A New Current Crowding Phenomenon for Flip-Chip-on-Leadframe (FCOL) Package and its Impact on Electromigration Reliability

Sylvester Ankamah-Kusi, Koduri K. Sreenivasan, R. Murugan
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Abstract

Electromigration (EM) is a critical problem for interconnect reliability of modern integrated circuits (ICs) packages. In flip-chip-on-leadframe (FCOL) package, a new current crowding phenomenon at the solder joints interface is observed that exacerbates the maximum current density. To address this recent phenomenon, in this work, we detail the mechanisms of the electric current paths that lead to a potential adjustment of the average current density parameter in the current Black’s mean time to failure (MTTF) mathematical model. An appropriate design-of-experiment (DOE) for the FCOL package is developed. Through extensive simulation via a 3D quasi-static solver, the potential impact of this new phenomenon is assessed and quantified. A 35% increase in maximum current density was observed under the worst-case condition. Implications of the findings for future high-density microelectronic is under investigation experimentally.
引线框架倒装芯片(FCOL)封装中一种新的电流拥挤现象及其对电迁移可靠性的影响
电迁移是影响现代集成电路封装互连可靠性的关键问题。在引线框架倒装芯片(FCOL)封装中,在焊点界面处观察到一种新的电流拥挤现象,该现象加剧了最大电流密度。为了解决这一最近的现象,在这项工作中,我们详细介绍了电流路径的机制,这些路径导致电流布莱克的平均失效时间(MTTF)数学模型中平均电流密度参数的电位调整。提出了一种适合于FCOL封装的实验设计(DOE)。通过三维准静态求解器的广泛模拟,评估和量化了这种新现象的潜在影响。在最坏情况下,最大电流密度增加了35%。这些发现对未来高密度微电子的意义正在实验研究中。
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