3D集成电路的TSV制造良率与隐性成本

J. Lau
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引用次数: 153

摘要

3D集成包括3D IC封装、3D IC集成和3D Si集成。它们是不同的,一般来说,TSV(通硅通孔)将3D IC封装和3D IC/Si集成分开,即后两者使用TSV,但3D IC封装不使用TSV。用于3D集成的TSV是一项已有26年历史的技术,它是本研究的重点(每个芯片都可以有两个活动表面的新概念)。重点放在TSV制造良率和隐性成本。还提供了3D集成路线图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
TSV manufacturing yield and hidden costs for 3D IC integration
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general, the TSV (through-silicon-via) separates the 3D IC packaging and 3D IC/Si integrations, i.e., the latter two use TSV, but 3D IC packaging does not. TSV for 3D integration is >26 years old technology, which (with a new concept that every chip could have two active surfaces) is the focus of this study. Emphasis is placed on the TSV manufacturing yield and hidden costs. A 3D integration roadmap is also provided.
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