{"title":"厚膜电阻器噪声的解释","authors":"J. Ringo, E. Stevens, D. Gilbert","doi":"10.1109/TPHP.1976.1135147","DOIUrl":null,"url":null,"abstract":"Noise in thick-film resistors is interpreted by comparison to experimental and theoretical results previously reported for noise in metals and semiconductors. This comparison provides an explanation for the observed dependence of noise on the thick-film-resistor geometry and the 100-fold increase-in noise amplitude over that of metals and semiconductors This comparison indicates that mobile-charge interactions with traps are an inherent feature of charge transport in thick-film resistors.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"On the Interpretation of Noise in Thick-Film Resistors\",\"authors\":\"J. Ringo, E. Stevens, D. Gilbert\",\"doi\":\"10.1109/TPHP.1976.1135147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Noise in thick-film resistors is interpreted by comparison to experimental and theoretical results previously reported for noise in metals and semiconductors. This comparison provides an explanation for the observed dependence of noise on the thick-film-resistor geometry and the 100-fold increase-in noise amplitude over that of metals and semiconductors This comparison indicates that mobile-charge interactions with traps are an inherent feature of charge transport in thick-film resistors.\",\"PeriodicalId\":387212,\"journal\":{\"name\":\"IEEE Transactions on Parts, Hybrids, and Packaging\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Parts, Hybrids, and Packaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TPHP.1976.1135147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Parts, Hybrids, and Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TPHP.1976.1135147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the Interpretation of Noise in Thick-Film Resistors
Noise in thick-film resistors is interpreted by comparison to experimental and theoretical results previously reported for noise in metals and semiconductors. This comparison provides an explanation for the observed dependence of noise on the thick-film-resistor geometry and the 100-fold increase-in noise amplitude over that of metals and semiconductors This comparison indicates that mobile-charge interactions with traps are an inherent feature of charge transport in thick-film resistors.
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