Demonstration of Mos2 Memtransistor with Poly-Si Source/Drain Featuring Tunable Conductance States and Boosted ION

Abstract

Memtransistor, a hybrid transistor and memristor, features both semi-conductive and resistive switching properties. We demonstrate that the resistive property in both $\text{MoS}_{2}$ crossbar memristor and planar memtransistor structures based on highly compatible CMOS process with heavily-doped poly-Si as bottom electrode (BE) and source/drain (S/D), respectively. Low-resistance/ high-resistance state current ratio $(\mathrm{I}_{\text{LRS}}/\mathrm{I}_{\text{HRS}})$ in memtransitors can be modified by both back gate and S/D electrodes, favoring operation of artificial neural networks. A boosted ION is found after the set process, exhibiting a new manner to acquire high-performance $\text{MoS}_{2}$ devices. Our work presents a novel memtransistor concept based on 2D material device for memory and logic applications.