Electron-Beam-Induced Currents in Simple Device Structures

Abstract

Electron-beam-induced current (EBIC) in semiconductor devices produced by the electron beam of a scanning electron microscope (SEM) can be used to image sub-surface device features and to measure certain material parameters, This paper presents a simple method of calculation for estimating the magnitude of EBIC signals. EBIC signals from silicon p-n junction diodes are compared with the results of the calculation, The application of EBIC to more complicated device structures is discussed.