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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)最新文献

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A Liquid Medium Coriolis Gyroscope based on Electrochemical Molecular Electronic Transducer for Low Angular Rate Sensing 基于电化学分子电子传感器的低角速率传感液体介质科里奥利陀螺仪
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103074
Y. Cheung, Hongyu Yu
{"title":"A Liquid Medium Coriolis Gyroscope based on Electrochemical Molecular Electronic Transducer for Low Angular Rate Sensing","authors":"Y. Cheung, Hongyu Yu","doi":"10.1109/EDTM55494.2023.10103074","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103074","url":null,"abstract":"This paper presents the design, fabrication, and characterization of a novel Coriolis gyroscope based on the electrochemical molecular electronic transducer (MET) technology. This gyroscope has a liquid electrolyte mass driven by a DC magnetohydrodynamic pump to create a circulating flow. Thus, improving structural robustness and also sensitivity compared to the thermal convective based. Experimental tests under angular velocities ranging from 0 to 300 °/s show a sensitivity of 20.91 mV/(°/s).","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115640301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Process Control Challenges and Solutions for Advanced Semiconductor Devices 先进半导体器件的过程控制挑战和解决方案
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103045
Y. Jee, Sang Hyun Han, S. Wolfling
{"title":"Process Control Challenges and Solutions for Advanced Semiconductor Devices","authors":"Y. Jee, Sang Hyun Han, S. Wolfling","doi":"10.1109/EDTM55494.2023.10103045","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103045","url":null,"abstract":"We report on the challenges of process control for advanced semiconductor devices and comprehensive solutions to overcome them. The challenges arise in the environment of 3D structures and process complexity where pitch decreases and aspect ratio increases at advanced technology nodes. In this work we will summarize how various strategies, including the Lab to Fab conversion of new source technology, are being implemented through several cases. We will also outline the need for further improvement.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114675109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of the Drift Layer of 0.6 – 1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time 提高抗短路时间的0.6 ~ 1.7 kV功率碳化硅mosfet漂移层设计
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103006
Prashant Singh, Akshay K, Hema Lata Rao Maddi, A. Agrawal, S. Karmalkar
{"title":"Design of the Drift Layer of 0.6 – 1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time","authors":"Prashant Singh, Akshay K, Hema Lata Rao Maddi, A. Agrawal, S. Karmalkar","doi":"10.1109/EDTM55494.2023.10103006","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103006","url":null,"abstract":"We propose a simple technique of raising the short circuit withstand time (SCWT) of 0.6 - 1.7 kV SiC power MOSFETs, where the drift layer resistance is a small fraction of the on-resistance. Using simulations, we show that the SCWT of these devices can be raised by upto 20% by increasing the thickness and lowering the doping of the drift layer at the cost of only 5 % increase in the on-resistance. This approach also raises the breakdown voltage by > 10%.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114512525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges 2d材料mosfet的接触:最新进展和突出挑战
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103009
S. Koester
{"title":"Contacts for 2D-Material MOSFETs: Recent Advances and Outstanding Challenges","authors":"S. Koester","doi":"10.1109/EDTM55494.2023.10103009","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103009","url":null,"abstract":"A review of advances in contact technology for 2D material MOSFETs is provided. Phase-engineered contacts to transition metal dichalcogenides (TMDCs) are reviewed, along with recent progress on semimetallic contacts to TMDCs. Finally, the outstanding manufacturing challenges are discussed.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114981465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of Mos2 Memtransistor with Poly-Si Source/Drain Featuring Tunable Conductance States and Boosted ION 具有可调电导状态和增强离子的多晶硅源/漏极Mos2 mem晶体管的演示
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103051
K. Li, M. K. Huang, Y. H. Wang, Y. Tseng, C. Su
{"title":"Demonstration of Mos2 Memtransistor with Poly-Si Source/Drain Featuring Tunable Conductance States and Boosted ION","authors":"K. Li, M. K. Huang, Y. H. Wang, Y. Tseng, C. Su","doi":"10.1109/EDTM55494.2023.10103051","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103051","url":null,"abstract":"Memtransistor, a hybrid transistor and memristor, features both semi-conductive and resistive switching properties. We demonstrate that the resistive property in both $text{MoS}_{2}$ crossbar memristor and planar memtransistor structures based on highly compatible CMOS process with heavily-doped poly-Si as bottom electrode (BE) and source/drain (S/D), respectively. Low-resistance/ high-resistance state current ratio $(mathrm{I}_{text{LRS}}/mathrm{I}_{text{HRS}})$ in memtransitors can be modified by both back gate and S/D electrodes, favoring operation of artificial neural networks. A boosted ION is found after the set process, exhibiting a new manner to acquire high-performance $text{MoS}_{2}$ devices. Our work presents a novel memtransistor concept based on 2D material device for memory and logic applications.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115148083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Breathable and Flexible Electronic Skin for Long-Term Electroencephalogram Monitoring 用于长期脑电图监测的透气柔性电子皮肤
