Highly Linear and Symmetric 2T Synaptic Device Composed of IGZO Transistors by Identical Charging and Discharging Characteristics

Abstract

We propose a 2T synaptic device based on indium gallium zinc oxide (IGZO) transistors that linearly and symmetrically updates synaptic weights. The constant charging/discharging current of the write transistor in the saturation region controls the conductance of the read transistor. The proposed synaptic device exhibited outstanding linearity and symmetry, essential for highly accurate neural network systems.