A. M. Jorgensen, K. Mogensen, Weimin Rong, P. Telleman, J. P. Kutter
{"title":"Bio/chemical microsystem designed for wafer scale testing","authors":"A. M. Jorgensen, K. Mogensen, Weimin Rong, P. Telleman, J. P. Kutter","doi":"10.1117/12.425298","DOIUrl":"https://doi.org/10.1117/12.425298","url":null,"abstract":"We have designed a bio/chemical microsystem for online monitoring of glucose concentrations during fermentation. The system contains several passive microfluidic components including an enzyme reactor, a flow lamination part and a detector. Detection is based on the reaction of hydrogen peroxide, that is produced from glucose in an enzyme reactor, with luminol. This chemiluminescent reaction generates light that is detected by an integrated back-side contacted photodiode array. Various tests during fabrication are outlined with the emphasis on microwave detected photo conductance decay. The presented microsystem has both fluidic and electrical connection points accessible from the backside. This allows simultaneous testing of both fluidic and electrical parts before dicing the wafer.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115169695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Vertical hall sensor of high sensitivity and excellent confinement fabricated on the (110) silicon substrate","authors":"H. Chiu, Shey-Shi Lu, Hai Lan","doi":"10.1117/12.425332","DOIUrl":"https://doi.org/10.1117/12.425332","url":null,"abstract":"A vertical Hall sensors fabricated on a (110) silicon substrate with good sensitivity and carrier confinement was demonstrated. It is known that sensitivity of a Hall sensor is related to carrier confinement and the thickness of a Hall plate. However, traditional vertical Hall plates fabricated on a (100) silicon substrate have difficulty in achieving high aspect ratio of the depth (corresponding to the width of a Hall plate) to the width (corresponding to the thickness of a Hall plate) of an etched `wall' for carrier confinement. Wet etching tends to form sloped sidewalls due to the formation of V-grooves on (100) silicon substrates while drying etching takes much time to form deep trenches. Therefore we propose to fabricate vertical Hall plates fabricated on (110) silicon substrate in this paper. It is well known that deep vertical walls can be fabricated on (110) silicon substrates by TMAH an-isotropic etching, which means that vertical Hall plates with high aspect ratio can easily formed by this simple wet etching. Experimental results from the vertical Hall sensors on (110) substrates showed a sensitivity of 64.1 V/AT, which is higher than that obtained by micro-machined vertical Hall sensor on (100) substrate.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114895725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"New actuation structure for the deformation of continuous mirrors for adaptive optics","authors":"E. Quevy, L. Buchaillot, D. Collard","doi":"10.1117/12.425306","DOIUrl":"https://doi.org/10.1117/12.425306","url":null,"abstract":"This work demonstrates a novel technique for the realization and the actuation of continuous-membrane for adaptive optic applications. This original device exhibits, for the first time, both positive and negative membrane deflection with individual pixel displacement of +/- 10 micrometers , which is one order of magnitude larger than usual approaches, without diffractive interference.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129570961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Blair, D. McMillan, J. Podlecki, M. Begbie, K. Yallup
{"title":"MEMS hybridization: bridging the free-space gap","authors":"P. Blair, D. McMillan, J. Podlecki, M. Begbie, K. Yallup","doi":"10.1117/12.425302","DOIUrl":"https://doi.org/10.1117/12.425302","url":null,"abstract":"The increasing demand for bandwidth is driving the development of new paradigms within the fibre optic telecomms industry and leading to the generation of a new range of optical components. One route being taken is the hybridization of discrete components into a single package to realize high functionality subsystems. The combination of MEMS with light guide technology is one hybridization pathway that is showing considerable potential. In the drive for novel functionality it is paramount that the performance parameters are not compromised, nor should the hybridization of discrete components lead to increased manufacturing and packaging complexity and reliability issues. A theoretical and experimental study of integration schemes has shown that it is possible to integrate MEMS components with light guide technologies using just simple air gaps while preserving key performance parameters.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128513745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fine-grained polysilicon films with built-in tensile strain","authors":"M. O. Rahman, M. Ando","doi":"10.1117/12.425294","DOIUrl":"https://doi.org/10.1117/12.425294","url":null,"abstract":"Polysilicon (P-Si) refers to the structure of the silicon crystals as they are applied to the glass substrate. Polysilicon crystals are larger, more regularly shaped and more uniformly oriented in comparison with amorphous silicon (A-Si) and thus polysilicon is the most widely used structural material in current microdevices that are manufactured by surface micro machining. Polysilicon film usually show s a compressive built-in strain field. Strain diagnostic structures are used to elucidate that polysilicon films with built-in tensile strain can be achieved. We have reported that Boron doping is an indirect method for strain measurement and lattice spacing changes can be modeled by (Delta) a equals a0 X (ri - rs/rs X (Ni/Ns) where ri and r2 can be regarded as a radius of impurities and silicon atoms and Ni and Ns are the concentration of impurities and silicon.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127947535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Gamble, Kam On Leong, S. H. Raza, B. Armstrong, S. Mitchell, Suidong Yang, V. Fusco, C. Stewart
