Profile control of SU-8 photoresist using different radiation sources

Z. Cui, D. Jenkins, A. Schneider, G. Mcbride
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引用次数: 24

Abstract

Patterning of thick layer SU-8 photoresist has been investigated with different radiation sources, including electron beam, X-ray, i-line stepper, UV mercury lamp with collimator, as well as two different types of UV contact maskaligner. Feature profiles with thickness up to 1 mm have been compared. Among all the radiation sources, x-ray exposure from a synchrotron radiation source is found to produce the best feature dimension control and has the highest feature aspect ratio. I-line stepper can also produce features with steep side wall but is limited to less than 200 micrometers resist thickness. The illumination parallelism is the key to control the resist profile, no matter what radiation sources are used. Other issues such as process condition become important when resist layer thickness is over 500 micrometers . Conditions for better profile control with thicker layer SU-8 photoresist are suggested.
不同辐射源对SU-8光刻胶轮廓的控制
利用电子束、x射线、i线步进、带准直器的紫外汞灯以及两种不同类型的紫外接触掩模器,研究了厚层SU-8光刻胶的图像化。厚度达1毫米的特征轮廓进行了比较。在所有辐射源中,同步辐射源的x射线照射具有最佳的特征尺寸控制和最高的特征长宽比。直线步进也可以生产具有陡峭侧壁的特征,但限制在抗压厚度小于200微米。无论采用何种辐射源,照明平行度是控制抗蚀轮廓的关键。当抗蚀剂层厚度超过500微米时,工艺条件等其他问题变得重要。提出了采用较厚的SU-8光刻胶来更好地控制轮廓的条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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