3300V比例igbt中抑制动态雪崩和增强关断dV/dt可控性

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103121

Xiang Zhou, M. Fukui, K. Takeuchi, T. Saraya, T. Hiramoto

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引用次数: 0

摘要

通过TCAD仿真，系统地比较了3300V缩放igbt的动态性能，缩放系数k为1 ~ 10。即使具有更强的注入增强(IE)效应，也证明了缩放IGBT中的动态雪崩(DA)比在$\ mathm {k}=1$情况下得到了更好的抑制，并且证明了IGBT缩放能够突破更低的导通电压降和更好的开关可控性之间的权衡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Suppressed Dynamic Avalanche and Enhanced Turn-off dV/dt Controllability in 3300V Scaled IGBTs

Dynamic performance has been compared systematically among 3300V scaled IGBTs with scaling factor (k) from 1 to 10 by TCAD simulations. Even with much stronger Injection Enhancement (IE) effect, Dynamic Avalanche (DA) in scaled IGBTs is proven to be more suppressed than in $\mathrm{k}=1$ case, and it's demonstrated that IGBT scaling is able to break through the trade-off between lower on-state voltage drop and better switching controllability.

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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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