2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)最新文献

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Efficient Discharge Waveform Distribution Measurement Using Active Machine Learning 基于主动机器学习的高效放电波形分布测量
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9995150
Yuting Xie, Ling Zhang, Junhui Chen, Da Li, Zhenzhong Yang, Dan Ren, Erping Li
{"title":"Efficient Discharge Waveform Distribution Measurement Using Active Machine Learning","authors":"Yuting Xie, Ling Zhang, Junhui Chen, Da Li, Zhenzhong Yang, Dan Ren, Erping Li","doi":"10.1109/EDAPS56906.2022.9995150","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9995150","url":null,"abstract":"Near-field scanning (NFS) is a promising method to capture the current propagation in an electronic system through an automated scanning system. This article presents a novel and efficient measurement method for discharge waveform distribution based on active machine learning using NFS. Implicitly, the query-by-committee (QBC) active learning method is adopted to select scanning points with high uncertainty. The proposed approach is computationally efficient in real-time NFS, demonstrates higher reconstruction accuracy than random sampling using the same amount of sparse samples, and is much more efficient than full scanning.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"1190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115828288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Current Crowding Phenomenon for Flip-Chip-on-Leadframe (FCOL) Package and its Impact on Electromigration Reliability 引线框架倒装芯片(FCOL)封装中一种新的电流拥挤现象及其对电迁移可靠性的影响
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9995226
Sylvester Ankamah-Kusi, Koduri K. Sreenivasan, R. Murugan
{"title":"A New Current Crowding Phenomenon for Flip-Chip-on-Leadframe (FCOL) Package and its Impact on Electromigration Reliability","authors":"Sylvester Ankamah-Kusi, Koduri K. Sreenivasan, R. Murugan","doi":"10.1109/EDAPS56906.2022.9995226","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9995226","url":null,"abstract":"Electromigration (EM) is a critical problem for interconnect reliability of modern integrated circuits (ICs) packages. In flip-chip-on-leadframe (FCOL) package, a new current crowding phenomenon at the solder joints interface is observed that exacerbates the maximum current density. To address this recent phenomenon, in this work, we detail the mechanisms of the electric current paths that lead to a potential adjustment of the average current density parameter in the current Black’s mean time to failure (MTTF) mathematical model. An appropriate design-of-experiment (DOE) for the FCOL package is developed. Through extensive simulation via a 3D quasi-static solver, the potential impact of this new phenomenon is assessed and quantified. A 35% increase in maximum current density was observed under the worst-case condition. Implications of the findings for future high-density microelectronic is under investigation experimentally.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115127719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid Copper-Graphene Package Interconnects for Channel Loss Improvement in High-Speed Serial Interfaces 高速串行接口中改善通道损耗的混合铜-石墨烯封装互连
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9995067
K. Nagarajan, Ajay Kumar Vaidhyanathan, Parthasarathy Ramaswamy, Suyash Kushwaha, Rohit Sharma
{"title":"Hybrid Copper-Graphene Package Interconnects for Channel Loss Improvement in High-Speed Serial Interfaces","authors":"K. Nagarajan, Ajay Kumar Vaidhyanathan, Parthasarathy Ramaswamy, Suyash Kushwaha, Rohit Sharma","doi":"10.1109/EDAPS56906.2022.9995067","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9995067","url":null,"abstract":"Data rates in high-speed interfaces like upcoming PCIe Gen6, SERDES, Ethernet are continuously increasing, and the design specifications are becoming more stringent to ensure required performance. Any small variation in the specifications will have significant impact on signal integrity and affect the performance. This means that the total insertion loss, ISI, non-ISI jitter in the entire interconnect should be improved.IC package plays a key role in signal integrity of the high-speed signal and there is a need to have low loss channel. Standards like PCIe have a loss requirement of 4 dB combining silicon and package, in case of non-root complex. Recent developments suggest new design trends for multi-chiplets in a single package with increasing package sizes, which can make it extremely difficult to predict insertion loss specifications. Conductivity, dielectric properties, and loss tangent drives the overall loss per unit length and the current low-loss materials have insertion loss of around 1 dB per 10 mm. While many advances have been reported in the literature, scope for improvement exists and conventional approaches of lowering DF of dielectric material or reducing the surface roughness of Copper have helped but are not adequate for the demands of high-speed interconnects. This paper proposes a novel approach by using hybrid Copper-Graphene package interconnects, which helps in reducing signal losses and improves the overall performance of the system.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131139012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IC Package with the system board Interconnects - simulation showing PDN noise due to simultaneous switching IOs and its effect on Signal Integrity 带有系统板互连的IC封装-模拟显示了由于同时切换IOs而产生的PDN噪声及其对信号完整性的影响
