可见光和1064纳米激光的TIVA测量

P. Tangyunyong, A. Rodarte
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引用次数: 0

摘要

激光刺激被广泛应用于通过加热或光子效应来揭示集成电路中的缺陷。标准的方法是使用波长高于硅带隙波长的激光器来产生局部加热,低于硅带隙波长的激光器产生光电流。实际上,大多数FAs使用1340 nm(红外)激光进行TIVA测量,使用532 nm(可见光)或1064 nm(近红外)激光进行LIVA分析。然而,正如本文所演示的那样,可见光和近红外激光器也可用于TIVA分析,并且在某些情况下,根据信号强度和空间分辨率,可能更可取。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
TIVA Measurements with Visible and 1064-nm Lasers
Laser stimulation is widely used to reveal defects in ICs through either heating or photonic effects. The standard approach is to use lasers with wavelengths above the bandgap wavelength of silicon to create localized heating and below it to generate photocurrent. In practice, most FAs use 1340 nm (IR) lasers for TIVA measurements and either 532 nm (visible) or 1064 nm (near IR) lasers for LIVA analysis. However, as this article demonstrates, visible and near IR lasers can also be used for TIVA analysis and, in some cases, may be preferrable based on signal strength and spatial resolution.
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