Prevention of Bridging Failure in Mercury Switches

J. Bennett, M. V. D. Wielen, W. Asbell, M. Pinnel
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引用次数: 3

Abstract

Service failures of sealed mercury switches in relays may occur by "sticking" or by "bridging," Analyses by scanning-electron-microscope microprobe and by X-ray diffraction revealed that bridging failures in certain make,before-break-type switches can be due to the accumulation of particles of NiHg 4 in the mercury which, because of increased viscosity, may form a quasi-steady bridge between the movable and fixed contacts. Doping of the mercury with copper and tin was proposed as a solution to the bridging problem based on the analysis of failed switches and the knowledge gained from previous studies of liquid-mercury/solid-metal interactions [1]. The results of an accelerated laboratory test and a field trial comparing the electrical characteristics of undoped and doped switches confirm that the failure mechanism is thermally activated. The undoped switches were prone to bridging failure. Prevention of bridging failure in doped switches is attributed to the preferential formation Of a tin-bearing layer which inhibits the dissolution of nickel and the subsequent formation of a viscous slurry of NiHg 4 in mercury.
水银开关桥接故障的预防
继电器中密封汞开关的故障可能是由于“粘接”或“桥接”造成的,通过扫描电子显微镜显微探针和x射线衍射分析显示,某些断开前型开关的桥接故障可能是由于NiHg 4颗粒在汞中的积累,由于粘度增加,可能在活动触点和固定触点之间形成准稳定的桥接。基于对失效开关的分析以及从先前的液汞/固金属相互作用研究中获得的知识,提出了用铜和锡掺杂汞作为桥接问题的解决方案[1]。加速实验室试验和现场试验的结果比较了未掺杂和掺杂开关的电学特性,证实了失效机制是热激活的。未掺杂的开关容易发生桥接故障。在掺杂开关中防止桥接失效归因于优先形成的含锡层,该层抑制镍的溶解和随后在汞中形成的NiHg - 4粘性浆料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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