IEEE Transactions on Parts, Hybrids, and Packaging最新文献

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Glass-Passivated Thick-Film Capacitors for RC Circuits RC电路用玻璃钝化厚膜电容器
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135133
W. Bratschun
{"title":"Glass-Passivated Thick-Film Capacitors for RC Circuits","authors":"W. Bratschun","doi":"10.1109/TPHP.1976.1135133","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135133","url":null,"abstract":"The advantages, disadvantages, and the reasons for the limited usage of thick-film capacitors are discussed. The electrical and environmental properties of a glass-passivated high dielectric constant (HiK) (~1000) capacitor which does not require hermetic packaging are described. Design criteria for achieving a Iow-cost thick-film capacitor-resistor-conductor network are presented. These include: 1) satisfying multiple circuit requirements; 2) using many capacitors, resistors, and conductors per circuit or per processing operation; 3) using Iow-cost materials, sealing techniques, and processes; 4) achieving high yields. An example is cited of a television tuner circuit on a 2 X 3 X 0.040-in substrate utilizing 47 resistors, 30 capacitors, 8 crossovers, and 1 ground plane in which the substrate also serves as a printed,circuit board for mounted discrete components.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132635323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A New Center-Tapped Medium-Power Microfilm Resistor 一种新型中心抽头中功率微膜电阻
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135125
L. Bos, W. Ostrander, J. Verhoef
{"title":"A New Center-Tapped Medium-Power Microfilm Resistor","authors":"L. Bos, W. Ostrander, J. Verhoef","doi":"10.1109/TPHP.1976.1135125","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135125","url":null,"abstract":"A new center-tapped microresistor with high power density capability, good stability, and a high degree of inherent reliability is described. The resistor consists of a 0.075 in2chip 0.022 in thick with two equal-value sputtered tantalum nitride photoetched resistors. Gold-plated copper leads are thermal pulse bonded to evaporated chrome/gold bonding pads. The resistive film is protected with an epoxy coating. Performance data include 10 000 h life at 70°C with 0.2 and 0.4-W dissipation with resistance changes generally under 1 percent. This is equivalent to 70 W/in2of substrate area and up to 1300 W/in2of resistive area. Also included are 10 000 h of 150°C thermal aging, temperature cycle, moisture performance and short time overload, and hot-spot temperature rise versus power dissipated. With heat sinking, short time overload of up to 3 W was successfully applied. Tolerance as manufactured is ±5 percent and stability is generally equivalent to M I L 10509 characteristic C. The product design, manufacturing process, fabrication equipment, and process controls are described. Included are a continuous sputtering machine, an autobonder, an autotester, and a \"binstock\" qualification procedure. Two unusual applications are described. In one, pairs of center-tapped resistors are used as stripline attenuators or as stripline terminations. They are useful at frequencies up to approximately 2 GHz, In the second application, they are used in an ultrahigh-speed computer. All signal conductors are treated as transmission lines and terminated with the microresistor. The computer size is such that just under 500 000 resistors are required. Operation of this computer leads to interesting conclusions regarding field failure rate and require- ments.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131827558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design Considerations for High-Frequency Ceramic Chip Capacitors 高频陶瓷芯片电容器的设计注意事项
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135135
N. Coda, J. Selvaggi
{"title":"Design Considerations for High-Frequency Ceramic Chip Capacitors","authors":"N. Coda, J. Selvaggi","doi":"10.1109/TPHP.1976.1135135","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135135","url":null,"abstract":"The design of multilayer ceramic chip capacitors is generally very straightforward and simple. This design normally yields the Iow-frequency parameters such as capacitance, dissipation factor, and insulation resistance. As the frequency increases, however, the loss caused by the resistance of the electrodes can become significant, and the inductance of the electrodes can impair the effectiveness of the capacitors. In this paper the frequency dependence of the dissipation factor is developed for both conventional chip Capacitors and discoidal capacitors. Equivalent series inductance is also developed and generalizations made about it. Finally, some conclusions are arrived at concerning optimum or better designs for high-frequency use.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116056182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Encapsulation of Integrated Circuits Containing Beam Leaded Devices with a Silicone RTV Dispersion 含硅RTV色散导束器件的集成电路封装