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9994903
Rajesh Badala Jagadeesh, Venkatesh Ramashastry, Bharath Ramprasad, Surya Prakash Rao Bengaluru Srihari, Satvik Bhat, Vignesh Sunku Radhakrishna
{"title":"IC Package with the system board Interconnects - simulation showing PDN noise due to simultaneous switching IOs and its effect on Signal Integrity","authors":"Rajesh Badala Jagadeesh, Venkatesh Ramashastry, Bharath Ramprasad, Surya Prakash Rao Bengaluru Srihari, Satvik Bhat, Vignesh Sunku Radhakrishna","doi":"10.1109/EDAPS56906.2022.9994903","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9994903","url":null,"abstract":"The analysis of package design with the PCB interconnects presented here shows the benefit of signal and power integrity co-simulations with power aware approach to mitigate the signal degradation that are caused by non-ideal behavior of the power distribution network and the simultaneous switching I/Os.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125023023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Power Integrity and Enablement Challenges for Integrated Dual-Mode Linear Voltage Regulator in Next Generation Intel® Core Microprocessor 下一代Intel®Core微处理器集成双模线性稳压器的电源完整性和实现挑战
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9995454
Deeksha Rawat, Chilla Venugopal Reddy, Vishal Gupta, Gaurav Singh
{"title":"Power Integrity and Enablement Challenges for Integrated Dual-Mode Linear Voltage Regulator in Next Generation Intel® Core Microprocessor","authors":"Deeksha Rawat, Chilla Venugopal Reddy, Vishal Gupta, Gaurav Singh","doi":"10.1109/EDAPS56906.2022.9995454","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9995454","url":null,"abstract":"A dual mode digital power gate (PG) and linear low drop-out regulator (LDO) is implemented on Intel® next generation™ microprocessor to enable different IPs on the SoC to operate at their minimal voltage levels. This paper discusses post silicon debug and validation techniques to characterize an integrated dual-mode voltage regulator. Performance metrics such as mode transition, power saving, circuit stability and voltage droop are measured and established in this work. These techniques in general can be applied to an integrated linear voltage regulator. The regulated modes are used when load current or ∂i/∂t is low thus allowing better power management in deeper package core states. Measurement shows 11% power saving in the allocated power budget in PKGC10 when voltage regulator is enabled to regulate at 0.7volt output.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"412 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121004856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Artificial Intelligence based advanced Signal Integrity prediction 基于人工智能的先进信号完整性预测
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9995470
Prerna, Nithya Ramalingam, Zaman Zaid Mulla, Archana Ganeshan, Ranjul Balakrishnan, Anoop Karunan
{"title":"Artificial Intelligence based advanced Signal Integrity prediction","authors":"Prerna, Nithya Ramalingam, Zaman Zaid Mulla, Archana Ganeshan, Ranjul Balakrishnan, Anoop Karunan","doi":"10.1109/EDAPS56906.2022.9995470","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9995470","url":null,"abstract":"As the signaling speeds continue to increase, maintaining Signal Integrity (SI) for the complete customer design space is a huge challenge. These constraints, along with the limitations of traditional methods of design space inclusion and channel behavior prediction pose significant risk to system design. Specific focus is needed on design space utilization techniques used for factoring in platform variability. Interfaces like PCIe Gen5/Gen6/Gen4 etc. exhibit higher order behaviors that can’t be modelled by current prediction algorithm like Response Surface Method (RSM). This leads to inaccurate system behavior understanding and results in unreliable platform design recommendations. To minimize design risk and achieve highly reliable scaling of Platform Design Guide (PDG) solution, this paper discusses the implementation of an Artificial Intelligence (AI) based methodology to cover complete design space and predict higher order system behaviors with high accuracy. Current SI method involves RSM type Design of Experiments (DOE) creation and results prediction using second order RSM as shown in Fig. 2(a). It has limitations since RSM uses only three variable levels therefore doesn’t cover the entire design space. It can only model up to second order system behavior. These issues can be addressed using proposed AI based methodology shown in Fig. 2(b). These AI techniques have been encapsulated into an AI based tool called Fitpro which fully automates space filled DOE creation and SI results prediction. Fitpro significantly reduces manual interventions and positively impacts efficiency.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129137108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Channel Impedance Optimization For 100 Gbps High-Speed Networking Interfaces 100gbps高速网络接口的通道阻抗优化
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9994920
Chu Paul, Lin Eva, James Chen, Liao Chun-Lin, Bandi Sathvika, Mallikarjun Vasa, B. Mutnury
