垂直金属互连得益于钨直接键合

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) Pub Date : 2010-06-01 DOI:10.1109/ECTC.2010.5490643

L. Di Cioccio, P. Gueguen, Etienne Grouiller, L. Vandroux, V. Delaye, M. Rivoire, J. Lugand, L. Clavelier

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引用次数: 8

摘要

局部金属键合是3D技术实现的主要驱动因素之一，因为它允许堆积的模具之间的高垂直互连密度。本文介绍了钨包层的直接粘接。从键合机理和温度依赖性方面对铜和钨的直接键合进行了比较。

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Vertical metal interconnect thanks to tungsten direct bonding

Localized metal bonding is one of the main drivers for 3D technology implementation as it allows high vertical interconnection densities between piled up dies. In this paper we will present the direct bonding of tungsten blanket. The copper and tungsten direct bonding will be compared in terms of bonding mechanism and temperature dependence.

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2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

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