{"title":"A Test of Noble Metal Slip-Ring Alloys for Use in Inertial Guidance Platforms","authors":"S. Cole, B. Witherspoon, C. Reed, N. Lewis","doi":"10.1109/TPHP.1977.1135164","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135164","url":null,"abstract":"Lubricated slip-ring contact materials were life-tested in a nitrogen atmosphere and in a multichemical atmosphere that simulated the gases in an inertial guidance platform. The test mode was one that maximized the effects of debris accumulations and the generation of resistive films on infrequently wiped surfaces. The contacts that were lubricated with a four-ring polyphenyl ether had lower noise than ones lubricated with a blend of diester and chlorofiuorocarbon oils. The alloys grouped in decreasing order of performance as sliding contacts for inertial guidance platforms are as follows: Group I-ASTM B477; 4 Ni, Au; 1 Ni, Au electrodeposit; Group II-ASTM B541; 10 Cd, Au; Group III-54.5 Au, 37.5 Ag, 4 Cd, 4 In.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127941082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Treguier, N. Jemaa, D. Collobert, H. Prigent, J. Queffelec
{"title":"Electric and Spectroscopic Characterization of Arcing in Electrical Contacts: A Study of Erosion","authors":"J. Treguier, N. Jemaa, D. Collobert, H. Prigent, J. Queffelec","doi":"10.1109/TPHP.1977.1135178","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135178","url":null,"abstract":"Arcing in electrical contacts of telephone switching relays and the subsequent erosion have been the subject of a great deal of work. Nevertheless the problem depends on many parameters (the electrical circuit, environment, relay type, etc.) and knowledge is incomplete. The AgCu 90/10 contact used in the French CP 400 telephone switching system and, more particularly, the consequence of arcing in the current range 1-500 mA are the subject of this paper. Two methods are used to study arcing: measurement of the arc duration and analysis of the emission spectrum from the arc. The first results show that these two arc characterizations are related to erosion and that the variations with current are similar.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129891696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Anomalous Behavior of Reed Relays Under Accelerated Life-Test Conditions","authors":"J. Brady","doi":"10.1109/TPHP.1977.1135170","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135170","url":null,"abstract":"Experiments on reed relays are described which show that their performance during accelerated life tests (frequency of operation 5 Hz or greater) is a function of the rate at which the relays are operated and deteriorates at higher rates. The time for which the relays are left open between operations is critical in determining the bounce, vibration, and wear. At least 90 ms are required to avoid effects introduced by accelerating the tests. The results of tests using the longer off times show a marked improvement in performance under low-level conditions (0.1 V, l-mA resistive load) and a smaller improvement under high-level conditions (50 V, 50 mA with a resistor and 10-m cable load). An explanation is proposed in terms of the effects caused by closing reeds while the blades are still vibrating from the previous operation.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127009191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reliability of Clad Metal Inlays for Electrical Connectors","authors":"F. Lee","doi":"10.1109/TPHP.1977.1135171","DOIUrl":"https://doi.org/10.1109/TPHP.1977.1135171","url":null,"abstract":"Following the prior publication [ 1 ], we tested more connector hardware of clad metal inlays the quality of which is quite close to the production level. In other words, the spring base material was all made of beryllium copper fully heat-treated after forming. The springs were punched and formed with a production the spring gaps were more uniform and all within the specified range, though in the high end. The inlay materials used in this extended test were: a) 18K Au (75Au25Ag), b) pure palladium (100 Pd), c) Alloy 69Au25Ag6Pt, d) 60Pd40Ag alloy, and e) alloy-55(55Au39Ag3Cd31n). These materials were reported to have relatively better performance among the many candidates we initially studied. The sample size used in these tests was much larger than the previous one; as a result, the experimental data are more reliable and meaningful. Two groups of connector hardware representing today's highdensity miniature electronic packaging were used. One group was the cylinder-cylinder contact, the other was the cylinder-flat contact. Also some discussion was devoted to the dimple-flat contact system. The contact-resistance data were collected over a period of 6 months to 1 year from three kinds of environmental tests. Both porosity and formability were acceptable for all the inlay springs. No wear-through contacts were found after 50 insertions with lubricant applied on the Au or Pd plated pins. All five inlay materials tested behaved almost equally well in their contact-resistance measurements. Previously the 69Au25Ag6Pt was chosen as the best, and the palladium stood as the second best at that time. However, in this paper we have shown that the Pd is clearly the winner in many aspects of the tests. The 69Au25Ag6Pt is equivalent to the 75Au25Ag alloy as the second best choice.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129605943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal Comparison of Flip-Chip Relative to Chip-and-Wire Semiconductor Attachment in Hybrid Circuits: An Experimental Approach","authors":"D. Cavanaugh","doi":"10.1109/TPHP.1976.1135146","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135146","url":null,"abstract":"An important consideration for the hybrid-circuit manufacturer is the power dissipation of active devices on the circuit. Heat generated in the junctions of the devices affects circuit reliability, performance, and current handling capability. Theory of the thermal characteristics of various chip interconnect methods is available, but results are too generalized to be of much use for circuit design. This paper presents a theoretical consideration, but is primarily an experimental comparison of the thermal characteristics ( theta js , theta ja , P max ) of solder-bump flip-chip and chip-and-wire attachment techniques under comparable conditions. The 2N2222A transistor electrical specification in flip-chip and in chip form (MMCF2222A and MMCS2222A, respectively) was chosen for the comparison. Substrates were prepared to offer a thermally fair representation of actual usage in the manufacture of hybrid circuits. The effect of conformally coating and directly heat-sinking chips through a substrate is also evaluated. Thermal resistance data from a previous experiment for flip chips, standard chips, and beam leads is offered for com- parison.