Prashant Singh, Akshay K, Hema Lata Rao Maddi, A. Agrawal, S. Karmalkar
{"title":"提高抗短路时间的0.6 ~ 1.7 kV功率碳化硅mosfet漂移层设计","authors":"Prashant Singh, Akshay K, Hema Lata Rao Maddi, A. Agrawal, S. Karmalkar","doi":"10.1109/EDTM55494.2023.10103006","DOIUrl":null,"url":null,"abstract":"We propose a simple technique of raising the short circuit withstand time (SCWT) of 0.6 - 1.7 kV SiC power MOSFETs, where the drift layer resistance is a small fraction of the on-resistance. Using simulations, we show that the SCWT of these devices can be raised by upto 20% by increasing the thickness and lowering the doping of the drift layer at the cost of only 5 % increase in the on-resistance. This approach also raises the breakdown voltage by > 10%.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of the Drift Layer of 0.6 – 1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time\",\"authors\":\"Prashant Singh, Akshay K, Hema Lata Rao Maddi, A. Agrawal, S. Karmalkar\",\"doi\":\"10.1109/EDTM55494.2023.10103006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a simple technique of raising the short circuit withstand time (SCWT) of 0.6 - 1.7 kV SiC power MOSFETs, where the drift layer resistance is a small fraction of the on-resistance. Using simulations, we show that the SCWT of these devices can be raised by upto 20% by increasing the thickness and lowering the doping of the drift layer at the cost of only 5 % increase in the on-resistance. This approach also raises the breakdown voltage by > 10%.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of the Drift Layer of 0.6 – 1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time
We propose a simple technique of raising the short circuit withstand time (SCWT) of 0.6 - 1.7 kV SiC power MOSFETs, where the drift layer resistance is a small fraction of the on-resistance. Using simulations, we show that the SCWT of these devices can be raised by upto 20% by increasing the thickness and lowering the doping of the drift layer at the cost of only 5 % increase in the on-resistance. This approach also raises the breakdown voltage by > 10%.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
