{"title":"The experimental and numerical investigation on shear behaviour of solder ball in a wafer level chip scale package","authors":"Ye Zhang, Yangjian Xu, Y. Liu, A. Schoenberg","doi":"10.1109/ECTC.2010.5490737","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490737","url":null,"abstract":"The shear test under high strain rate is becoming a popular approach to investigate the fracture behaviour of a thermally attached solder ball under different strain rates. However, despite a substantial number of experimental tests being conducted recently, only a few numerical simulation works have been published. The lack of high performance computational analysis methods applicable to the evaluation of such a complex material and mechanical behaviour in solder interconnection, has yielded questionable accuracy of the simulation based on experimental observation. In this study, the experimental results regarding effects of shear loading speed are illustrated, and then three-dimensional explicit finite element analysis is employed to study dynamic responses of solder joints under ball impact testing. Through a three-dimensional explicit element analysis incorporated with a cohesive model, fracturing and fragmentation mechanisms, transient fracturing of the solder joint subjected to high speed impact test is investigated","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125182277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jing Shi, D. Popovic, N. Nettleton, T. Sze, D. Douglas, H. Thacker, J. Cunningham, K. Furuta, R. Kojima, Koichi Hirose, Kuopin Hwang
{"title":"Direct chip powering and enhancement of proximity communication through Anisotropic Conductive adhesive chip-to-chip bonding","authors":"Jing Shi, D. Popovic, N. Nettleton, T. Sze, D. Douglas, H. Thacker, J. Cunningham, K. Furuta, R. Kojima, Koichi Hirose, Kuopin Hwang","doi":"10.1109/ECTC.2010.5490948","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490948","url":null,"abstract":"Proximity communication (PxC) technology has attracted great attention in recent years for its potential in low power, high bandwidth multi-chip module applications. In our previously demonstrated PxC MCM package, a 3-chip sub-assembly with two Active chips communicated through a Bridge chip and was flip-chip bonded to the substrate. The Bridge and Active chips overlap, and are face-to face bonded with silicone-based adhesive. The low pin count Bridge chip (face-up) relied on the bonded Au wire to deliver power and low speed I/Os. The parasitic inductance of the bondwires limited bandwidth on the Bridge, which motivated an alternative way to power the face-up Bridge chip. In this paper, we report chip-to-chip bonding using Anisotropic Conductive Film (ACF) as the dielectric adhesive between PxC channels. ACF provided direct vertical conductive path to power the Bridge chip. In addition, the introduction of conductive particles could increase the effective dielectric constant of the adhesive which benefits capacitively- signal coupling for proximity communications. The bonding experiment was carried out using a two-stage alignment and bonding/cure process at Sony Chemical & Information Device Corporation. Physical characterizations such as SAT, SEM, EDX were carried out to investigate bond line, alignment and quality of the adhesive interfaces. The effect of the floating metallic particles inside the ACF material on the local capacitive channels was simulated using a commercial FEM solver Q3D Extractor from ANSYS. We also tested conductive channel continuity through boundary scan-chain test of the Island chips. The initial results indicates that ACF sandwiched between two chips formed a uniform, void free bondline.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"293 1‐2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113966900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Methodology for predicting C4 non-wets during the chip attach process","authors":"V. D. Khanna, S. M. Sri-Jayantha","doi":"10.1109/ECTC.2010.5490842","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490842","url":null,"abstract":"Balancing the level of substrate warp at reflow with other sources contributing to C4 non-wets is an important problem. To address this, a methodology to predict the probability of non-wets during the chip attach process of an organic package has been developed. A technique for quantifying the convex or concave warp of a substrate in the form of a Shape Inversion (SI) plot is introduced. Geometrical factors that influence non-wets such as C4 height, the pad's relative location, collapsed solder height etc. are described and their individual contributions to the non-wet conditions are computed. Combining these contributions onto the SI plot allows for a graphical representation of the non-wet probability. The technique is applied to a product substrate and the results compared with the actual yield observed during chip assembly.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131401426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Se-Hoon Park, Jongin Ryu, J. C. Kim, N. Kang, Jong Chul Park, Young-Ho Kim