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103024
Tianrui Cui, Ying-Fen Zeng, Xiaoshi Li, Y. Qiao, Ding Li, H. Tian, Yi Yang, Si-Fan Yang, Tian-ling Ren
{"title":"A Breathable and Flexible Electronic Skin for Long-Term Electroencephalogram Monitoring","authors":"Tianrui Cui, Ying-Fen Zeng, Xiaoshi Li, Y. Qiao, Ding Li, H. Tian, Yi Yang, Si-Fan Yang, Tian-ling Ren","doi":"10.1109/EDTM55494.2023.10103024","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103024","url":null,"abstract":"Daily long-term, real-time monitoring of electroencephalogram (EEG) signals is essential for disease diagnosis, health monitoring, and brain-computer interaction. This work presents a breathable and flexible graphene-polyurethane (PU) mesh electronic skin (GPMES). With excellent breathability (1.904 $text{kg}cdot mathrm{m}^{-2}cdot text{day}^{-1}$ at body temperature) comparable to naked skin, good flexibility, lightweight (1.5 mg), and low electrode-skin impedance (4.683 $mathrm{k}Omega$ at 1 kHz), the GPMES can be a promising candidate interface for long-term (> 10 h) and reliable daily EEG monitoring.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124682522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly Linear and Symmetric 2T Synaptic Device Composed of IGZO Transistors by Identical Charging and Discharging Characteristics 具有相同充放电特性的IGZO晶体管组成的高度线性对称2T突触器件
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103086
Suwon Seong, Seon-Woo Park, Hyunyoung Cho, Yoonyoung Chung
{"title":"Highly Linear and Symmetric 2T Synaptic Device Composed of IGZO Transistors by Identical Charging and Discharging Characteristics","authors":"Suwon Seong, Seon-Woo Park, Hyunyoung Cho, Yoonyoung Chung","doi":"10.1109/EDTM55494.2023.10103086","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103086","url":null,"abstract":"We propose a 2T synaptic device based on indium gallium zinc oxide (IGZO) transistors that linearly and symmetrically updates synaptic weights. The constant charging/discharging current of the write transistor in the saturation region controls the conductance of the read transistor. The proposed synaptic device exhibited outstanding linearity and symmetry, essential for highly accurate neural network systems.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"48 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125558774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robust Real-time 4K-UHD Videos Streaming Transmission through Photonic-based Terahertz Wireless Communication System 基于光子的太赫兹无线通信系统鲁棒实时4K-UHD视频流传输
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103088
Xu Miao, Po-Cheng Su, Fu-Kai Shih, Pouya Torkaman, K. Feng, Shang-Hua Yang
{"title":"Robust Real-time 4K-UHD Videos Streaming Transmission through Photonic-based Terahertz Wireless Communication System","authors":"Xu Miao, Po-Cheng Su, Fu-Kai Shih, Pouya Torkaman, K. Feng, Shang-Hua Yang","doi":"10.1109/EDTM55494.2023.10103088","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103088","url":null,"abstract":"This work presents a robust real-time 4K-UHD video streaming transmission through a broadband terahertz wireless communication system by employing a direct detection scheme and optical frequency tunable techniques. The real-time uncompressed 4K-UHD video signal with varying carrier frequencies of 125-, 175- and 225 GHz, over the wireless link distance of 1.5 meters, is applied to the wireless communication system. We also evaluated the terahertz wireless communication system by the received power of the detector.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125900518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suppressed Dynamic Avalanche and Enhanced Turn-off dV/dt Controllability in 3300V Scaled IGBTs 3300V比例igbt中抑制动态雪崩和增强关断dV/dt可控性
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10103121
Xiang Zhou, M. Fukui, K. Takeuchi, T. Saraya, T. Hiramoto
{"title":"Suppressed Dynamic Avalanche and Enhanced Turn-off dV/dt Controllability in 3300V Scaled IGBTs","authors":"Xiang Zhou, M. Fukui, K. Takeuchi, T. Saraya, T. Hiramoto","doi":"10.1109/EDTM55494.2023.10103121","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10103121","url":null,"abstract":"Dynamic performance has been compared systematically among 3300V scaled IGBTs with scaling factor (k) from 1 to 10 by TCAD simulations. Even with much stronger Injection Enhancement (IE) effect, Dynamic Avalanche (DA) in scaled IGBTs is proven to be more suppressed than in $mathrm{k}=1$ case, and it's demonstrated that IGBT scaling is able to break through the trade-off between lower on-state voltage drop and better switching controllability.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125916815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Oxide Interface Charges in Trench Field Stop IGBT 沟槽场停止IGBT中氧化物界面电荷的表征
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI: 10.1109/EDTM55494.2023.10102939
Zhi Lin Sim, Wei Mien Chin, Yi Xiang Bong, David Goh, V. C. Ngwan
{"title":"Characterization of Oxide Interface Charges in Trench Field Stop IGBT","authors":"Zhi Lin Sim, Wei Mien Chin, Yi Xiang Bong, David Goh, V. C. Ngwan","doi":"10.1109/EDTM55494.2023.10102939","DOIUrl":"https://doi.org/10.1109/EDTM55494.2023.10102939","url":null,"abstract":"Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interface charges. These charges are responsible for the device performance, stability, and long-term reliability degradation. In this work, we characterized the charges by performing various %H2/N2 forming gas annealing in FS IGBT and determined the optimal anneal condition to intrinsically passivate the oxide interface charges.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126003897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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