Defect Prediction Approach to enhance Static Fault Localization of Functional Logic Failure Defects using NIR Photon Emission Microscopy

D. Nagalingam, A. Quah, S. Moon, G. Ang, S. L. Ting, H.H. Ma, S. Neo, Z. Mai, J. Lam
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引用次数: 4

Abstract

Studies on defect induced emission characteristics have significantly enhanced the effectiveness of static fault localization on functional logic failures due to open and short defects. In this paper, using the distinctive differences in the defect-induced emission characteristic between open and short defects, together with layout trace and analysis, a defect prediction approach has been derived. It assisted in the hypothesis of the defect type, narrowing down the defect location within long failure net(s) and even pin-pointing the exact defect location in some cases. Successful case studies on advanced technology node devices were used to describe four different emission signatures of open and short defects and the effective application of aforementioned approach in isolating the defect.
基于近红外光子发射显微镜的功能逻辑失效缺陷静态故障定位预测方法
缺陷诱发发射特性的研究大大提高了静态故障定位对开路缺陷和短缺陷导致的功能逻辑故障的有效性。本文利用开放缺陷和短缺陷在缺陷致发射特性上的显著差异,结合布局跟踪和分析,推导了缺陷预测方法。它有助于缺陷类型的假设,在长故障网中缩小缺陷位置,甚至在某些情况下精确定位缺陷位置。利用先进技术节点器件的成功案例,描述了四种不同的开放缺陷和短缺陷发射特征,以及上述方法在缺陷隔离中的有效应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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