IEEE Transactions on Parts, Hybrids, and Packaging最新文献_第8页

Tantalum Thin-Film RC Circuit Technology for a Universal Active Filter 通用有源滤波器的钽薄膜RC电路技术

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135149

W. Worobey, J. Rutkiewicz

{"title":"Tantalum Thin-Film RC Circuit Technology for a Universal Active Filter","authors":"W. Worobey, J. Rutkiewicz","doi":"10.1109/TPHP.1976.1135149","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135149","url":null,"abstract":"This paper describes the physical layout, process sequence, and component properties of a universal active filter designated the standard tantalum active resonator (STAR). This active-filter building block was realized as a hybrid integrated circuit (HIC) using tantalum thin-film technology. Several different circuit configurations are possible using only one set of process photomasks and one HIC. This can be accomplished by a wide range of precise resistor values through the use of laser trimming and various interconnecting schemes for the components on the HIC via the printed wiring board. The STAR circuit is comprised of nine laser-adjustable tantalum thin-film resistors totalling a maximum of 1 M Omega , two 5100-pF tantalum capacitors, and one operational amplifier. The capacitors are formed by anodizing tantalum to 190 V and depositing NiCr-Pd-Au as the adherent counterelectrode. The resistors are made from 300- Omega / Box$^b$ tantalum oxynitride film which is preaged at 350°C for 1 h. The single-substrate RC process is amenable to batch processing and precision tuning, making it attractive for high-level production of precision filters. New thin-film design criteria and process developments permitted this circuit to be fabricated on a 16-pin dual-inline package ceramic substrate which could be packaged for machine insertion with commercially available insertion equipment.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126973667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Thin-Film Multilayer Capacitors Using Pyrolytically Deposited Silicon Dioxide 用热沉积二氧化硅制备薄膜多层电容器

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135154

R. Bailey, J. Nevin

引用次数: 5

The Hybrid Integration of a Multistage Active Bandpass Filter/Amplifier 多级有源带通滤波器/放大器的混合集成

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135145

K. Cook, D. Kerns, H. Nagle, T. Slagh, V. Ruwe

{"title":"The Hybrid Integration of a Multistage Active Bandpass Filter/Amplifier","authors":"K. Cook, D. Kerns, H. Nagle, T. Slagh, V. Ruwe","doi":"10.1109/TPHP.1976.1135145","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135145","url":null,"abstract":"This paper describes the fabrication, characterization, and analysis of a hybrid microcircuit to be used as a signal amplifier and conditioner for an IR tracking system. The entire circuit is integrated on a 1 X 2-in alumina substrate using thick-film resistors and conductors, some chip resistors in critical locations, chip capacitors, and monolithic integrated-circuit (IC) operational-amplifier (op-amp) chips. Fig. 1 shows a block diagram of the entire circuit. The transfer functions of each of the stages is derived. The predicted gain. peak and the shape of the measured bandpass agree well with experimental results. The computer simulation using an opamp \"macromodel\" [1] gives results very closely resembling the measured bandpass, and underscores the utility of computer circuit simulations in IC development. Stability and hybrid layout considerations are discussed. The noise figure is measured as a function of frequency for the given system source impedance of 5 M Omega and also for 0.5 M Omega to indicate the dependence of the noise figure on source resistance. The dominant sources of noise in the amplitier/filter and low-noise design considerations are discussed.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131534291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Prevention of Bridging Failure in Mercury Switches 水银开关桥接故障的预防

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135148

J. Bennett, M. V. D. Wielen, W. Asbell, M. Pinnel

引用次数: 3

Thin-Film Microwave Integrated Circuits 薄膜微波集成电路

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135162

V. Aramati, J. Bitler, A. Pfahnl, C. Shiflett

{"title":"Thin-Film Microwave Integrated Circuits","authors":"V. Aramati, J. Bitler, A. Pfahnl, C. Shiflett","doi":"10.1109/TPHP.1976.1135162","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135162","url":null,"abstract":"There has been an increase in the use of thin-film technology for the preparation of microwave circuits since it permits the realization of very complex circuitry with precision, reliability, and economy. The requirements for the realization of such circuits have made it necessary to extend the state of the art of the hybrid technology in many areas. Two new substrate types (fine-grain alumina and fused silica) and low-loss conductor systems that are both solderable and thermocompression (TC) bondable were introduced. Further complications which were overcome included bilevel patterns with laser-drilled plated via-holes, the control and measurement of the alumina substrates dielectric constant, and the use of laser trimming to adjust small geometries of tantalum nitride (Ta 2 N) termination resistors. Precise pattern delineation of conductors by laser machining, sputter etching, and selective plating was evaluated and the latter process was found to be the most economical and reliable, since the selective plating technique depends on good photoresist delineation, resist properties were evaluated with special attention given to the variation of linewidth as a function of exposure conditions and resist adhesion during the plating of the gold conductors to prevent underplating. The line shape of the resist was also determined as a function of exposure, development, mask-to-substrate distance, and postbake conditions. Linewidth tolerances such as ± 2.5 µm on fused silica and ±5.0 µm on alumina were routinely achieved. Microwave integrated circuits (an 18-GHz downconverter, a 1.7-GHz amplifier, a filter, and a demodulator) prepared by this technique are illustrated and their performances are discussed. These circuits are used in a digital transmission system currently under development.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133675493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A Technology of Thin-Film Hybrid Microwave Circuits 薄膜混合微波电路技术

