{"title":"Investigation of Pb-free solder interconnect under drop impact by ball pull and shear tests","authors":"S. Chung, Mi-Jin Kim","doi":"10.1109/ECTC.2010.5490674","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490674","url":null,"abstract":"The reliability of Pb-free solder interconnect under drop impact was investigated. In this paper, solder ball pull and shear tests were introduced to assess the interconnect reliability since high speed pull and shear tests exhibit high strain rate deformation followed by brittle fracture of actual drop scenario. The design, material, and process parameters considered in this study are SR condition, Cu pad surface finish, and strain rate, respectively. The adhesion strength was measured and the failure mode was categorized in each test condition. Next, the maximum applied force in ball pull test was used for loading condition in finite element analysis to calculate the interfacial fracture toughness at the corresponding fracture location. The effect of parameters on interfacial reliability was shown by interfacial fracture toughness, and it was compared with the drop life of boardlevel reliability test to investigate the correlation. Finally, the applicability and limitation of ball pull/shear tests for replacing BLR test were discussed.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"262 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123901992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Predicting crack initiation and propagation using XFEM, CZM and peridynamics: A comparative study","authors":"A. Agwai, I. Guven, E. Madenci","doi":"10.1109/ECTC.2010.5490851","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490851","url":null,"abstract":"This study presents a comparison of extended finite elements (XFEM), cohesive zone model (CZM) and the peridynamic theory (PD). By comparisons against two experimental benchmark studies, the capability of these techniques to predict dynamic fracture is demonstrated through both qualitative and quantitative observations.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121146331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhaozhi Li, Sangil Lee, B. Lewis, P. Houston, D. Baldwin, G. Stout, T. Tessier, John L. Evans
{"title":"Sensitivity analysis of Pb free reflow profile parameters toward flip chip on silicon assembly yield, reliability and intermetallic compound characteristics","authors":"Zhaozhi Li, Sangil Lee, B. Lewis, P. Houston, D. Baldwin, G. Stout, T. Tessier, John L. Evans","doi":"10.1109/ECTC.2010.5490844","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490844","url":null,"abstract":"Flip chip process excels due to its low cost, fine pitch, small form factor and its ready-adaptation to the conventional Surface Mount Technology (SMT) process, in the fact that the reflow is often used to form the solder joint. As the use of Pb free solder is legislated today, it is vital to understand the impact of reflow process conditions on the formation of the flip chip solder joint, so that the assembly process of the flip chip can be better controlled. This paper introduces a comprehensive experimental study on the impact of Pb free reflow profile parameters towards flip chip on silicon assembly solder joint formation characteristics as well as the reliability performance. The reflow parameters studied include the soak time, peak temperature and time above liquidus. Three levels of each reflow parameter are investigated. The Response Surface Methodology (RSM) is used for Design of Experiment (DOE) to explore the quadratic effect of the investigated parameters. Results studied include the package assembly yield, package shear strength, intermetallic compound thickness as well as the package reliability performance. Study results show that the fine pitch flip chip on silicon package has a wide reflow process window to achieve 100% yield, if reflowed in a Nitrogen environment. Yield loss was found when the packages are reflowed in air. With the fifteen reflow profiles studied, it was found that the reflow parameters are not significant in terms of the package shear strength. For the intermetallic compound thickness, it was found that the time above liquidus is a significant factor, with a 99.9% confidence level. No statistical difference was found among packages assembled under different reflow conditions up to 2500 liquid to liquid thermal shock reliability testing.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129289413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Kannan, Anurag Gupta, Bruce C. Kim, F. Mohammed, Byoungchul Ahn
{"title":"Analysis of carbon nanotube based Through Silicon Vias","authors":"S. Kannan, Anurag Gupta, Bruce C. Kim, F. Mohammed, Byoungchul Ahn","doi":"10.1109/ECTC.2010.5490885","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490885","url":null,"abstract":"In this paper we have provided analysis of carbon nanotube (CNT) based Through Silicon Vias (TSVs) for package interconnects. The package interconnects are fundamental bottlenecks to achieving high performance and reliability. We have provided electrical modeling and performed simulations on TSV with copper and carbon nanotubes. The results from the CNT-based TSVs were greatly superior to conventional vias with copper.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129376509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of temperature on transition in failure modes for high speed impact test of solder joint and comparison with board level drop test","authors":"Pradosh Guruprasad, J. Pitarresi, B. Sykes","doi":"10.1109/ECTC.2010.5490685","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490685","url":null,"abstract":"An effort has been made in this study to evaluate the characteristics of solder joint failure by using a new high speed impact tester. Here, a more thorough understanding of the solder joint behavior is examined by characterizing the behavior with respect to varying temperature and impact profiles. This is done in an attempt to address solder joint failures in actual product that may be under operating temperatures and environments. Comparison between the high speed pendulum impact test and drop test was primarily made by evaluating the failure modes from these two tests. Energy absorbed by the solder in a single impact has been used to predict the reliability in a board level test. Also the effect of temperature on the reliability of solder interconnects and on the strain rate induced in the PCB during a drop test has been studied.