IEEE Transactions on Parts, Hybrids, and Packaging最新文献

筛选
英文 中文
A Study of the Reliability of Microwave Transistors 微波晶体管可靠性研究
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135222
D. Lacombe, R. Naster, J. Carroll
{"title":"A Study of the Reliability of Microwave Transistors","authors":"D. Lacombe, R. Naster, J. Carroll","doi":"10.1109/TPHP.1977.1135222","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135222","url":null,"abstract":"A series of RF operating life tests has been performed on microwave transistors with different metallization systems to evaluate failure mechanisms and compare the lifetimes expected from the devices. An initial series of high temperature CW tests indicated that aluminum metallized devices fail after 2000h at 225°C, primarily due to voids in the emitter fingers caused by electromigration. Gold metallized transistors were found to be capable of long life at very high temperatures (2000 h at 340°C). A series of long-term pulsed life tests was performed at near operational temperatures on the same devices. The results confirmed the lifetime prediction for the aluminum devices based on the CW tests, but the failure mechanisms were somewhat different. The devices failed due to an emitter-base shunting mechanism, another manifestation of electromigration. The refractory metal/gold metallized devices failed because of metal peeling, a process related problem.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115242848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Ultrasonic Welding Mechanism as Applied to Aluminum-and Gold-Wire Bonding in Microelectronics 超声焊接机理在微电子铝金线焊接中的应用
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135225
G. Harman, J. Albers
{"title":"The Ultrasonic Welding Mechanism as Applied to Aluminum-and Gold-Wire Bonding in Microelectronics","authors":"G. Harman, J. Albers","doi":"10.1109/TPHP.1977.1135225","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135225","url":null,"abstract":"This paper represents a review as well as an extension of previous work concerned with the mechanism of microelectronic ultrasonic welding for both aluminum and gold wires. A series of experiments was carried out to determine the mechanism of gold-to-gold ultrasonic bonding. These experiments, including lift-off pattern studies, clamped-wire studies, and bond deformation versus ultrasonic vibration amplitude studies, indicate that gold ultrasonic bonding takes place primarily by means of a deformation mechanism as opposed to a heating or sliding mechanism. This is substantially the same result previously obtained from studies on the aluminum ultrasonic bonding mechanism. Further, it is shown that a deformation mechanism also holds for other forms of solid phase microelectronic bonding. Specific examples are taken from electric discharge \"tweezer welds\" and from thermocompression bonds. The role of contaminant removal and certain reliability aspects of ultrasonic bonding are also discussed.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127536313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 180
High Temperature Properties of Solid Tantalum Chip Capacitors 固体钽片电容器的高温特性
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135230
D. Thompson, S. Gunnala
{"title":"High Temperature Properties of Solid Tantalum Chip Capacitors","authors":"D. Thompson, S. Gunnala","doi":"10.1109/TPHP.1977.1135230","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135230","url":null,"abstract":"The use of tantalum chip capacitors in conjunction with hybrid circuitry requires stable capacitor characteristics that will withstand the stresses of component attachment, testing, and circuit operations. A line of miniature tantalum chip capacitors is discussed with emphasis on materials, constructional methods, and resultant performance of the devices under environmental and operational conditions. Results of exposure to high temperature attachment conditions are presented with details of impedance and dissipation factor characteristics as well as other traditional capacitor parameters.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"87 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113983547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Film Capacitors with Low Internal Inductance 具有低内感的薄膜电容器
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135227
D. Loescher, N. Sidnell
{"title":"Film Capacitors with Low Internal Inductance","authors":"D. Loescher, N. Sidnell","doi":"10.1109/TPHP.1977.1135227","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135227","url":null,"abstract":"It is shown experimentally that the turns between tabs and the tab straps themselves are the major sources of internal inductance in a buried-foil capacitor with conventional flagged tabs. For example, two tab straps each 4 mm wide and 32 mm long contribute about 46 nH of inductance. A unique tab structure in which two conventional tabs were assembled and inserted as a low-inductance fiat cable and which largely eliminates the sources of internal inductance is described. An internal inductance of 3 to 7 nH was measured for a 0.4-µF capacitor with this tab structure whereas inductances of 34 to 56 nH were measured for similar capacitors with conventional tabs.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129447726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Spurious Signal Generation in Plastic Film Capacitors 塑料薄膜电容器中杂散信号的产生
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135228
J. W. Borough, J. Burnham, W. J. Simmons, S. L. Webster
{"title":"Spurious Signal Generation in Plastic Film Capacitors","authors":"J. W. Borough, J. Burnham, W. J. Simmons, S. L. Webster","doi":"10.1109/TPHP.1977.1135228","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135228","url":null,"abstract":"Plastic film capacitors with dielectric materials such as Mylar or polycarbonate have been observed to generate spurious signals which appear as small spikes in capacitor voltage in the range of 10-300 µV. Such transients repeat at intervals varying from fractions of a second to years, becoming more frequent during periods of temperature change. The tendency to produce this phenomenon can persist for the normal life of the capacitor? depending on thermal and electrical stresses encountered. The effect under study is not related to dielectric breakdown or corona discharge which are due to high electric stress. The observed transients can appear at the capacitor electrodes with either polarity during application of voltage as low as zero. The source of charge and energy for this phenomenon is dielectric absorption (DA) which is history dependant relating directly to the nature of the dielectric material. Materials with high DA such as Mylar are much more susceptible than \"nonpolar\" dielectrics such as polystyrene. The following considerations in minimizing generation of spurious signals are discussed: 1) selection of materials; 2) limitations on use conditions; 3) preconditioning or annealing; 4) capacitor screening techniques.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126636988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-Energy Solid-State Electrical Surge Arrestor 高能固态电避雷器
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135226