{"title":"Fabrication and characterization of embedded active and passive device for wireless application","authors":"Se-Hoon Park, Jongin Ryu, J. C. Kim, N. Kang, Jong Chul Park, Young-Ho Kim","doi":"10.1109/ECTC.2010.5490663","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490663","url":null,"abstract":"In this study, the research of embedded active and passive package is carried out for miniaturized wireless module. We fabricated very small RF module which one bare chip (0.3mm × 0.5mm, SPDT switch IC) and three 0603(0.6mm × 0.3mm, MLCC) passive devices were buried into within 1.85mm × 1.5mm substrate. Used materials were compatible with PCB process such as polymer laminating, dry film patterning, electroless-electrolytic copper plating and atmospheric plasma treatment. We studied low pressure bonding process using rheology dependence of polymer on temperature to prevent fracture or crack from embedding chips into PCB. The embedded chip and passives were electrically interconnected by small laser via(30µm) and Cu pattern plating process after atmospheric pressure plasma treatment, which revealed an effect on filling of micro via and shape of fine pattern. The interconnection between chip pad and Cu were evaluated by SEM image, which shows Cu pattern of PCB and pad of passive was interconnected without intermetallic formation. However, intermetallic, Cu-Sn-Ni, formed between passive electrode and plated Cu layer, and molten Sn is segregated along the wall of via hole after reflow. DSC (Differenntial Scanning Calorimetry) analysis was employed to calculate and optimize the amount of curing. Polymer showed maximum 90° peel strength (~0.7kgf/cm) with Cu pattern when Cu is plated on polymer after pre-curing was 80~90% completed. The RF characterization of embedded chip PCB was evaluated by measuring s-parameters (S11; return loss and S21; insertion loss). Return loss was below 20dB up to 4GHz. As a results, the embedded chip module is able to be applied for 2~5 GHz frequency application (Bluetooth and WiFi) with small size and good performance.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131552904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Töpper, I. Ndip, R. Erxleben, L. Brusberg, N. Nissen, H. Schröder, H. Yamamoto, Guido Todt, H. Reichl
{"title":"3-D Thin film interposer based on TGV (Through Glass Vias): An alternative to Si-interposer","authors":"M. Töpper, I. Ndip, R. Erxleben, L. Brusberg, N. Nissen, H. Schröder, H. Yamamoto, Guido Todt, H. Reichl","doi":"10.1109/ECTC.2010.5490887","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490887","url":null,"abstract":"Interposers for SiP will become more and more important for advanced electronic systems. But through substrate vias are essential for the 3-D integration. Being a standard for laminate based materials this is much more complex for Si-wafers: High speed etching has to be combined with complex electrical isolation, diffusion barriers and void-free Cu-filling. Without doubt this can be solved in lab-scale but for high production scale cost is a tremendous barrier. Glass wafers with W-plugs have been intensively investigated in this paper. A new acronym has been posted to high-light this technology: TGV for Through Glass Vias. The results of modeling and simulation of TGV at RF/Microwave frequencies showed a very good compromise between wafer thickness, TGV-shape and via diameter for vertical metal plugs with 100 μm diameters in 500 μm thick glass wafer still very stable for thin film wafer processing without costly temporary wafer bonding processes. Therefore the HermeS® from Schott was chosen as the basis for a prototype of a bidirectional 4 × 10 Gbps electro-optical transceiver module. Thin film RDL and bumping of these wafers was possible without any modifications to Si-wafer. First thermal cycles showed very promising results for the reliability of this concept.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131612461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Realization of high spatial color uniformity for white light-emitting diodes by remote hemispherical YAG: Ce phosphor film","authors":"Zongyuan Liu, Kai Wang, Xiaobing Luo, Sheng Liu","doi":"10.1109/ECTC.2010.5490747","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490747","url":null,"abstract":"High spatial color uniformity is realized by fabricating high power white light-emitting diodes (LEDs) with hemispherical YAG: Ce phosphor film. An injection molding process is developed to produce the phosphor film. By better control of the process, homogenous distribution of the phosphor particles is achieved. The color uniformity can be as high as 80%–90%. Comparing with white LEDs fabricated by traditional phosphor dispensing method and commercial samples with conformal phosphor coating, improvements of spatial color uniformity are around 36%–43% and 6%–8%, respectively, by the hemispherical phosphor.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128148803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Tentzeris, R. Vyas, V. Lakafosis, A. Traille, A. Rida, G. Shaker