{"title":"Coplanar waveguides on SOI and OPS substrates","authors":"H. Gamble, Kam On Leong, S. H. Raza, B. Armstrong, S. Mitchell, Suidong Yang, V. Fusco, C. Stewart","doi":"10.1117/12.425323","DOIUrl":"https://doi.org/10.1117/12.425323","url":null,"abstract":"Silicon is being investigated as a low cost, low loss substrate for MMICs. The conflicting requirements of low resistivity silicon for active device fabrication and very high resistivity silicon for low microwave transmission losses have been met by two differing technologies. In one technology the low loss CPW lines are fabricated on oxidized porous silicon (OPS) formed on 1-3 (Omega) -cm (100) silicon substrates. In the other technology SOI substrates are produced by bonding 1-3 (Omega) -cm silicon wafers to 2-4 k(Omega) -cm handle wafers which are covered with a layer of silicon dioxide on a layer of polycrystalline silicon. To minimize bowing of the silicon substrate it was found necessary to limit the OPS thickness to 10 micrometers . For the CPW lines the microwave losses on the OPS substrates were 8.5 dB/cm at 30 GHz and on the SOI wafers they were 2.2 dB/cm. The SOI wafers offer considerable promise for reliable low cost low loss MMIC substrates.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115014390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"3D-CSP: an innovative packaging method based on RMPD","authors":"Helge Bohlmann, Reiner Goetzen, A. Reinhardt","doi":"10.1117/12.425300","DOIUrl":"https://doi.org/10.1117/12.425300","url":null,"abstract":"A major bottleneck in the applications of microtechnologies are packaging and interconnection techniques. 3D-CSP (3D-Chip-Size- Packaging), which is based on RMPDTM, solves an extremely wide range of packaging problems. RMPDTM and 3D-CSP are discussed and applications presented.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114231372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Transport in a deformable microchannel flow","authors":"W. Chu, Jingyun Fang","doi":"10.1117/12.425329","DOIUrl":"https://doi.org/10.1117/12.425329","url":null,"abstract":"Investigation of the entrainment of fluids induced by a wavy deformation along walls in a confined falt-plane microchannel is conducted by using the relaxed Navier-Stokes model with velocity- slip boundary conditions. Both no-slip and slip flow cases are presented with the former ones matched with the previous results. Flow patterns tuned by critical reflux values a0 and Reynolds number are demonstrated especially for the free pumping case. a0 decreases due to slip-flow effects after we compared them with no-slip cases.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115848818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Profile control of SU-8 photoresist using different radiation sources","authors":"Z. Cui, D. Jenkins, A. Schneider, G. Mcbride","doi":"10.1117/12.425291","DOIUrl":"https://doi.org/10.1117/12.425291","url":null,"abstract":"Patterning of thick layer SU-8 photoresist has been investigated with different radiation sources, including electron beam, X-ray, i-line stepper, UV mercury lamp with collimator, as well as two different types of UV contact maskaligner. Feature profiles with thickness up to 1 mm have been compared. Among all the radiation sources, x-ray exposure from a synchrotron radiation source is found to produce the best feature dimension control and has the highest feature aspect ratio. I-line stepper can also produce features with steep side wall but is limited to less than 200 micrometers resist thickness. The illumination parallelism is the key to control the resist profile, no matter what radiation sources are used. Other issues such as process condition become important when resist layer thickness is over 500 micrometers . Conditions for better profile control with thicker layer SU-8 photoresist are suggested.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123818758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization and optimization of deep dry etching for MEMS applications","authors":"A. Rickard, Mark E. McNie","doi":"10.1117/12.425287","DOIUrl":"https://doi.org/10.1117/12.425287","url":null,"abstract":"Deep dry etching of silicon has become an increasingly important process for a number of applications, including optical and microinertial MEMS. The Bosch process, with alternate etch and deposition steps, has become a dominant technique. Key responses include etch rate and depth uniformity. Two of the most important factors determining these are aspect ratio dependent etching (ARDE) and loading effects: both global and local. An RSM (response surface methodology) experiment was performed as the basis for subsequent optimization of the etch with respect to ARDE. The wall angle, etch rate and uniformity across the wafer were kept within predefined limits. By sacrificing some etch rate (approximately equals 25%), it was possible to achieve more than a 50% reduction in the difference in etch depth between 2 micrometers and 20 micrometers wide features. Loading effects, dependent on the exposed surface area of silicon, cause local or global variations in the etch rate. To investigate these effects, silicon wafers were patterned with different densities to change the global exposed surface area from 1% - 27%. Local density variations were used to investigate microloading. The etch rate decreased almost linearly with global exposed silicon area. Local variations showed a less pronounced effect.","PeriodicalId":429610,"journal":{"name":"Microelectronic and MEMS Technologies","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125595027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}