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2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献

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Characterization of Dielectric Breakdown and Lifetime Analysis for Silicon Nitride Metal-Insulator-Metal Capacitors under Electrostatic Discharge Stresses 静电放电应力下氮化硅金属-绝缘子-金属电容器的介电击穿特性及寿命分析
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452538
Hang Li, Hobie Yun, Wei Liang, Aihua Dong, M. Miao, K. Sundaram
{"title":"Characterization of Dielectric Breakdown and Lifetime Analysis for Silicon Nitride Metal-Insulator-Metal Capacitors under Electrostatic Discharge Stresses","authors":"Hang Li, Hobie Yun, Wei Liang, Aihua Dong, M. Miao, K. Sundaram","doi":"10.1109/IPFA.2018.8452538","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452538","url":null,"abstract":"Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN integrated circuits and integrated passive devices (IPD). To analyze the dielectric breakdown mechanisms and predict the lifetime of SiN MIMCAPs under electrostatic discharge (ESD) conditions, characteristics of MIMCAPs with different dimensions (dielectric thickness and area) and various ambient temperatures under ESD stresses are investigated. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) system and the Signatone S1060 heating module. Then, the breakdown voltage variation of MIMCAPs with respect to dimensions and temperatures under different types of transmission line pulsing (TLP) stresses is discussed. Furthermore, with the transformative version of power law employed, the lifetime (time dependent dielectric breakdown, TDDB) of MIMCAPs is analyzed.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"408 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133634221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Silicon Crack Root Cause Identification in a Wafer Level Chip Scale Package 晶圆级芯片规模封装中硅裂纹的根本原因识别
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452606
Mary Grace C. Raborar, Jae Saladar, R. Mendaros
{"title":"Silicon Crack Root Cause Identification in a Wafer Level Chip Scale Package","authors":"Mary Grace C. Raborar, Jae Saladar, R. Mendaros","doi":"10.1109/IPFA.2018.8452606","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452606","url":null,"abstract":"A different kind of challenge was encountered during the failure analysis (FA) of several customer-returned power devices. Determination of the failure mechanism (FM), silicon cratering or cracking, was straightforward; however, root cause process ownership identification was challenging. This paper presents the laborious analyses to identify the process that induced the failure.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115047676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantitative Evaluation of Carrier Distribution in Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy 用扫描非线性介电显微镜定量评价硅太阳电池中的载流子分布
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452172
Kotaro Hirose, K. Tanahashi, H. Takato, Yasuo Cho
{"title":"Quantitative Evaluation of Carrier Distribution in Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy","authors":"Kotaro Hirose, K. Tanahashi, H. Takato, Yasuo Cho","doi":"10.1109/IPFA.2018.8452172","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452172","url":null,"abstract":"The carrier distribution in solar cell is important evaluation target. Scanning nonlinear dielectric microscopy is applied to the cross section of phosphorus implanted emitter in monocrystalline silicon solar cell and visualizes the carrier distribution quantitatively. The effective diffusivities of phosphorus are estimated from the experimental results. Then, the three-dimensional carrier distribution is simulated. The experimental and simulation results show good correlation.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128410428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectral Gated Imaging of Dynamic Photon Emission in Mixed-Signal and Power Devices 混合信号和功率器件中动态光子发射的光谱门控成像
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452170
Zhongling Qian, C. Brillert
{"title":"Spectral Gated Imaging of Dynamic Photon Emission in Mixed-Signal and Power Devices","authors":"Zhongling Qian, C. Brillert","doi":"10.1109/IPFA.2018.8452170","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452170","url":null,"abstract":"In this paper, the spectral analysis capability combined with the gated imaging technique of dynamic photon emission (GI-PEM) is economically realized. It is introduced as a powerful localization tool by combining a low-cost near-infrared InGaAs image intensifier (I.I.) and a transmission blazed grating. At first, the setup and method for spectral gated imaging of photon emission microscope (SGI-PEM) are presented. On one hand, with GI-PEM as one of global localization tools, it shows an unique and economical debugging and pinpointing capabilities to dynamic fails in mixed-signal and power devices, such as current/voltage spikes, power-up, ESD and latch-up problems. On the other hand, with its spectral capability it can also get insight into the evolution of the physical mechanism of dynamic photon emission in a short time. With detailed dynamical spectra study of the stress process in mixed-signal and power MOSFETs, the corresponding design physical parameters can be optimized to improve their performance.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130033269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of EOFM to Localize the Metal and Poly-Si Short EOFM在金属和多晶硅短板定位中的应用
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452533
Anusorn Khuankaew
{"title":"Application of EOFM to Localize the Metal and Poly-Si Short","authors":"Anusorn Khuankaew","doi":"10.1109/IPFA.2018.8452533","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452533","url":null,"abstract":"Electro Optical Frequency Mapping is a well-known dynamic fault isolation techniques which is capable of mapping and extracting information of switching transistors from the active area. However, this paper will present a case study of the capability of EOFM to detect the fault location at non-active area (Metal and Polysilicon line). The paper will describe how EOFM can help to localize the Metal and Polysilicon short. Content in this paper provides a useful information and a methodology to localize a short defect in non-active area which relates with thermo-reflectance effects.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130812268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect Prediction Approach to enhance Static Fault Localization of Functional Logic Failure Defects using NIR Photon Emission Microscopy 基于近红外光子发射显微镜的功能逻辑失效缺陷静态故障定位预测方法