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135161

J. Curran, R. Jeanes, H. Sewell

{"title":"A Technology of Thin-Film Hybrid Microwave Circuits","authors":"J. Curran, R. Jeanes, H. Sewell","doi":"10.1109/TPHP.1976.1135161","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135161","url":null,"abstract":"This paper describes the various thin-film processes that are being used to produce microwave integrated circuits, both microstrip and lumped element systems. The technologies described involve a combination of vacuum evaporation or RF sputtering, photolithographic, electrochemical, and microbonding processes used in sequence to achieve integrated resistor, capacitor, and conductor networks. Stable thin-film integrated nickel-chromium resistors are achieved with good microwave behavior. The usual conductor and interdigital capacitor systems are gold with either nickel-chromium or titanium underlay. The microwave circuits are produced on a variety of substrates which include alumina, ferrite, quartz, and sapphire. Some of the ancillary amplifier networks are produced on glass, A successful scheme for the fabrication of integrated anodized aluminium capacitor structures, compatible with the nickel-chromium/gold resistor conductor system, is outlined as well as preliminary results of such systems at GHz frequencies. Assembly techniques used for incorporating add-on components including chip capacitors, overlay couplers, chip resistors, and microwave semiconductor devices are included. Substrate preparation and the packaging of prototype assemblies are also included. Examples are shown of components and systems where the various technologies have been successfully applied. Data on the manufactured components are given, showing that good reliable performance can be achieved. While the processes are typically operated in the environment of a workshop for circuit development, they are adaptable for large-scale manufacture.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116369577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Foreword: Special Issue on Hybrid Microelectronics 前言:混合微电子学特刊

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135163

J. Degan, R. Colclaser, J. Sergent, L. Palkuti

引用次数: 0

The Effects of Gold and Nickel Plating Thicknesses on the Strength and Reliability of Thermocompress 镀金和镀镍厚度对热敷材料强度和可靠性的影响

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135158

N. Panousis, P. Hall

{"title":"The Effects of Gold and Nickel Plating Thicknesses on the Strength and Reliability of Thermocompress","authors":"N. Panousis, P. Hall","doi":"10.1109/TPHP.1976.1135158","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135158","url":null,"abstract":"External leads intended for thermocompression (TC) bonding to Au-metallized thin-film circuits are typically Cu-based alloys plated with Au or a combination of Ni and Au. The objective of this work was an evaluation of the Ni/Au system to determine the optimum plating thicknesses for reliable TC bonding. Also investigated was the minimum Au thickness necessary for TC bonding when the Ni diffusion barrier was omitted. Four criteria were evaluated: initial bondability; bond strength after accelerated aging; susceptibility to cracking in a 90° bend test; and fatigue behavior. The test vehicle was a 32-lead dual-in-line package utilizing alumina substrates metallized with Ti/Pd/Au films and Cu lead frames (CDA 102 and 110) electroplated with Ni and Au in the ranges of 0 - 41 µm and 0.4 - 20 µm, respectively (0 - 1630 and 15 - µin, respectively). Optimum strength and reliability with the Ni/Au system were obtained for a Ni plating thickness of 0.25 - 1.3 µm (10 -50 µin) and a minimum Au plating thickness of 2.5 µm (100 µin). For the special case of zero Ni thickness, acceptable TC bonds were obtained with as little as 0.6 µm (25 µin) of Au.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116574743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Computer-Aided Thermal Anlaysis of a Hybrid Mutlistage Active Bandpass Filter/Amplifier 混合多路有源带通滤波器/放大器的计算机辅助热分析

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135151

K. Cook, D. Kerns, H. Nagle, T. Slagh, V. Ruwe

引用次数: 7

The Case for Multichip LSI Packaging of High-Reliability Military Electronics 高可靠性军用电子产品的多芯片LSI封装案例

IEEE Transactions on Parts, Hybrids, and Packaging Pub Date : 1976-12-01 DOI: 10.1109/TPHP.1976.1135159

W. Farrand

引用次数: 0