厚膜电阻器的高压损伤与低频噪声

E. Stevens, D. Gilbert, J. Ringo
{"title":"厚膜电阻器的高压损伤与低频噪声","authors":"E. Stevens, D. Gilbert, J. Ringo","doi":"10.1109/TPHP.1976.1135152","DOIUrl":null,"url":null,"abstract":"The results from a unified study of high-voltage damage and low-frequency noise in thick-film resistors are presented. Material microstructure and the mechanisms for charge transport and I/f noise are discussed to provide a basis for the interpretation of the experimental results. Experimental results showing a definite relationship between high-voltage damage and low-frequency noise are presented and interpreted. It is shown that noise parameters are extremely sensitive to the condition of interfacial regions within the conductive phase of the thick-film material. Because of this sensitivity to conductive-phase microstructure, noise measurements are recommended as a diagnostic tool for research on thick-film materials and as a diagnostic tool for quality-assurance efforts in the production environment.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"High-Voltage Damage and Low-Frequency Noise in Thick-Film Resistors\",\"authors\":\"E. Stevens, D. Gilbert, J. Ringo\",\"doi\":\"10.1109/TPHP.1976.1135152\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results from a unified study of high-voltage damage and low-frequency noise in thick-film resistors are presented. Material microstructure and the mechanisms for charge transport and I/f noise are discussed to provide a basis for the interpretation of the experimental results. Experimental results showing a definite relationship between high-voltage damage and low-frequency noise are presented and interpreted. It is shown that noise parameters are extremely sensitive to the condition of interfacial regions within the conductive phase of the thick-film material. Because of this sensitivity to conductive-phase microstructure, noise measurements are recommended as a diagnostic tool for research on thick-film materials and as a diagnostic tool for quality-assurance efforts in the production environment.\",\"PeriodicalId\":387212,\"journal\":{\"name\":\"IEEE Transactions on Parts, Hybrids, and Packaging\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Parts, Hybrids, and Packaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TPHP.1976.1135152\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Parts, Hybrids, and Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TPHP.1976.1135152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26

摘要

本文对厚膜电阻器的高压损伤和低频噪声进行了统一的研究。讨论了材料的微观结构以及电荷输运和I/f噪声的机理,为实验结果的解释提供了依据。实验结果表明,高压损伤与低频噪声之间存在一定的关系。结果表明,噪声参数对厚膜材料导电相中界面区域的状况极为敏感。由于对导电相微观结构的这种敏感性,噪声测量被推荐作为厚膜材料研究的诊断工具,并作为生产环境中质量保证工作的诊断工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Voltage Damage and Low-Frequency Noise in Thick-Film Resistors
The results from a unified study of high-voltage damage and low-frequency noise in thick-film resistors are presented. Material microstructure and the mechanisms for charge transport and I/f noise are discussed to provide a basis for the interpretation of the experimental results. Experimental results showing a definite relationship between high-voltage damage and low-frequency noise are presented and interpreted. It is shown that noise parameters are extremely sensitive to the condition of interfacial regions within the conductive phase of the thick-film material. Because of this sensitivity to conductive-phase microstructure, noise measurements are recommended as a diagnostic tool for research on thick-film materials and as a diagnostic tool for quality-assurance efforts in the production environment.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信