Room-temperature chip-stack interconnection using compliant bumps and wedge-incorporated electrodes

N. Watanabe, T. Asano
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引用次数: 5

Abstract

We propose room-temperature chip-stack interconnection using mechanical caulking between compliant bumps and wedge-incorporated electrodes. In this method, cone-shaped compliant bumps made of Au are pressed into wedge-incorporated electrodes made of Au at room temperature in the ambient air. Because of the edge structures of the Au wedge incorporated electrodes, the pressing load is effectively applied to the interfaces between Au cone bumps and Au wedge-incorporated electrodes. Therefore, Au wedge-incorporated electrodes are caulked with Au cone bumps at low pressing load. By using this method, high-density inter-chip connections were realized at 0.50 gf/bump and 30 °C. The number of inter-chip connections realized was 30,600 with 20 μm pitch. It is also demonstrated that this method allows lower inter-chip connection resistance than the mechanical caulking between compliant bumps and doughnut-shaped electrodes.
室温芯片堆叠互连使用兼容凸起和楔形集成电极
我们提出室温芯片堆叠互连使用机械填缝之间的柔性凸起和楔形集成电极。在这种方法中,在室温环境空气中,将由金制成的锥形弯曲凸起压入由金制成的楔形集成电极中。由于Au楔焊电极的边缘结构,压力载荷有效地施加在Au锥凸点和Au楔焊电极之间的界面上。因此,在低压力负荷下,金楔电极与金锥凸块嵌塞。利用该方法,在0.50 gf/bump和30°C条件下实现了高密度的芯片间连接。实现的芯片间连接数为30,600个,间距为20 μm。研究还表明,与柔性凸块和甜甜圈形状电极之间的机械嵌缝相比,这种方法允许更低的芯片间连接电阻。
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