TSV manufacturing yield and hidden costs for 3D IC integration

J. Lau
{"title":"TSV manufacturing yield and hidden costs for 3D IC integration","authors":"J. Lau","doi":"10.1109/ECTC.2010.5490828","DOIUrl":null,"url":null,"abstract":"3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general, the TSV (through-silicon-via) separates the 3D IC packaging and 3D IC/Si integrations, i.e., the latter two use TSV, but 3D IC packaging does not. TSV for 3D integration is >26 years old technology, which (with a new concept that every chip could have two active surfaces) is the focus of this study. Emphasis is placed on the TSV manufacturing yield and hidden costs. A 3D integration roadmap is also provided.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"153","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2010.5490828","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 153

Abstract

3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general, the TSV (through-silicon-via) separates the 3D IC packaging and 3D IC/Si integrations, i.e., the latter two use TSV, but 3D IC packaging does not. TSV for 3D integration is >26 years old technology, which (with a new concept that every chip could have two active surfaces) is the focus of this study. Emphasis is placed on the TSV manufacturing yield and hidden costs. A 3D integration roadmap is also provided.
3D集成电路的TSV制造良率与隐性成本
3D集成包括3D IC封装、3D IC集成和3D Si集成。它们是不同的,一般来说,TSV(通硅通孔)将3D IC封装和3D IC/Si集成分开,即后两者使用TSV,但3D IC封装不使用TSV。用于3D集成的TSV是一项已有26年历史的技术,它是本研究的重点(每个芯片都可以有两个活动表面的新概念)。重点放在TSV制造良率和隐性成本。还提供了3D集成路线图。
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