J. Lee, M. Cooper
{"title":"High-Energy Solid-State Electrical Surge Arrestor","authors":"J. Lee, M. Cooper","doi":"10.1109/TPHP.1977.1135226","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135226","url":null,"abstract":"In this paper an engineering model of a high-energy (20 ~ 40 C of charge, 15 ~ 35 kJ) solid-state electrical surge arrestor (ESA) is presented. The basic elements are commercial or custom-made metal oxide varistors (MOV). The approach to achieve a high-coulomb ESA is to use paralleled MOV's with efforts concentrated on ensuring uniform current partition by matching the MOV's conduction characteristics and using ballast resistors. The unit with custom-made large area MOV's survived consecutive 40-C surges of 5-ms exponential decay. The peak current was 6.5 kA at a clamping voltage of 1.1 kV. Design consideration, screening techniques, packaging, and test results are reported. A brief review of the MOV physics is also included.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133482766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Higher Q from Pot Core Inductors 高Q从锅芯电感
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135229
Fred J. Banzi
{"title":"Higher Q from Pot Core Inductors","authors":"Fred J. Banzi","doi":"10.1109/TPHP.1977.1135229","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135229","url":null,"abstract":"To obtain the maximum Q (quality factor) from a given inductor structure, the designer must employ his whole bag of design tools. When that inductor operates at several megahertz or more, the bag must often be turned inside out. This paper provides design techniques necessary to maximize inductor Q, with particular emphasis on higher frequency applications. Loss analysis (l/Q) calculations for magnetic core loss and winding losses are discussed. Such practical information as capacitive loss constants and actual measured wire diameters needed for loss calculations are included. How to use the calculations to determine the optimum wire type and size is shown. Optimization examples included are based on actual inductors using IEC 14/8 mm pot cores. The design of a particular ferrite pot core inductor operating in the 15-40-MHz range is outlined. Here the relationship between achieving a given inductance and maximizing Q is explored. Also discussed are special considerations of winding lead placement and hardware effects.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129710782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High Temperature Thermal Characteristics of Microelectronic Packages 微电子封装的高温热特性
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135232
Gene K. Baxter, J. Anslow
{"title":"High Temperature Thermal Characteristics of Microelectronic Packages","authors":"Gene K. Baxter, J. Anslow","doi":"10.1109/TPHP.1977.1135232","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135232","url":null,"abstract":"This paper describes results of the computer-analysis pottion of a research program which was conducted to study the thermal characteristics of microcircuits in high temperature environments. A special IC chip, bonded to an alumina chip carrier, was modeled for these simulations. It was found that thermal resistance values and thermal time constants nearly double when the chip carrier temperature is increased from 70 to 257°C. For a chip power dissipation of 1.5 W, the peak junction temperature increased from 138 to 385°C, an increase of 247°C, while the chip carrier only increased by 187°C. The thermal time constant of the junction peak temperature rise, measured relative to the chip carrier, increased from 15 to 26 µs over the same temperature range.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131251379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Ceramic-Chip-Capacitor Attachment Ceramic-Chip-Capacitor附件
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135231
M. Seeba, R. Sears
{"title":"Ceramic-Chip-Capacitor Attachment","authors":"M. Seeba, R. Sears","doi":"10.1109/TPHP.1977.1135231","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135231","url":null,"abstract":"Soldering of ceramic-chip capacitors to various kinds of circuit bearing substrates has been accepted ever since capacitors were first introduced to electronic circuit and packaging designers. The palladium-silver end-cap terminals normally Supplied were, in fact, advertised as being solderable with minimum leaching of silver into the solder. Upon a detailed investigation of a capacitor failure it was discovered that a crack had occurred under the end termination of a capacitor and, furthermore, that this crack could not be detected from the outside. Indeed, very careful cross sectioning was required, followed by equally careful microscopic examination. Further investigation led to the conclusion that the crack thus discovered was not an isolated instance of this phenomenon. This paper, and the experimental data it reports, will show that capacitor attachment to alumina substrates using solder causes the capacitors to crack, but that these cracks rarely result in complete electrical failure of the capacitor. The paper will also show that preheating the substrate to a specific temperature during the soldering operation will minimize the cracking phenomenon. While some inferences may be drawn as to the mechanism causing the cracking, the elucidation of this mechanism was not the purpose of the study to be reported here. The elimination of cracking by using conductive epoxy for attaching ceramic-chip capacitors to alumina substrates will be shown.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125538607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ZnO Varistors for Transient Protection 用于瞬态保护的氧化锌压敏电阻器
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135218
L. Levinson, H. Philipp
{"title":"ZnO Varistors for Transient Protection","authors":"L. Levinson, H. Philipp","doi":"10.1109/TPHP.1977.1135218","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135218","url":null,"abstract":"ZnO varistors are novel ceramic semiconductor devices used for protection of electronic equipment against transient overvoltages due to switching surges or lightning. This article describes the microstructure, circuit behavior, and operation of ZnO varistors. ZnO varistors have highly nonlinear current-voltage characteristics similar to back-to-back Zener diodes but with much greater current, voltage, and energy handling capability. These devices are capable of protecting circuits with operating voltages from ten to thousands of volts while passing surge currents in the kiloamp range. Varistor response time is too small to measure (less than 500 ps). ZnO varisters are comprised of an array of conducting ( Omega ·cm) ZnO grains, each grain being surrounded by an insulating oxide barrier 106V/cm) across the insulating barriers promote the tunneling of electrons through these intergranular barriers. The details of the varistor conduction mechanism are complex and a discussion is given of our present understanding of this process.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130679630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 74
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信