基于硅通孔的碳纳米管分析

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) Pub Date : 2010-06-01 DOI:10.1109/ECTC.2010.5490885

S. Kannan, Anurag Gupta, Bruce C. Kim, F. Mohammed, Byoungchul Ahn

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引用次数: 26

摘要

本文对基于碳纳米管(CNT)的硅通孔(tsv)封装互连进行了分析。封装互连是实现高性能和可靠性的基本瓶颈。我们用铜纳米管和碳纳米管对TSV进行了电建模和模拟。基于碳纳米管的tsv的结果大大优于传统的铜通孔。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of carbon nanotube based Through Silicon Vias

In this paper we have provided analysis of carbon nanotube (CNT) based Through Silicon Vias (TSVs) for package interconnects. The package interconnects are fundamental bottlenecks to achieving high performance and reliability. We have provided electrical modeling and performed simulations on TSV with copper and carbon nanotubes. The results from the CNT-based TSVs were greatly superior to conventional vias with copper.

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2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

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