IEEE Transactions on Parts, Hybrids, and Packaging最新文献

筛选
英文 中文
Electrical Characteristics of a Two-Level Single Ground-Plane Interconnection in Josephson Tunneling Logic 约瑟夫森隧道逻辑中两电平单地平面互连的电特性
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135139
Ying L. Yao
{"title":"Electrical Characteristics of a Two-Level Single Ground-Plane Interconnection in Josephson Tunneling Logic","authors":"Ying L. Yao","doi":"10.1109/TPHP.1976.1135139","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135139","url":null,"abstract":"The electrical characteristics of a two-level X-Y superconducting stripline network over a common superconducting ground plane have been examined as a possible means of two-dimensional interconnection for Josephson tunneling logic (JTL) [1]. Despite the crossover structure, each superconducting stripline has a unique characteristic impedance and is suitable for transmission of very high-speed Josephson tunneling-logic signals. Special test vehicles were fabricated with 1-mit linewidth technology [2] to study line delay and crosstalks.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130035777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Calculation of the Thermal Resistance of a Conducting and Convecting Surface 导体和对流表面热阻的理论计算
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135130
G. Ellison
{"title":"Theoretical Calculation of the Thermal Resistance of a Conducting and Convecting Surface","authors":"G. Ellison","doi":"10.1109/TPHP.1976.1135130","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135130","url":null,"abstract":"A closed-form theoretical expression has been derived for the conductive and convective thermal resistance of frequently used electronic component and package covers. Numerical results are plotted in a manner that is applicable to a variety of devices such as flat packs, dual-in-line packages, and ceramic circuit cards,","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124096252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
New Type Thermal Printing Head Using Thin Film 新型薄膜热敏打印头
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135137
S. Shibata, K. Murasugi, K. Kaminishi
{"title":"New Type Thermal Printing Head Using Thin Film","authors":"S. Shibata, K. Murasugi, K. Kaminishi","doi":"10.1109/TPHP.1976.1135137","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135137","url":null,"abstract":"This paper describes the development of a new type thermal printing head. The main features of this paper are as follows. 1) The heating element is a Ta 2 N thin-film resistor coated with a SiO 2 -Ta 2 O 5 double layer. The SiO 2 layer prevents oxidation of Ta 2 N; the Ta 2 O 5 layer, which rubs directly against the heat-sensitive paper, is hard enough to resist abrasion. 2) A theoretical calculation revealed that the thermal time constant can be controlled by changing the thickness of the heat insulating layer. It was found that a glazed alumina ceramic substrate has the most suitable thermal properties. 3) A beam-lead diode array and a crossover structure have been developed to satisfy the electrical interface requirements of both the thermal printing head and the external logic.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114665713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Hybrid Protective Device for MOS-LSI Chips MOS-LSI芯片混合保护装置
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135132
F. D. L. Moneda, David E. DeBar, K. Stuby, C. Bertin
{"title":"Hybrid Protective Device for MOS-LSI Chips","authors":"F. D. L. Moneda, David E. DeBar, K. Stuby, C. Bertin","doi":"10.1109/TPHP.1976.1135132","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135132","url":null,"abstract":"In this paper, several structures that can be used to protect MOS-LSl chips against electrostatic discharges (ESD) are examined experimentally to determine some of the possible specification tradeoffs that result in improved overall performance. It is shown that by using structures able to withstand larger energy discharges at the expense of their voltage-clamping characteristics, higher overvoltages can be handled. Additional protection is possible by incorporating a spark-gap device on the chip-carrying module. Conditions under which this hybrid combination is effective are ex- amined.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127044810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A Solid-State Variable Resistor Using a Junction FET 使用结场效应管的固态可变电阻
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135131
E. Sugita, T. Yasuda, T. Matsumoto
{"title":"A Solid-State Variable Resistor Using a Junction FET","authors":"E. Sugita, T. Yasuda, T. Matsumoto","doi":"10.1109/TPHP.1976.1135131","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135131","url":null,"abstract":"A noncontact variable resistor having fast response and small nonlinear distortion is needed for applications such as autoattenuators or autoequalizers. For these purposes, the voltage controlled variable resistor (VCR) based on the junction FET was investigated. This paper describes the-design results achieved by a VCR and also discusses the behavior of this device with regard to nonlinear distortion and aging characteristics. S/D 2 and S/D 3 (S: signal level; D 2 , D 3 : second and third harmonics level) were over 70 dB in the resistance region of 40-600 Omega and were improved by 10-30 dB, compared with the conventional FET. Resistance aging is less than 1 percent at 100°C after 1000 h.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133858833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Moisture, Myths, and Microcircuits 湿度,神话和微电路
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135142
R. Thomas
{"title":"Moisture, Myths, and Microcircuits","authors":"R. Thomas","doi":"10.1109/TPHP.1976.1135142","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135142","url":null,"abstract":"The development and use of an accurate method for the measurement of moisture in microelectronic packages has uncovered many myths related to the assembly and processing of microcircuit packages. The myths indicated a general lack of awareness on the part of the manufacturer and user of the basic physics and chemistry of moisture adsorption, desorption, and leak mechanisms. This paper describes the mass spectrometer method developed to measure moisture in electronic packages, and experiments conducted to disprove myths associated with moisture trapped within the hermetically sealed cavity.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116784370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
