不同凸点材料的ENEPIG和CuSOP表面处理的电迁移(EM)寿命评估

Dong Wook Kim, J. K. J. Lee, Myung-June Lee, S. Pai, Stan Chen, F. Kuo
{"title":"不同凸点材料的ENEPIG和CuSOP表面处理的电迁移(EM)寿命评估","authors":"Dong Wook Kim, J. K. J. Lee, Myung-June Lee, S. Pai, Stan Chen, F. Kuo","doi":"10.1109/ECTC.2010.5490713","DOIUrl":null,"url":null,"abstract":"Eutectic PbSn solder joints assembled with CuSOP and ENEPIG surface finished substrates were tested at three different temperatures and input currents to predict EM life. Estimated EM life of CuSOP with PbSn solder system is 3 to 4 X longer than that of ENEPIG surface finish. Both EM failures in solder bumps are caused by void formation at the current crowding area and propagation mechanism, however, they exhibited two distinct failure modes. The Eutectic bump with ENEPIG finish failed due to the UBM over-consumption as a result of reaction of Ni with Sn while the EM failure of bumps assembled with CuSOP was caused by the crack created between bulk and Ni3Sn4 IMC. Nevertheless, the UBM was kept intact in the latter case. The difference of UBM consumption rate induced by Cu influx from the substrate is identified as the main reason of this performance difference. The failure mechanisms of both EM failures were proposed and discussed in details.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"274 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Evaluation of electromigration (EM) life of ENEPIG and CuSOP surface finishes with various solder bump materials\",\"authors\":\"Dong Wook Kim, J. K. J. Lee, Myung-June Lee, S. Pai, Stan Chen, F. Kuo\",\"doi\":\"10.1109/ECTC.2010.5490713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Eutectic PbSn solder joints assembled with CuSOP and ENEPIG surface finished substrates were tested at three different temperatures and input currents to predict EM life. Estimated EM life of CuSOP with PbSn solder system is 3 to 4 X longer than that of ENEPIG surface finish. Both EM failures in solder bumps are caused by void formation at the current crowding area and propagation mechanism, however, they exhibited two distinct failure modes. The Eutectic bump with ENEPIG finish failed due to the UBM over-consumption as a result of reaction of Ni with Sn while the EM failure of bumps assembled with CuSOP was caused by the crack created between bulk and Ni3Sn4 IMC. Nevertheless, the UBM was kept intact in the latter case. The difference of UBM consumption rate induced by Cu influx from the substrate is identified as the main reason of this performance difference. The failure mechanisms of both EM failures were proposed and discussed in details.\",\"PeriodicalId\":429629,\"journal\":{\"name\":\"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)\",\"volume\":\"274 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2010.5490713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2010.5490713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

用CuSOP和ENEPIG表面加工衬底组装的共晶PbSn焊点在三种不同的温度和输入电流下进行了测试,以预测EM寿命。使用PbSn焊料系统的CuSOP的EM寿命比使用ENEPIG表面处理的CuSOP的EM寿命长3到4倍。锡点的电磁破坏都是由电流拥挤区形成的空洞和扩展机制引起的,但它们表现出两种不同的破坏模式。带有ENEPIG的共晶凸包由于Ni与Sn反应导致UBM过度消耗而失效,而带有CuSOP的凸包由于本体与Ni3Sn4 IMC之间产生裂纹而导致EM失效。然而,后一种情况下,UBM完好无损。基材Cu流入引起的UBM消耗速率差异是造成这种性能差异的主要原因。提出并详细讨论了两种电磁破坏的破坏机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluation of electromigration (EM) life of ENEPIG and CuSOP surface finishes with various solder bump materials
Eutectic PbSn solder joints assembled with CuSOP and ENEPIG surface finished substrates were tested at three different temperatures and input currents to predict EM life. Estimated EM life of CuSOP with PbSn solder system is 3 to 4 X longer than that of ENEPIG surface finish. Both EM failures in solder bumps are caused by void formation at the current crowding area and propagation mechanism, however, they exhibited two distinct failure modes. The Eutectic bump with ENEPIG finish failed due to the UBM over-consumption as a result of reaction of Ni with Sn while the EM failure of bumps assembled with CuSOP was caused by the crack created between bulk and Ni3Sn4 IMC. Nevertheless, the UBM was kept intact in the latter case. The difference of UBM consumption rate induced by Cu influx from the substrate is identified as the main reason of this performance difference. The failure mechanisms of both EM failures were proposed and discussed in details.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信