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"441 1-2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116582078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Thermal Design of an LSI Single-Chip Package","authors":"G. Ellison","doi":"10.1109/TPHP.1976.1135155","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135155","url":null,"abstract":"Theoretical and experimental methods are used to predict the thermal properties of an air-cooled integrated-circuit package with a large LSl type of chip. A previously reported three-dimensional solution to the differential equation for steady-state heat transfer has been extended to include composite media with up to four layers of unequal thickness and thermal conductivity. The theoretical results are used to calculate the detailed thermal characteristics of a 1.3 X 0.6-in package with a 0.17-in square chip. Geometric and physical considerations include the effects of ceramic thickness and thermal conductivity, chip dimensions, lead conduction, and heat-sink variations. An empirical technique is used to determine the forced-convection heat-transfer coefficients for a variety of extruded aluminum heat sinks. The effects of fin length, air velocity, and number of fins per inch are measured.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"383 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115948971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Heat Treatment of Dc-Sputtered Tin Dioxide Thin Films","authors":"A. Sabnis, L. Feisel","doi":"10.1109/TPHP.1976.1135153","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135153","url":null,"abstract":"Tin dioxide thin films were deposited by dc glow discharge sputtering using a compressed powder target. The conductivity of these films varied from 3 X 10-5 Omega -1cm-1for pure SnO 2 to 1 Omega -1cm-1for SnO 2 which was doped by adding 9 percent Sb 2 O 3 to the target. Transparency was above 85 percent. Films sputtered from targets containing more than 10 percent Sb 2 O 3 were highly resistive as a result of lattice disorder. Such films, however, became conductive upon post-deposition heat treatment. This paper presents the results of the heat treatment of these antimony-doped tin dioxide films. The variation of resistivity with temperature was found to be very complex. It not only depends on the previous heat-treatment history but also on the ambient sputter gas used during deposition. Heating beyond 400°C resulted in a general decrease in the conductivity of SnO 2 films. Below this temperature, successive heating and cooling in nitrogen caused increased conductivity and improved stability.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129358913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-Voltage Damage and Low-Frequency Noise in Thick-Film Resistors","authors":"E. Stevens, D. Gilbert, J. Ringo","doi":"10.1109/TPHP.1976.1135152","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135152","url":null,"abstract":"The results from a unified study of high-voltage damage and low-frequency noise in thick-film resistors are presented. Material microstructure and the mechanisms for charge transport and I/f noise are discussed to provide a basis for the interpretation of the experimental results. Experimental results showing a definite relationship between high-voltage damage and low-frequency noise are presented and interpreted. It is shown that noise parameters are extremely sensitive to the condition of interfacial regions within the conductive phase of the thick-film material. Because of this sensitivity to conductive-phase microstructure, noise measurements are recommended as a diagnostic tool for research on thick-film materials and as a diagnostic tool for quality-assurance efforts in the production environment.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126527074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Failure Modes of Beam-Lead Semiconductors in Thin-Film Hybrid Microcircuits","authors":"J. Swafford","doi":"10.1109/TPHP.1976.1135160","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135160","url":null,"abstract":"Beam-lead semiconductor and passive devices have been utilized in hybrid microcircuits (HMC) to provide higher reliability. This is derived from the beam-lead device's improved bonding integrity plus the silicon nitride coating which reduces sensitivity to contaminants; however, their size requires special handling techniques to prevent handling damage. Other failure modes exist such as cracked nitride, pinholes in the nitride, inadequate plating, and smeared metallization. After two years of production usage totaling approximately 150 000 devices, The Bendix Corporation's Kansas City Division has compiled significant data on beam-lead devices including small-signal and power discrete semiconductors and digital integrated circuits. These failure modes are characterized and precautionary measures are described to minimize failures in HMC usage.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130650611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On the Interpretation of Noise in Thick-Film Resistors","authors":"J. Ringo, E. Stevens, D. Gilbert","doi":"10.1109/TPHP.1976.1135147","DOIUrl":"https://doi.org/10.1109/TPHP.1976.1135147","url":null,"abstract":"Noise in thick-film resistors is interpreted by comparison to experimental and theoretical results previously reported for noise in metals and semiconductors. This comparison provides an explanation for the observed dependence of noise on the thick-film-resistor geometry and the 100-fold increase-in noise amplitude over that of metals and semiconductors This comparison indicates that mobile-charge interactions with traps are an inherent feature of charge transport in thick-film resistors.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132219474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}