静电放电应力下氮化硅金属-绝缘子-金属电容器的介电击穿特性及寿命分析

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452538

Hang Li, Hobie Yun, Wei Liang, Aihua Dong, M. Miao, K. Sundaram

{"title":"静电放电应力下氮化硅金属-绝缘子-金属电容器的介电击穿特性及寿命分析","authors":"Hang Li, Hobie Yun, Wei Liang, Aihua Dong, M. Miao, K. Sundaram","doi":"10.1109/IPFA.2018.8452538","DOIUrl":null,"url":null,"abstract":"Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN integrated circuits and integrated passive devices (IPD). To analyze the dielectric breakdown mechanisms and predict the lifetime of SiN MIMCAPs under electrostatic discharge (ESD) conditions, characteristics of MIMCAPs with different dimensions (dielectric thickness and area) and various ambient temperatures under ESD stresses are investigated. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) system and the Signatone S1060 heating module. Then, the breakdown voltage variation of MIMCAPs with respect to dimensions and temperatures under different types of transmission line pulsing (TLP) stresses is discussed. Furthermore, with the transformative version of power law employed, the lifetime (time dependent dielectric breakdown, TDDB) of MIMCAPs is analyzed.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"408 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Characterization of Dielectric Breakdown and Lifetime Analysis for Silicon Nitride Metal-Insulator-Metal Capacitors under Electrostatic Discharge Stresses\",\"authors\":\"Hang Li, Hobie Yun, Wei Liang, Aihua Dong, M. Miao, K. Sundaram\",\"doi\":\"10.1109/IPFA.2018.8452538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN integrated circuits and integrated passive devices (IPD). To analyze the dielectric breakdown mechanisms and predict the lifetime of SiN MIMCAPs under electrostatic discharge (ESD) conditions, characteristics of MIMCAPs with different dimensions (dielectric thickness and area) and various ambient temperatures under ESD stresses are investigated. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) system and the Signatone S1060 heating module. Then, the breakdown voltage variation of MIMCAPs with respect to dimensions and temperatures under different types of transmission line pulsing (TLP) stresses is discussed. Furthermore, with the transformative version of power law employed, the lifetime (time dependent dielectric breakdown, TDDB) of MIMCAPs is analyzed.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"408 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

氮化硅(SiN)金属-绝缘体-金属电容器(MIMCAPs)是大多数GaAs和GaN集成电路和集成无源器件(IPD)的组成部分。为了分析静电放电(ESD)条件下的介质击穿机理并预测其寿命，研究了不同尺寸(介质厚度和面积)和不同环境温度下的静电放电(ESD)应力下mimcap的特性。测量使用Barth 4002传输线脉冲(TLP)系统和Signatone S1060加热模块进行。然后，讨论了在不同类型的传输线脉冲(TLP)应力下，mimcap的击穿电压随尺寸和温度的变化。此外，利用幂律的变换版本，分析了mimcap的寿命(随时间变化的介电击穿，TDDB)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characterization of Dielectric Breakdown and Lifetime Analysis for Silicon Nitride Metal-Insulator-Metal Capacitors under Electrostatic Discharge Stresses

Silicon nitride (SiN) metal-insulator-metal capacitors (MIMCAPs) are components of most GaAs and GaN integrated circuits and integrated passive devices (IPD). To analyze the dielectric breakdown mechanisms and predict the lifetime of SiN MIMCAPs under electrostatic discharge (ESD) conditions, characteristics of MIMCAPs with different dimensions (dielectric thickness and area) and various ambient temperatures under ESD stresses are investigated. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) system and the Signatone S1060 heating module. Then, the breakdown voltage variation of MIMCAPs with respect to dimensions and temperatures under different types of transmission line pulsing (TLP) stresses is discussed. Furthermore, with the transformative version of power law employed, the lifetime (time dependent dielectric breakdown, TDDB) of MIMCAPs is analyzed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

自引率

0.00%

发文量