMTs. The method is based on Raman spectroscopy and the use of cerium oxide particles that act like micro-Raman thermometers when scanned with a UV laser. As the article explains, phonon line shifts due to Raman scattering are used to estimate the temperature of GaN layers while surface temperatures are obtained through the cerium oxide particles. The results presented also verify that the particles, which are distributed over semiconductor and metal surfaces, do not modify the electric characteristics of the GaN devices.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121817402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superconducting Electronics: A New Frontier for Failure Analysis and Reliability 超导电子学:失效分析和可靠性的新前沿
EDFA Technical Articles Pub Date : 2019-05-01 DOI: 10.31399/asm.edfa.2019-2.p054
N. Missert
{"title":"Superconducting Electronics: A New Frontier for Failure Analysis and Reliability","authors":"N. Missert","doi":"10.31399/asm.edfa.2019-2.p054","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p054","url":null,"abstract":"\u0000 This column assesses the current state and outlook for superconducting device technology and its application in exascale computing.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114780047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Power of IC Reverse Engineering for Hardware Trust and Assurance IC逆向工程对硬件信任和保证的作用
EDFA Technical Articles Pub Date : 2019-05-01 DOI: 10.31399/asm.edfa.2019-2.p030
F. Ganji, Domenic Forte, N. Asadizanjani, M. Tehranipoor, Damon Woodward
{"title":"The Power of IC Reverse Engineering for Hardware Trust and Assurance","authors":"F. Ganji, Domenic Forte, N. Asadizanjani, M. Tehranipoor, Damon Woodward","doi":"10.31399/asm.edfa.2019-2.p030","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p030","url":null,"abstract":"\u0000 Integrated circuits embedded in everyday devices face an increased risk of tampering and intrusion. In this article, the authors explain how reverse engineering techniques, including automated image analysis, can be employed to provide trust and assurance when dealing with commercial off-the-shelf chips.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121516343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Data-driven Reliability for Datacenter Hard Disk Drives 数据中心硬盘驱动器的数据驱动可靠性
EDFA Technical Articles Pub Date : 2019-05-01 DOI: 10.31399/asm.edfa.2019-2.p016
Alan Yang, AmirEmad Ghassami, E. Rosenbaum, N. Kiyavash
{"title":"Data-driven Reliability for Datacenter Hard Disk Drives","authors":"Alan Yang, AmirEmad Ghassami, E. Rosenbaum, N. Kiyavash","doi":"10.31399/asm.edfa.2019-2.p016","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p016","url":null,"abstract":"\u0000 The problem of constructing reliable systems out of unreliable components is usually dealt with through a combination of redundancy and early retirement. This article assesses the potential of an intelligent failure prediction system that depends more on diagnostic data and analytics than built-in redundancy and costly replacement.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116274595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TIVA Measurements with Visible and 1064-nm Lasers 可见光和1064纳米激光的TIVA测量
EDFA Technical Articles Pub Date : 2019-05-01 DOI: 10.31399/asm.edfa.2019-2.p004
P. Tangyunyong, A. Rodarte
{"title":"TIVA Measurements with Visible and 1064-nm Lasers","authors":"P. Tangyunyong, A. Rodarte","doi":"10.31399/asm.edfa.2019-2.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p004","url":null,"abstract":"\u0000 Laser stimulation is widely used to reveal defects in ICs through either heating or photonic effects. The standard approach is to use lasers with wavelengths above the bandgap wavelength of silicon to create localized heating and below it to generate photocurrent. In practice, most FAs use 1340 nm (IR) lasers for TIVA measurements and either 532 nm (visible) or 1064 nm (near IR) lasers for LIVA analysis. However, as this article demonstrates, visible and near IR lasers can also be used for TIVA analysis and, in some cases, may be preferrable based on signal strength and spatial resolution.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123074490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure Risk Assessment of Laser Diode Stacks for a Martian Application 火星应用激光二极管堆失效风险评估
EDFA Technical Articles Pub Date : 2019-05-01 DOI: 10.31399/asm.edfa.2019-2.p022
Guillaume Thin, F. Bourcier, H. Moisan
