具有相同充放电特性的IGZO晶体管组成的高度线性对称2T突触器件

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103086

Suwon Seong, Seon-Woo Park, Hyunyoung Cho, Yoonyoung Chung

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引用次数: 0

摘要

我们提出了一种基于铟镓锌氧化物(IGZO)晶体管的2T突触装置，它可以线性和对称地更新突触权重。所述写晶体管在饱和区域的恒定充电/放电电流控制所述读晶体管的电导。所提出的突触装置表现出出色的线性和对称性，这对于高精度的神经网络系统至关重要。

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Highly Linear and Symmetric 2T Synaptic Device Composed of IGZO Transistors by Identical Charging and Discharging Characteristics

We propose a 2T synaptic device based on indium gallium zinc oxide (IGZO) transistors that linearly and symmetrically updates synaptic weights. The constant charging/discharging current of the write transistor in the saturation region controls the conductance of the read transistor. The proposed synaptic device exhibited outstanding linearity and symmetry, essential for highly accurate neural network systems.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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