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135126
D. Jaffe
{"title":"Encapsulation of Integrated Circuits Containing Beam Leaded Devices with a Silicone RTV Dispersion","authors":"D. Jaffe","doi":"10.1109/TPHP.1976.1135126","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135126","url":null,"abstract":"This paper reviews the results of a number of investigations which have been performed to evaluate the use of an RTV silicone rubber dispersion for the encapsulation (conformal coating) of integrated circuits containing beam leaded silicon integrated circuit (SIC) devices. The dispersion consists of approximately 67-percent xylene and 33-percent solids by weight. The investigations described include: 1 ) measurement techniques for and typical values of the properties of the as-received dispersion and of the material after curing; 2) the determination of the suitability of the dispersion to be applied to integrated circuits containing SlC's by a flowcoat technique, and of its capability to completely fill under SlC's after curing; and 3) the performance of encapsulated test specimens and circuits in some initial accelerated bias-humidity and temperature cycling tests. In addition, several other factors relevant to determining the suitability of the dispersion for particular circuit applications are briefly dis- cussed.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129417440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
A Switchable Active Filter Hybrid 一种可切换的混合有源滤波器
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135134
Michael Probstein
{"title":"A Switchable Active Filter Hybrid","authors":"Michael Probstein","doi":"10.1109/TPHP.1976.1135134","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135134","url":null,"abstract":"A unique active bandpass filter is described, which is capable of selecting any of 12 different frequencies as defined by a digital input. This device utilizes both thick- and thin-film technologies to their best advantages. Filtering is performed by a state variable active filter circuit designed around a custom linear integrated circuit (lC) and precisely matched components. Frequency selection is accomplished by a custom MOS device. Functional laser trimming of both thinand thick-film resistors is employed to adjust circuit characteristics to extremely tight tolerances. The finished device must be packaged to maintain a high level of frequency stability over a wide range of environments. Two different packaging techniques are presently being successfully employed. The first is a standard chip and wire technique and the second relies on devices which are prepackaged in small ceramic carriers. This circuit, whose size, weight, and cost were previously impractical in discrete form, is presently being produced in production volumes.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130963149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Miniaturized Aluminum Solid Electrolytic Capacitors Using a Highly Effective Surface Enlargement Technique 采用高效表面放大技术的小型化铝固体电解电容器
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135136
K. Hirata, T. Yamasaki
{"title":"Miniaturized Aluminum Solid Electrolytic Capacitors Using a Highly Effective Surface Enlargement Technique","authors":"K. Hirata, T. Yamasaki","doi":"10.1109/TPHP.1976.1135136","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135136","url":null,"abstract":"This paper describes a new method for increasing the anode area and hence the capacitance density of aluminum solid electrolytic capacitors. Frequency, temperature, voltage, and life characteristics of the improved capacitors are pre- sented.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132046210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
How Heat Treatment Affects Film Foil Capacitors 热处理如何影响薄膜电容器
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-09-01 DOI: 10.1109/TPHP.1976.1135128
D. Loescher, C. E. Gumley
{"title":"How Heat Treatment Affects Film Foil Capacitors","authors":"D. Loescher, C. E. Gumley","doi":"10.1109/TPHP.1976.1135128","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135128","url":null,"abstract":"The effects of heat treatment between 74°C and 130°C on the dc breakdown voltage (V B ) and the change of capacitance with temperature have been determined for capacitors with Mylar film insulation. Some effects of the temperature of heat treatment on discharge life and on the rate of water desorption from rolled capacitors were also determined. It was found that the breakdown voltage decreased from 11.5 kV dc for 0.4-/µF capacitors with 50.8 µm of insulation processed at 74°C to 9.9 kV for similar units processed at 130°C. The change in capacitance associated with a temperature change from -55°C to 74°C was 8.5 percent for the units processed at 74°C and 6.5 percent for units processed at 130°C. Evidence of burning at tabs and at random locations along the foils was found when capacitors heat-treated at 74°C were unrolled after failure in discharge tests. No similar evidence was seen in units processed at 100°C and subjected to the same tests. Finally, results from the water desorption studies show that drying of Mylar capacitors can be accomplished in 10 h or less at temperatures below 74°C. Hence the choice of temperature for processing must be based on a consideration of all requirements placed on a capacitor.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131099757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Statistical Interpretation of Meniscograph Solderability Tests 半月板可焊性试验的统计解释