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115921508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effects of thermal cycling parameters on lifetimes and failure mechanism of solder interconnections","authors":"T. Mattila, H. Xu, O. Ratia, M. Paulasto-Krockel","doi":"10.1109/ECTC.2010.5490910","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490910","url":null,"abstract":"The work presented in this paper focuses on a) clarifying the underlying physical failure mechanism of Sn-rich solder interconnections under thermomechanical loading and b) identifying the means to accelerate the failure mechanism by optimizing the dwell-times and ramp-rates of thermal cycling test. The statistical results showed that as the dwell-times were decreased the number of cycles to failure increased but the shortest testing time was achieved with 10-minute dwell-times. Increase of ramp-rate did not affect the number of cycles to failure but the time to failure was significantly reduced. Investigations of the nucleation of cracks in solder interconnections revealed that nucleation is much more dependent on the number of thermal cycles than on the studied test parameters and that the nucleation took place within about the first quarter of the average lifetimes. Furthermore, cracking of the SnAgCu interconnections under all thermal cycling conditions studied took place through the bulk of the solder interconnections along the continuous network of grain boundaries produced by recrystallization. An approach to further accelerate thermal cycling tests is proposed based on the formed understanding of the failure mechanism.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116347902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. F. Said, B. Bennett, F. Toth, Lina Karam, J. Pettinato
{"title":"Non-wet solder joint detection in processor sockets and BGA assemblies","authors":"A. F. Said, B. Bennett, F. Toth, Lina Karam, J. Pettinato","doi":"10.1109/ECTC.2010.5490846","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490846","url":null,"abstract":"The existence of non-wet solder joints in PCB sockets can cause boards failures and it's necessary to inspect theses sockets to locate any possible defective joints. 2D or advanced x-ray machines are used to image solder joints in processor sockets and make solder joints visible to be examined by the operator who determines if each individual joint is defective or not. This is a very time consuming process since each processor has an average of 150 images with 30 joints per image. An accurate and efficient non-wet detection method is proposed in this paper. The main components of the proposed method consist of region of interest (ROI) segmentation, feature extraction, reference-free classification, and automatic mapping. The ROI segmentation process is a noise-resilient segmentation method for the joint area. The centroids of the segmented joints (ROIs) are used as feature parameters to detect the suspect joints. The proposed reference-free classification can detect defective joints with high accuracy without the need for training data. An automatic mapping method is used to get the precise label and location of the suspect joint. The accuracy of the proposed method was determined to be 95.8% detection rate with 1.1% false alarm rate based on the examination of 56 sockets (500K joints). In comparison, the detection rates of currently available advanced x-ray tools with multi-dimension capability are in the range of 43% to 75%. The proposed method reduces the operator effort by 90%. The presented system identifies neighboring joints to any missed non-wet joints, which provides an operator with the capability to make 100% detection of all non-wets. The proposed scheme works with a 2D x-ray imaging device, which makes the proposed scheme relatively inexpensive to implement, and is very portable and easy to set up as compared to the available advanced x-ray tools with multi-dimension capability.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115600270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Room-temperature chip-stack interconnection using compliant bumps and wedge-incorporated electrodes","authors":"N. Watanabe, T. Asano","doi":"10.1109/ECTC.2010.5490730","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490730","url":null,"abstract":"We propose room-temperature chip-stack interconnection using mechanical caulking between compliant bumps and wedge-incorporated electrodes. In this method, cone-shaped compliant bumps made of Au are pressed into wedge-incorporated electrodes made of Au at room temperature in the ambient air. Because of the edge structures of the Au wedge incorporated electrodes, the pressing load is effectively applied to the interfaces between Au cone bumps and Au wedge-incorporated electrodes. Therefore, Au wedge-incorporated electrodes are caulked with Au cone bumps at low pressing load. By using this method, high-density inter-chip connections were realized at 0.50 gf/bump and 30 °C. The number of inter-chip connections realized was 30,600 with 20 μm pitch. It is also demonstrated that this method allows lower inter-chip connection resistance than the mechanical caulking between compliant bumps and doughnut-shaped electrodes.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114670597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"TSV manufacturing yield and hidden costs for 3D IC integration","authors":"J. Lau","doi":"10.1109/ECTC.2010.5490828","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490828","url":null,"abstract":"3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general, the TSV (through-silicon-via) separates the 3D IC packaging and 3D IC/Si integrations, i.e., the latter two use TSV, but 3D IC packaging does not. TSV for 3D integration is >26 years old technology, which (with a new concept that every chip could have two active surfaces) is the focus of this study. Emphasis is placed on the TSV manufacturing yield and hidden costs. A 3D integration roadmap is also provided.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126968039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. G. de Brugiere, F. Marion, M. Fendler, V. Mandrillon, A. Hazotte, M. Volpert, H. Ribot
{"title":"Micro tube insertion into indium, copper and other materials for 3D applications","authors":"B. G. de Brugiere, F. Marion, M. Fendler, V. Mandrillon, A. Hazotte, M. Volpert, H. Ribot","doi":"10.1109/ECTC.2010.5490732","DOIUrl":"https://doi.org/10.1109/ECTC.2010.5490732","url":null,"abstract":"The viability of inter-strata low pitch vertical interconnection technologies is mandatory for 3D applications. In order to increase the connection complexity and to reach a 10μm or even smaller interconnection pitch, a new room-temperature insertion technology has been proposed and developed using micro tubes as inserts [1]. In the present work, we study the load required to obtain a full and efficient insertion of a single micro tube into indium, copper or other materials. We use a modified nanoindenter with a very accurate load and displacement control, to qualify the insertion process. The nature of the couple constituted by the insert and the soft metal is of major importance. Our study focuses on two specific parameters: Mechanical properties of the soft metal; Combined geometries of the soft metal and the insert. Thanks to this study, we can give the best conditions to improve insertion load and time for different couple. Finally, some first chips hybridizations are performed and tested mechanically and electrically to validate our work.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128061832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}