CMOS compatible thin wafer processing using temporary mechanical wafer, adhesive and laser release of thin chips/wafers for 3D integration

B. Dang, P. Andry, C. Tsang, J. Maria, R. Polastre, R. Trzcinski, A. Prabhakar, J. Knickerbocker
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引用次数: 38

Abstract

This paper reports a thin wafer handling technology that is compatible to CMOS processing conditions to enable 3D integration and assembly with high throughput at low cost. Using pulsed ultraviolet (UV) radiation from excimer lasers, device wafers as thin as 50µm can be released from the temporary mechanical handler wafer in less than 1min. Bonding, adhesive, debonding and post debond clean processes were demonstrated. CMOS circuit test vehicles were shown to be compatible with this temporary bonding and debonding processes.
CMOS兼容薄晶圆加工采用临时机械晶圆、粘合剂和激光释放的薄芯片/晶圆进行3D集成
本文报道了一种与CMOS加工条件兼容的薄晶圆处理技术,以低成本实现高通量的3D集成和组装。利用准分子激光器的脉冲紫外线(UV)辐射,可以在不到1分钟的时间内从临时机械处理晶圆中释放出厚度为50µm的器件晶圆。演示了粘接、粘接、脱粘和脱粘后的清洁过程。CMOS电路测试车辆被证明与这种临时粘接和脱粘接工艺兼容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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