Bias-Humidity Performance of Encapsulated and Unencapsulated Ti-Pd-Au Thin-Film Conductors in an Environment Contaminated with Cl 2 封装和未封装Ti-Pd-Au薄膜导体在Cl 2污染环境中的偏湿性能
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135141
N. Sbar
{"title":"Bias-Humidity Performance of Encapsulated and Unencapsulated Ti-Pd-Au Thin-Film Conductors in an Environment Contaminated with Cl 2","authors":"N. Sbar","doi":"10.1109/TPHP.1976.1135141","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135141","url":null,"abstract":"Both encapsulated and unencapsulated Ti-Pd-Au thin-film conductors on AI 2 O 3 substrates were biased in an 85°C 80-percent RH environment contaminated with Cl 2 . The encapsulant was an RTV silicone rubber. During exposure to the corrosive environment, leakage currents between adjacent conductors were periodically measured and recorded. Leakage currents for the unencapsulated specimens increased with time, and many were shorted after approximately 400 h. In contrast to this behavior, there were no increases in leakage currents for the silicone rubber encapsulated conductors. At the end of the test, selected specimens were examined using a light microscope and an SEM with X-ray capability. No metal migration was observed on the encapsulated samples. The unencapsulated conductors showed dendritic growth between the electrodes; X-ray analysis showed the growths to consist of both Au and Pd. It is concluded that the RTV silicone encapsulant effectively prevents high leakage currents and subsequent metal migration on biased Ti-Pd-Au conductor specimens exposed to a moist Cl 2 environment. Unencapsulated samples are rapidly degraded under the same conditions with the main failure mechanism being metal migration.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127890629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
The Mechanics of Gold Beam Leads During Thermocompression Bonding 热压缩键合过程中金束引线的力学
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135140
J. Dais
{"title":"The Mechanics of Gold Beam Leads During Thermocompression Bonding","authors":"J. Dais","doi":"10.1109/TPHP.1976.1135140","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135140","url":null,"abstract":"An analysis of the stress and deformation in gold beam leads during thermocompression bonding is presented. The analysis isolates two particular bonding processes for study. One has the beams on opposite sides of the chip bonded simultaneously and the other sequentially. Since strains are encountered that are two orders of magnitude greater than the elastic limit, the beam leads are modelled as a work-hardening rigid-plastic material. The independent variables are yield strength, plastic modulus, beam dimensions, chip length, and chip rise (or, bugging height). The dependent variables include strain, beam-centerline geometry, and the force and moment transmitted to the chip. A parametric variation is performed, which shows that increases in yield stress will significantly increase the maximum transmitted force and moment. Increasing beam thickness significantly increases the transmitted force and moment as well as the maximum compressive and tensile strains. Increasing the beam length or decreasing the chip rise will significantly decrease the maximum strains. The results are of interest in the analysis of device damage which occurs during the bonding process. Furthermore, the solution for the beam configuration will be useful in elastic and plastic analyses of power and thermal cycling problems involving goldbeam-lead devices.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117244520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Electron-Beam-Induced Currents in Simple Device Structures 简单器件结构中的电子束感应电流
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135138
K. Galloway, K. Leedy, W. Keery
{"title":"Electron-Beam-Induced Currents in Simple Device Structures","authors":"K. Galloway, K. Leedy, W. Keery","doi":"10.1109/TPHP.1976.1135138","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135138","url":null,"abstract":"Electron-beam-induced current (EBIC) in semiconductor devices produced by the electron beam of a scanning electron microscope (SEM) can be used to image sub-surface device features and to measure certain material parameters, This paper presents a simple method of calculation for estimating the magnitude of EBIC signals. EBIC signals from silicon p-n junction diodes are compared with the results of the calculation, The application of EBIC to more complicated device structures is discussed.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"324 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115760305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Evidence of mechanical Film Breakdown and ESCA Analysis of a Film on Thermally Aged Cobalt Hardened Gold 热时效钴硬化金的机械膜击穿证据及ESCA分析
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135129
J. Thomas
{"title":"Evidence of mechanical Film Breakdown and ESCA Analysis of a Film on Thermally Aged Cobalt Hardened Gold","authors":"J. Thomas","doi":"10.1109/TPHP.1976.1135129","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135129","url":null,"abstract":"Electron spectroscopy for chemical analysis (ESCA) has been used to determine the chemical formulation of thermally grown films on cobalt hardened-gold electroplate (150°C/8000 h). K2S04 (or SO3) ~ 60-A, thickness has been identified overlaying a 50-A-thick CoO layer on cobalt hardened gold. It was found that the dielectric breakdown voltage of this complex film depends on contact force. At Iow contact forces (~10-2N), electronic (as opposed to thermal) dielectric breakdown events are observed at a critical voltage of ~ 3.5 V. I-V characteristics are typically nonohmic. Mechanical film breakdown is evidenced by ohmic I-V characteristics. A statistically important number of mechanical breakthrough events are observed at 0.2-N contact force.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134448576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信