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452572
D. Nagalingam, A. Quah, S. Moon, G. Ang, S. L. Ting, H.H. Ma, S. Neo, Z. Mai, J. Lam
{"title":"Defect Prediction Approach to enhance Static Fault Localization of Functional Logic Failure Defects using NIR Photon Emission Microscopy","authors":"D. Nagalingam, A. Quah, S. Moon, G. Ang, S. L. Ting, H.H. Ma, S. Neo, Z. Mai, J. Lam","doi":"10.1109/IPFA.2018.8452572","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452572","url":null,"abstract":"Studies on defect induced emission characteristics have significantly enhanced the effectiveness of static fault localization on functional logic failures due to open and short defects. In this paper, using the distinctive differences in the defect-induced emission characteristic between open and short defects, together with layout trace and analysis, a defect prediction approach has been derived. It assisted in the hypothesis of the defect type, narrowing down the defect location within long failure net(s) and even pin-pointing the exact defect location in some cases. Successful case studies on advanced technology node devices were used to describe four different emission signatures of open and short defects and the effective application of aforementioned approach in isolating the defect.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130989401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Using Liquid Electrolytes in Dielectric Reliability Studies 液体电解质在介质可靠性研究中的应用
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452552
M. Lanza, F. Hui, Yuanyuan Shi, Tingting Han, K. Tang, A. Meng, P. McIntyre, T. Petach, D. Goldhaber-Gordon, C. Hitzman, A. Koh
{"title":"Using Liquid Electrolytes in Dielectric Reliability Studies","authors":"M. Lanza, F. Hui, Yuanyuan Shi, Tingting Han, K. Tang, A. Meng, P. McIntyre, T. Petach, D. Goldhaber-Gordon, C. Hitzman, A. Koh","doi":"10.1109/IPFA.2018.8452552","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452552","url":null,"abstract":"In reliability studies, thin dielectric films are normally placed between two solid electrodes and a potential difference is applied, which produces local physical changes in the dielectric. However, studying such features is very complex due to the need of etching one of the solid electrodes. Here we show that liquid electrolytes can be used to study the reliability of thin dielectrics. Their main advantage is that after the electrical stress, the liquid can be rinsed, exposing the surface for direct characterization.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126825586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Descrambling of Embedded SRAM Using a Laser Probe 用激光探针对嵌入式SRAM进行解扰
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452604
S. Chef, C. T. Chua, J. Tay, Y. W. Siah, S. Bhasin, J. Breier, C. Gan
{"title":"Descrambling of Embedded SRAM Using a Laser Probe","authors":"S. Chef, C. T. Chua, J. Tay, Y. W. Siah, S. Bhasin, J. Breier, C. Gan","doi":"10.1109/IPFA.2018.8452604","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452604","url":null,"abstract":"Understanding the organization of memory is a mandatory first step in various fields of applications such as failure analysis, defect localization, qualification and testing of space electronics, and security evaluation. For the last category, localization of specific addresses may be used for content estimation or encryption key recovery, with several techniques being reported for this task. In this paper, we discuss the application of laser probing for descrambling memory embedded in 8 bits microcontrollers designed and manufactured by different companies in various technology nodes.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116616642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
STEM/EDS Metrology and Statistical Analysis of 3D NAND Devices 3D NAND器件的STEM/EDS计量与统计分析
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452545
Ashley Tilson, M. Strauss
{"title":"STEM/EDS Metrology and Statistical Analysis of 3D NAND Devices","authors":"Ashley Tilson, M. Strauss","doi":"10.1109/IPFA.2018.8452545","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452545","url":null,"abstract":"Process monitoring of 3D NAND flash memory devices requires critical dimension analysis at multiple heights in the memory cell channel. In the punch and plug process the etching step of the cell channel is vulnerable to deformities especially as the aspect ratio of the channel increases. Automated STEM metrology is used as a fast and accurate method of analysis to determine the channel area, circularity, and position. EDS metrology provides the dielectric layer widths of the cell, compensating for the low contrast of these layers in standard STEM imaging. Automation of the STEM image acquisition, EDS, and metrology enabled large data sets to be acquired for analysis. The results of the analysis reveal how the channel shrinks and morphs as the depth of the channel increases.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121687631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
FBGA 28nm Scan Chain Failure Analysis FBGA 28nm扫描链失效分析
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI: 10.1109/IPFA.2018.8452562
Liew Chiun Ning, L. K. Heng, Ng Yi Jie, Goh Lay Lay, Lee Chong Haw, Loo Huey Wen
{"title":"FBGA 28nm Scan Chain Failure Analysis","authors":"Liew Chiun Ning, L. K. Heng, Ng Yi Jie, Goh Lay Lay, Lee Chong Haw, Loo Huey Wen","doi":"10.1109/IPFA.2018.8452562","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452562","url":null,"abstract":"Ongoing miniaturization in process node technology used in fabricating integrated circuits (ICs) has enhanced chip performance but at the same time this has induced subtle defects. As a result, Failure Analysis (FA) has become increasingly important for root cause analysis to enable wafer fab process improvement. This paper presents a novel FA approach on real case Scan Chain functional failure induced in fabrication process by incorporating Focused Ion Beam (FIB) circuit edit, Infrared Emission Microscopy (IREM), extensive layout study, Nanoprobing, Electron Beam Absorbed Current (EBAC), Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray (EDX) for defect localization.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132905068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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