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IEEE Transactions on Parts, Hybrids, and Packaging最新文献

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TRAPATT's: High Power Devices for Wide Pulse and CW Microwave Applications 高功率器件用于宽脉冲和连续波微波应用
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135220
K. Gleason, E. Cohen, M. L. Bark
{"title":"TRAPATT's: High Power Devices for Wide Pulse and CW Microwave Applications","authors":"K. Gleason, E. Cohen, M. L. Bark","doi":"10.1109/TPHP.1977.1135220","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135220","url":null,"abstract":"Single large diameter ring structure TRAPATT diodes on diamond heat sinks have yielded power outputs of up to 63 W with 30-35-percent efficiency at 1.73 GHz when operated with 50-µs pulsewidths and at a 1-percent duty factor. CW power outputs of up to 8.3 W at 1.6 GHz have also been obtained. Microwave performance data, diode fabrication procedures, circuit techniques, and a failure analysis are reported.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"233 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123983802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reliability Study of Wire Bonds to Silver Plated Surfaces 镀银表面线键的可靠性研究
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135223
K. James
{"title":"Reliability Study of Wire Bonds to Silver Plated Surfaces","authors":"K. James","doi":"10.1109/TPHP.1977.1135223","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135223","url":null,"abstract":"The influence of temperature and environment on bond integrity was investigated for both aluminum ultrasonic and gold thermocompression wire bonds made to silver plate. Storage of aluminum-silver bonds at 85°C-8S-percent relative humidity (85/85) (no bias) resulted in progressive bond strength degradation and a shift in the primary failure mode from wire breaks to bond lifts. Degradation was attributed to massive aluminum corrosion. Bond degradation was not observed for the gold-silver system during storage at 85/85 (no bias) for 1500 h. In addition to humidity testing, gold-silver bonds were isothermally aged at 150, 250, 350, 450, and 540°C for a minimum of 10 min at each temperature to a maximum of 2000 h at 150°C, 1500 h at 250 and 350°C, 1000 h at 450°C, and 500 h at 540°C. Although rapid silver diffusion was observed in samples aged above 150°C, the system was determined to be mechanically reliable. An effective silver diffusion coefficient for the wire bond system was calculated from destructive wire pull data and was found to obey the equation","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116213090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Alternative Methods for Determining Chip Inductor Parameters 确定芯片电感器参数的备选方法
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135217
W. Mańka
{"title":"Alternative Methods for Determining Chip Inductor Parameters","authors":"W. Mańka","doi":"10.1109/TPHP.1977.1135217","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135217","url":null,"abstract":"For high density packaging applications, it is not sufficient to know only the inductance, Q, and dc resistance of a chip inductor. The self-resonant frequency, coupling coefficient, working voltage, and rated current are important parameters that must also be known to properly utilize these components. However, the small size and shielding of chip inductors make it difficult to determine these parameters by conventional means. This paper suggests possible alternative methods. The advantages; disadvantages, and precautions of the conventional and alternative methods for determining the self-resonant frequency, coupling coefficient, working voltage, and rated current are discussed and compared. It is intended that this paper will prove to be useful source of practical information to engineers, enabling them to utilize chip inductors and other magnetic components more effectively.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128769582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fuse Resistor Consisting of a Metallic Thin Film and a Polymerized Organic Film on a Substrate 由金属薄膜和基板上的聚合有机薄膜组成的熔丝电阻
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135233
K. Horiguchi, P. Ozawa
{"title":"Fuse Resistor Consisting of a Metallic Thin Film and a Polymerized Organic Film on a Substrate","authors":"K. Horiguchi, P. Ozawa","doi":"10.1109/TPHP.1977.1135233","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135233","url":null,"abstract":"A new type of fuse resistor has been made by the following method. A polymerized organic film is formed on a substtate by the plasma polymerization method. Then a Ni-Cr thin film is deposited by vacuum evaporation to form a crossover pattern. Resistors have been fabricated in the range 0.47-10 000 Omega , ¼ W, which exhibit uniform characteristics with respect to opening time. Fusing action occurs at relatively low temperatures by thermally induced changes in the organic film. This paper describes the opening characteristics as well as the normal resistor properties.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122519311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Studies of Second Breakdown in Silicon Diodes 硅二极管二次击穿的研究
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135224
A. Ward
{"title":"Studies of Second Breakdown in Silicon Diodes","authors":"A. Ward","doi":"10.1109/TPHP.1977.1135224","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135224","url":null,"abstract":"First and second breakdown in silicon diodes are studied with a one-dimensional computer program that includes both electronic and thermal processes. Extensive calculations of both static and dynamic current density-voltage characteristics are shown for temperatures from 300 to 600 K. The variations of first and second breakdown voltages with doping density and diode width are presented. Second breakdown voltages are shown to increase initially with temperature due to the decrease in avalanche coefficients and saturation velocities with increased temperature, and then to decrease as thermal injection from the high doping boundary regions drastically reduces the multiplication factor required to reach the breakdown current. It is shown how the temporal rate of temperature increase, as a function of current density, can be used to calculate both current-versus-time and voltage-versus-time curves from static characteristics at several temperatures. A limited comparison is made with experimental data and with other computations.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133492361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Low Loss Surface-Acoustic-Wave Filters 低损耗表面声波滤波器