{"title":"Failure Risk Assessment of Laser Diode Stacks for a Martian Application","authors":"Guillaume Thin, F. Bourcier, H. Moisan","doi":"10.31399/asm.edfa.2019-2.p022","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-2.p022","url":null,"abstract":"\u0000 This article describes the qualification process for a 1.8 kW laser diode stack designed for the Mars Curiosity rover. The seven-bar stack serves as the optical pump in a boom-mounted spectroscope attached to the front of the rover. Each laser bar is made of 62 single emitters and generates 260 W of instantaneous optical power. A detailed design analysis of the diode stack is presented along with the results of overstress testing and failure analysis.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129062071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ensuring Advanced Semiconductor Device Reliability using FA and Submicron Defect Detection 利用FA和亚微米缺陷检测确保先进半导体器件的可靠性
EDFA Technical Articles Pub Date : 2019-02-01 DOI: 10.31399/asm.edfa.2019-1.p020
Dusty Gray, D. Kendig, A. Tay, A. Shakouri
{"title":"Ensuring Advanced Semiconductor Device Reliability using FA and Submicron Defect Detection","authors":"Dusty Gray, D. Kendig, A. Tay, A. Shakouri","doi":"10.31399/asm.edfa.2019-1.p020","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-1.p020","url":null,"abstract":"\u0000 A noninvasive thermal imaging approach based on the thermoreflectance principle is proposed for analyzing advanced semiconductor devices. Several examples illustrate the value of this approach in detecting thermal anomalies and defects missed by other techniques.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132275917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Automated Methodology for Logic Characterization Vehicle Design 逻辑表征车辆设计的自动化方法
EDFA Technical Articles Pub Date : 2019-02-01 DOI: 10.31399/asm.edfa.2019-1.p012
Z. Liu, Ben Niewenhuis, Soumya Mittal, Phillip Fynan, R. D. Blanton
{"title":"An Automated Methodology for Logic Characterization Vehicle Design","authors":"Z. Liu, Ben Niewenhuis, Soumya Mittal, Phillip Fynan, R. D. Blanton","doi":"10.31399/asm.edfa.2019-1.p012","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-1.p012","url":null,"abstract":"\u0000 A new product-like test chip developed by engineers at Carnegie Mellon University overcomes the current limitations in conventional test chip design. This article discusses the advantages of the new chip, called the CM-LCV, and presents experimental results showing how it achieves fault coverages comparable to or better than benchmarking designs.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133643782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ISTFA 2018 Highlights: All Things Failure Analysis, in Four Impactful Days ISTFA 2018的亮点:在四个有影响力的日子里，对所有事物进行故障分析
EDFA Technical Articles Pub Date : 2019-02-01 DOI: 10.31399/asm.edfa.2019-1.p032
{"title":"ISTFA 2018 Highlights: All Things Failure Analysis, in Four Impactful Days","authors":"","doi":"10.31399/asm.edfa.2019-1.p032","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-1.p032","url":null,"abstract":"\u0000 The 44th International Symposium for Testing and Failure Analysis (ISTFA 2018) was held in Phoenix, Ariz., October 28 - November 1, 2018. This article provides a summary of the highlights and identifies key contributors to the event. It also includes a summary of a panel discussion on the topic “Failures Worth Analyzing.” It concludes with discussion highlights from the Focused Ion Beam, Sample Preparation, and Contactless Fault Isolation/Nanoprobing user group meetings held at the conference.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115355472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning Inside the Cell to Solve Complex FinFET Defect Mechanisms with Volume Scan Diagnosis 单元内机器学习解决复杂的FinFET缺陷机制与体积扫描诊断
EDFA Technical Articles Pub Date : 2019-02-01 DOI: 10.31399/asm.edfa.2019-1.p004
Manish Sharma, Yan Pan
{"title":"Machine Learning Inside the Cell to Solve Complex FinFET Defect Mechanisms with Volume Scan Diagnosis","authors":"Manish Sharma, Yan Pan","doi":"10.31399/asm.edfa.2019-1.p004","DOIUrl":"https://doi.org/10.31399/asm.edfa.2019-1.p004","url":null,"abstract":"This article presents a recent breakthrough in the use of machine learning in semiconductor FA. For the first time, cell-internal defects in FinFETs have not only been detected and diagnosed, but also refined, clarified, and resolved using cell-aware diagnosis along with root cause deconvolution (RCD) techniques. The authors describe the development of the methodology and evaluate the incremental improvements made with each step.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131704230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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