{"title":"高功率器件用于宽脉冲和连续波微波应用","authors":"K. Gleason, E. Cohen, M. L. Bark","doi":"10.1109/TPHP.1977.1135220","DOIUrl":null,"url":null,"abstract":"Single large diameter ring structure TRAPATT diodes on diamond heat sinks have yielded power outputs of up to 63 W with 30-35-percent efficiency at 1.73 GHz when operated with 50-µs pulsewidths and at a 1-percent duty factor. CW power outputs of up to 8.3 W at 1.6 GHz have also been obtained. Microwave performance data, diode fabrication procedures, circuit techniques, and a failure analysis are reported.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"233 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"TRAPATT's: High Power Devices for Wide Pulse and CW Microwave Applications\",\"authors\":\"K. Gleason, E. Cohen, M. L. Bark\",\"doi\":\"10.1109/TPHP.1977.1135220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single large diameter ring structure TRAPATT diodes on diamond heat sinks have yielded power outputs of up to 63 W with 30-35-percent efficiency at 1.73 GHz when operated with 50-µs pulsewidths and at a 1-percent duty factor. CW power outputs of up to 8.3 W at 1.6 GHz have also been obtained. Microwave performance data, diode fabrication procedures, circuit techniques, and a failure analysis are reported.\",\"PeriodicalId\":387212,\"journal\":{\"name\":\"IEEE Transactions on Parts, Hybrids, and Packaging\",\"volume\":\"233 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Parts, Hybrids, and Packaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TPHP.1977.1135220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Parts, Hybrids, and Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TPHP.1977.1135220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
TRAPATT's: High Power Devices for Wide Pulse and CW Microwave Applications
Single large diameter ring structure TRAPATT diodes on diamond heat sinks have yielded power outputs of up to 63 W with 30-35-percent efficiency at 1.73 GHz when operated with 50-µs pulsewidths and at a 1-percent duty factor. CW power outputs of up to 8.3 W at 1.6 GHz have also been obtained. Microwave performance data, diode fabrication procedures, circuit techniques, and a failure analysis are reported.