Bias-Humidity Performance of Encapsulated and Unencapsulated Ti-Pd-Au Thin-Film Conductors in an Environment Contaminated with Cl 2

N. Sbar
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引用次数: 31

Abstract

Both encapsulated and unencapsulated Ti-Pd-Au thin-film conductors on AI 2 O 3 substrates were biased in an 85°C 80-percent RH environment contaminated with Cl 2 . The encapsulant was an RTV silicone rubber. During exposure to the corrosive environment, leakage currents between adjacent conductors were periodically measured and recorded. Leakage currents for the unencapsulated specimens increased with time, and many were shorted after approximately 400 h. In contrast to this behavior, there were no increases in leakage currents for the silicone rubber encapsulated conductors. At the end of the test, selected specimens were examined using a light microscope and an SEM with X-ray capability. No metal migration was observed on the encapsulated samples. The unencapsulated conductors showed dendritic growth between the electrodes; X-ray analysis showed the growths to consist of both Au and Pd. It is concluded that the RTV silicone encapsulant effectively prevents high leakage currents and subsequent metal migration on biased Ti-Pd-Au conductor specimens exposed to a moist Cl 2 environment. Unencapsulated samples are rapidly degraded under the same conditions with the main failure mechanism being metal migration.
封装和未封装Ti-Pd-Au薄膜导体在Cl 2污染环境中的偏湿性能
将封装和未封装的Ti-Pd-Au薄膜导体置于受Cl 2污染的85°C 80% RH环境中进行偏置。密封剂是RTV硅橡胶。在暴露于腐蚀环境中,定期测量和记录相邻导体之间的泄漏电流。未封装导体的泄漏电流随着时间的推移而增加,其中许多在大约400小时后短路。与此相反,硅橡胶封装导体的泄漏电流没有增加。在测试结束时,使用光学显微镜和具有x射线能力的扫描电镜检查选定的样品。未观察到金属在封装样品上的迁移。未封装导体在电极间呈现枝晶生长;x射线分析显示,生长物由Au和Pd组成。结果表明,RTV硅酮封装剂可以有效地防止暴露在潮湿的Cl - 2环境中的偏置Ti-Pd-Au导体试样上的高泄漏电流和随后的金属迁移。在相同的条件下,未封装的样品会迅速降解,主要破坏机制是金属迁移。
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