{"title":"Inkjet-printed system-on-paper/polymer “green” RFID and wireless sensors","authors":"M. Tentzeris, R. Vyas, V. Lakafosis, A. Traille, A. Rida, G. Shaker","doi":"10.1109/ECTC.2010.5490784","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490784","url":null,"abstract":"In this talk, inkjet-printed flexible antennas, RF electronics and sensors fabricated on paper and other polymer (e.g. LCP) substrates are introduced as a system-level solution for ultra-low-cost mass production of UHF Radio Frequency Identification (RFID) Tags and Wireless Sensor Nodes (WSN) in an approach that could be easily extended to other microwave and wireless applications. A compact inkjet-printed UHF “passive-RFID” antenna using the classic T-match approach and designed to match IC's complex impedance, is presented as a demonstrating prototype for this technology. In addition, the authors briefly touch up the state-of-the-art area of fully-integrated wireless sensor modules on paper and show the first ever 2D sensor integration with an RFID tag module on paper, as well as the possibility of a 3D multilayer paper-based RF/microwave structures, that could potentially set the foundation for the truly convergent wireless sensor ad-hoc networks of the future. Plus, the authors present benchmarking results for various scavenging approaches involving RF, kinetic and thermal energy. Various challenges of packaging, passives, antennas, sensors and power sources integration are investigated in terms of ruggedness, reliability and flexing performance for space, automotive, \"smart-skin\" and wearable applications. This is the first time a complete 3D \"green\" system-on-paper including vertical interconnects and silver epoxy for the attachment of IC's will be presented for operability in frequencies in excess of 900 MHz.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134119985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Thacker, Ying Luo, Jing Shi, I. Shubin, J. Lexau, Xuezhe Zheng, Guoliang Li, Jin Yao, Joannes M. Costa, T. Pinguet, A. Mekis, P. Dong, S. Liao, D. Feng, M. Asghari, R. Ho, K. Raj, James G. Mitchell, A. Krishnamoorthy, J. Cunningham
{"title":"Flip-chip integrated silicon photonic bridge chips for sub-picojoule per bit optical links","authors":"H. Thacker, Ying Luo, Jing Shi, I. Shubin, J. Lexau, Xuezhe Zheng, Guoliang Li, Jin Yao, Joannes M. Costa, T. Pinguet, A. Mekis, P. Dong, S. Liao, D. Feng, M. Asghari, R. Ho, K. Raj, James G. Mitchell, A. Krishnamoorthy, J. Cunningham","doi":"10.1109/ECTC.2010.5490965","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490965","url":null,"abstract":"Silicon photonics holds tremendous promise as an energy and bandwidth efficient interconnect technology for chip-to-chip and within-chip communications in high-performance computing systems. In this paper, we present a low-parasitic microsolder-based flip-chip integration method used to integrate silicon photonic modulators and photodetectors with high-speed VLSI circuits using chips fabricated on vastly different technology platforms. Both the hybrid-integrated silicon photonic transmit (Tx) and receive (Rx) components were tested to demonstrate record sub-picojoule-per-bit performance at 5 Gbps.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134585580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of bonding atmosphere on low-temperature wafer bonding","authors":"Yinghui Wang, T. Suga","doi":"10.1109/ECTC.2010.5490936","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490936","url":null,"abstract":"The influence of bonding atmosphere was investigated for the wafer bonding at 25~200°C using a surface activated bonding method. The results of the analysis of activated Si surfaces under different vacuum background and the residual gases in vacuum before and after Ar fast atom beam irradiation is reported. Based on the analysis, bonding of Si wafers in nitrogen atmosphere is demonstrated with showing the effect of the timing of nitrogen introduction into the bonding chamber. The bonding energy of the bonded Si-Si wafer may reach 2 J/m2 under the vacuum pressure of 5 × 10−5 Pa and N2 atmosphere by controlling the exposure time and the residual gas of water to less than 5 × 10−4 Pa-s. Using Au or Cu thin-films can reduce the influence of bonding atmosphere. Bond interfaces with few voids can be achieved, which is benefit on diffusion and plastic deformation of the Au or Cu thin-films.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122167234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improvement of the solder joint strength in a SAC 305 solder ball to a ENIG substrate using LF hydrogen radical treatment","authors":"Seung-Jae Jo, Ah-Reum Lee, C. Kang","doi":"10.5781/KWJS.2011.29.1.099","DOIUrl":"https://doi.org/10.5781/KWJS.2011.29.1.099","url":null,"abstract":"Joint strength between solder ball and pad on the substrate is one of the major factors which have effects on the electronic device reliability. To improve the strength of the solder joint, the efforts evaluation surface cleaning, heat treatment and change of solder composition have been in progress. This paper discussed a solder ball joint strength improvement using low frequency hydrogen radical surface treatment and focused on the effects of surface treatment conditions on the interfacial reaction and the shear strength of the solder ball. The shear strength between the solder ball and the pad increased about 30% in comparison with no treatment under the same reflow condition. Especially, at a treatment time of 5minutes, the shear strength considerably increased by 70% and the fracture mode of the shear test changed from interfacial fracture to the solder fracture.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124441026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}