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-12-01 DOI: 10.1109/TPHP.1977.1135221
B. Potter, C. Hartmann
{"title":"Low Loss Surface-Acoustic-Wave Filters","authors":"B. Potter, C. Hartmann","doi":"10.1109/TPHP.1977.1135221","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135221","url":null,"abstract":"For several years surface-acoustic-wave (SAW) devices have looked promising as future components for receiver front-end and intermediate frequency filters. However, high insertion loss and a time domain triple transit signal have limited the utilization of these devices. The low loss SAW filter overcomes both previous problems and is a milestone in electronic component development. Filters with loss as low as -0.6 dB at 35 MHz, -2.3 dB at 320 MHz, and -50 dB sidelobes are routinely constructed. This paper discusses surface-wave filters in general, and then specifically the design of low loss SAW filters.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133973114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Hybrid Microcircuitry for 300°C Operation 300°C操作的混合微电路
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-09-01 DOI: 10.1109/TPHP.1977.1135195
D. Palmer
{"title":"Hybrid Microcircuitry for 300°C Operation","authors":"D. Palmer","doi":"10.1109/TPHP.1977.1135195","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135195","url":null,"abstract":"Microelectronic instrumentation for geothermal well logging must operate in ambient temperatures up to 300°C for several hundred hours. This study involved an extensive survey of 25 to 300°C operation of resistors, capacitors, conductors, interconnections, and active devices. Three major selection criteria were: 1) part lifetime of at least 1000 h at 300°C; 2) minimum change in electrical parameters from 25 to 300°C; 3) availability to the common circuit builder (no one of a kind). Certain thick film resistors, capacitors, and conductors were found compatible with such high-temperature operation. In addition, reconstituted mica and aluminum solid electrolytic capacitors were found useful up to 300°C. Simple circuits for a geothermal temperature logging tool have been fabricated using these hybrid materials, components, and Si MOS and JFET devices. Oven tests show satisfactory stability from 25 to 300°C and at least 100-h circuit operation at 300°C.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123814519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Phase and Amplitude Tracking of Hybrid RF Components 混合射频元件的相位和幅度跟踪
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-09-01 DOI: 10.1109/TPHP.1977.1135199
T. Taylor, M. Williams
{"title":"Phase and Amplitude Tracking of Hybrid RF Components","authors":"T. Taylor, M. Williams","doi":"10.1109/TPHP.1977.1135199","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135199","url":null,"abstract":"A study of data taken on bandpass filters and power dividers produced by the Harris Electronic Systems Division hybrid lab resulted in data that show precise amplitude and phase tracking. This paper addresses the design and fabrication techniques used to develop these two types of hybrid components used in most multichannel receiver systems. Aids for the design of thin-film interdigital capacitors and spiral inductors are included as an Appendix.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"15 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113964640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corona Discharge--Electrostatic Method for Deposition of Powdered Passivation Glass on Semiconductor Devices 电晕放电——在半导体器件上沉积粉末钝化玻璃的静电方法
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-09-01 DOI: 10.1109/TPHP.1977.1135205
R. Comizzoli
{"title":"Corona Discharge--Electrostatic Method for Deposition of Powdered Passivation Glass on Semiconductor Devices","authors":"R. Comizzoli","doi":"10.1109/TPHP.1977.1135205","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135205","url":null,"abstract":"Selective deposition of powdered passivating glass on either insulating or conducting regions of a device wafer can be accomplished by first depositing ions from a corona discharge on the insulating regions of the device wafer and then immersing the wafer in an insulating liquid containing a charged suspension of the powdered glass. The method is fast (about 15 s per wafer) and both sides can be coated simultaneously. Advantages compared to other methods are listed. The wafer charging process and the glass deposition process are discussed in terms of the relevant process parameters. Thus far, the main application has been deposition of glass in the grooves of mesa-type thyristors and rectifiers.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115767662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal Fatigue Failure of Soft-Soldered Contacts to Silicon Power Transistors 硅功率晶体管软焊触点热疲劳失效研究
IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1977-09-01 DOI: 10.1109/TPHP.1977.1135203
Sung-Soo Kang, N. Zommer, D. Feucht, R. Heckel
{"title":"Thermal Fatigue Failure of Soft-Soldered Contacts to Silicon Power Transistors","authors":"Sung-Soo Kang, N. Zommer, D. Feucht, R. Heckel","doi":"10.1109/TPHP.1977.1135203","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135203","url":null,"abstract":"Scanning electron microscopy was employed to characterize the structure of the soft-soldered joints in Si power transistors (type 2N3055), which failed electrically during thermal cycling. Cracks were observed in the soldered joint of many failed devices. Crack propagation seems to be accelerated by the presence of voids in the joint region. The importance of the reactions between the Ni layers and Sn of the .solder also affects the long-term reliability of the devices. Fractographs obtained from the failed devices reveal ductile fracture of the soft solder as well as creep or fatigue failure of the solder at the elevated temperature. Based on the structural studies of both failed and uncycled devices, some possibilities for improving device performance are discussed.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128810192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
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