{"title":"硅功率晶体管软焊触点热疲劳失效研究","authors":"Sung-Soo Kang, N. Zommer, D. Feucht, R. Heckel","doi":"10.1109/TPHP.1977.1135203","DOIUrl":null,"url":null,"abstract":"Scanning electron microscopy was employed to characterize the structure of the soft-soldered joints in Si power transistors (type 2N3055), which failed electrically during thermal cycling. Cracks were observed in the soldered joint of many failed devices. Crack propagation seems to be accelerated by the presence of voids in the joint region. The importance of the reactions between the Ni layers and Sn of the .solder also affects the long-term reliability of the devices. Fractographs obtained from the failed devices reveal ductile fracture of the soft solder as well as creep or fatigue failure of the solder at the elevated temperature. Based on the structural studies of both failed and uncycled devices, some possibilities for improving device performance are discussed.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"Thermal Fatigue Failure of Soft-Soldered Contacts to Silicon Power Transistors\",\"authors\":\"Sung-Soo Kang, N. Zommer, D. Feucht, R. Heckel\",\"doi\":\"10.1109/TPHP.1977.1135203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Scanning electron microscopy was employed to characterize the structure of the soft-soldered joints in Si power transistors (type 2N3055), which failed electrically during thermal cycling. Cracks were observed in the soldered joint of many failed devices. Crack propagation seems to be accelerated by the presence of voids in the joint region. The importance of the reactions between the Ni layers and Sn of the .solder also affects the long-term reliability of the devices. Fractographs obtained from the failed devices reveal ductile fracture of the soft solder as well as creep or fatigue failure of the solder at the elevated temperature. Based on the structural studies of both failed and uncycled devices, some possibilities for improving device performance are discussed.\",\"PeriodicalId\":387212,\"journal\":{\"name\":\"IEEE Transactions on Parts, Hybrids, and Packaging\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Parts, Hybrids, and Packaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TPHP.1977.1135203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Parts, Hybrids, and Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TPHP.1977.1135203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal Fatigue Failure of Soft-Soldered Contacts to Silicon Power Transistors
Scanning electron microscopy was employed to characterize the structure of the soft-soldered joints in Si power transistors (type 2N3055), which failed electrically during thermal cycling. Cracks were observed in the soldered joint of many failed devices. Crack propagation seems to be accelerated by the presence of voids in the joint region. The importance of the reactions between the Ni layers and Sn of the .solder also affects the long-term reliability of the devices. Fractographs obtained from the failed devices reveal ductile fracture of the soft solder as well as creep or fatigue failure of the solder at the elevated temperature. Based on the structural studies of both failed and uncycled devices, some possibilities for improving device performance are discussed.