{"title":"Channel Impedance Optimization For 100 Gbps High-Speed Networking Interfaces","authors":"Chu Paul, Lin Eva, James Chen, Liao Chun-Lin, Bandi Sathvika, Mallikarjun Vasa, B. Mutnury","doi":"10.1109/EDAPS56906.2022.9994920","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9994920","url":null,"abstract":"High-speed designs today have multiple high-speed interfaces, and these interfaces have different impedance requirements in the same system. For example: PCIe interface is designed for 85 ohms whereas Gigabit ethernet is designed for 100 ohms. Sometimes due to stack-up cross-sectional restrictions and fixed dielectric constant of the material, it is not easy to meet all characteristic impedance requirements in the design. Design trade-off needs to be performed to analyze which interface is sensitive to impedance variations. With signal speeds going above 100 Gbps, pulse amplitude modulation-4 (PAM4) has become more common and PAM4 signaling is more sensitive to impedance variations due to low signal-to-noise ratio (SNR).In this paper, the impact of channel impedance on 100 Gbps ethernet (802.3ck) interface is analyzed using time-domain and frequency domain analysis. Channel operating margin (COM) analysis is performed for various channel impedances on an 802.3ck-CR topology. It Is found that huge impedance mismatch between the trace breakout and channel impacts channel performance adversely.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126847210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Methodology to Optimize the Number and Placement of Decoupling Capacitors in a Multilevel Power Delivery Network 多电平供电网络中去耦电容数量和位置的优化方法
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9995085
R. Krishna, Thong Nguyen, Atom O. Watanabe, D. Becker, Arvind Kumar, E. Rosenbaum
{"title":"A Methodology to Optimize the Number and Placement of Decoupling Capacitors in a Multilevel Power Delivery Network","authors":"R. Krishna, Thong Nguyen, Atom O. Watanabe, D. Becker, Arvind Kumar, E. Rosenbaum","doi":"10.1109/EDAPS56906.2022.9995085","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9995085","url":null,"abstract":"It is increasingly challenging to satisfy the requirements placed on the power delivery network for a multilevel hierarchical system, due to aggressive voltage scaling and stringent limits on the chip-level voltage droop. This paper presents a methodology to obtain the minimal number of decoupling capacitors for a 4-level hierarchical system to meet the on-chip voltage droop constraints and to optimize the location of those decoupling capacitors to meet a user-specified target impedance. The number and location optimizations are performed using nature-based and Bayesian optimization algorithms along with the quantitative comparison of results.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134499599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Dual-Band Compact Antenna Array with Scattering Suppression Capability in Low Band 具有低频段散射抑制能力的双频紧凑型天线阵列
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9994853
Shiyu Sun, Hong-li Peng, Hongan Zhou, Qingmian Wan
{"title":"A Dual-Band Compact Antenna Array with Scattering Suppression Capability in Low Band","authors":"Shiyu Sun, Hong-li Peng, Hongan Zhou, Qingmian Wan","doi":"10.1109/EDAPS56906.2022.9994853","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9994853","url":null,"abstract":"A new compact antenna with scattering suppression effects and operating in low band (LB) of 1.71 to 2.21 GHz is presented in this paper. Thanks to the effects, four very small-distance antennas operated in high band (HB, 3.3–3.6 GHz) are successfully interleaved with above one LB antenna, enabling our new dual-band compact antenna solutions..Simulated results shown that the antenna, with higher than 10dB of return loss in both band and 6.5dB/9.5dB of realized gain in LB/HB, has very promising for 5G applications.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121826616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ENRZ vs. NRZ: A Performance Comparison at 112 Gbps ENRZ与NRZ: 112 Gbps下的性能比较
2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS) Pub Date : 2022-12-12 DOI: 10.1109/EDAPS56906.2022.9995425
S. Chen, F. de Paulis
{"title":"ENRZ vs. NRZ: A Performance Comparison at 112 Gbps","authors":"S. Chen, F. de Paulis","doi":"10.1109/EDAPS56906.2022.9995425","DOIUrl":"https://doi.org/10.1109/EDAPS56906.2022.9995425","url":null,"abstract":"The performances of Non-Return-to-Zero (NRZ) and Ensemble Non-Return-to-Zero (ENRZ) at the throughput of 112 Gbps per pair (224 Gbps for an ENRZ channel), with three channels of different levels of losses, are investigated. The Frequency Domain Matrix Multiplication (FDMM) channel simulation method is introduced and applied. The simulation results show that ENRZ has a remarkable advantage in terms of channel loss, which becomes more pronounced as channel loss increases. While it might still be challenging for ENRZ to support a full-length backplane at 224 Gbps per Chord™, its supportable range should be significantly larger than NRZ.","PeriodicalId":401014,"journal":{"name":"2022 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123258157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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