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-06-01 DOI: 10.1109/TPHP.1976.1135115
J. Jellison, D. Johnson, F. Hosking
{"title":"Statistical Interpretation of Meniscograph Solderability Tests","authors":"J. Jellison, D. Johnson, F. Hosking","doi":"10.1109/TPHP.1976.1135115","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135115","url":null,"abstract":"As part of a thick-film characterization study, a solderability test-program was initiated utilizing the meniscograph. The meniscograph test measures the changes in wetting force as a function of time, and thus affords a description of the kinematics of the wetting phenomenon. Difficulty was encountered in the derivation of unique parameters which provide consistent statistical comparisons. As an alternate to selecting a time interval from the meniscograph trace as a measure of wetting rate or only qualitatively comparing traces, as some investigators have done, we have evaluated the approach of measuring the slope of the trace replotted so as to yield a straight line fit. A plot of the logarithm of a normalized wetting force versus time has generally afforded the best fit. To evaluate the analytical techniques, a large number of meniscograph tests were conducted employing copper, nickel, and Kovar substrates using both tin-lead and lead-indium solders; and rosin flux with varying activity. With the wetting rate estimated on the basis of the logarithmic line fit, the tests have consistently ranked solder systems with regard to substrate solderability and the activity of fluxes. Calculated equilibrium contact angles were found useful in interpreting the meniscograph traces.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128948570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Observations of Extreme Cases of Contact Activation 接触激活的极端案例观察
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-06-01 DOI: 10.1109/TPHP.1976.1135109
E. Gray
{"title":"Observations of Extreme Cases of Contact Activation","authors":"E. Gray","doi":"10.1109/TPHP.1976.1135109","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135109","url":null,"abstract":"The process of contact activation or arc duration enhancement has been observed between various precious and nonprecious metals in highly activated (2 X 10-3- 100 torr) organic vapor-air mixtures. The results suggest that the enhanced arc durations observed under field, and some laboratory conditions, may only be an early stage of contact activation. A condition of extreme activation occurs where the duration of the enhanced arcing may be considerably reduced, and the voltage-time curves of contact opening show an almost continuous transition from zero potential to the open circuit voltage. At this stage the contacts are observed to have large amounts of carbonaceous particles present on them. This phenomenon of arc duration reduction under extreme activating conditions has been tentatively explained by considering a carbon particle bridging process between the electrodes.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131979774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
The Heat Sink Effect of Printed Conductors 印刷导体的热沉效应
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-06-01 DOI: 10.1109/TPHP.1976.1135113
F. Wenthen
{"title":"The Heat Sink Effect of Printed Conductors","authors":"F. Wenthen","doi":"10.1109/TPHP.1976.1135113","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135113","url":null,"abstract":"The conductors on a printed wiring board can play a significant role in removing heat from electrical components. This paper describes a method of estimating the impact such conductors have on component temperatures. It provides a series of equations and charts for estimating the thermal resistance from one end of a conductor, through the major heat paths to the ambient. The analysis accounts for the effects of temperature gradients within the conductor and within the board. Curves of thermal resistance for typical printed wiring board conductors in a natural convection environment are given. An example problem is also given and the result, using the charts, is compared to the result obtained using a finite difference computer solution. Agreement from the two approaches is within 4 percent.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121787376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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